IRG7PSH50UDPBF Equivalent & Substitute Parts

Part Overview

The IRG7PSH50UDPBF is a Trench IGBT manufactured by Infineon Technologies, rated for 1200V collector-emitter breakdown voltage and 116A maximum collector current. This device is designed for high-power switching applications requiring through-hole mounting in the TO-274AA package format.

The IRG7PSH50UDPBF carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRG7PSH50UDPBF

Infineon TechnologiesIn Stock: 1030IRG7PSH50UDPBF Datasheet

Current PartRFQ

IKW40N120H3FKSA1

Infineon TechnologiesIn Stock: 300333IKW40N120H3FKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRG7PSH50UDPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating: Both the main part and substitute must maintain 1200V collector-emitter breakdown voltage to ensure safe operation in the target application circuit.

Current Rating: The substitute must support the required collector current. The IRG7PSH50UDPBF specifies 116A maximum continuous current. Substitutes with equal or higher current ratings are acceptable.

IGBT Technology: The main part uses Trench technology. Substitutes may employ advanced Trench variants (such as Trench Field Stop) provided voltage and current specifications remain compatible.

Mounting and Package: The main part uses through-hole mounting. Substitutes must also use through-hole mounting to maintain PCB compatibility, though the specific package form factor may differ (TO-274AA versus TO-247-3).

Thermal and Switching Characteristics: Operating temperature range, gate charge, switching times, and reverse recovery time are secondary parameters that influence performance but do not prevent substitution when primary electrical ratings are met.

Compliance and Status: Active product status and current compliance certifications (RoHS, REACH) are preferred for new designs and ongoing supply assurance.

Parameter Comparison

Engineering Selection Recommendations

IKW40N120H3FKSA1 as Primary Substitute:

The IKW40N120H3FKSA1 is the manufacturer-recommended substitute for the IRG7PSH50UDPBF. Both devices share identical 1200V voltage ratings and are manufactured by Infineon Technologies. The substitute employs Trench Field Stop technology, an advanced variant of Trench IGBT architecture that provides improved switching performance characteristics.

Voltage Compatibility: Both parts maintain 1200V collector-emitter breakdown voltage, ensuring direct electrical compatibility in 1200V-rated circuit topologies.

Current Derating Consideration: The IKW40N120H3FKSA1 specifies 80A maximum continuous collector current, compared to 116A for the IRG7PSH50UDPBF. Applications requiring continuous current above 80A must evaluate whether the substitute's rating is sufficient for the intended load profile.

Switching Performance: The substitute exhibits faster switching times (30ns on-time versus 35ns; 290ns off-time versus 430ns) and lower gate charge (185nC versus 440nC), resulting in reduced switching losses and improved efficiency in high-frequency applications.

Thermal Operating Range: The IKW40N120H3FKSA1 supports -40°C to 175°C junction temperature, compared to -55°C to 150°C for the main part. Applications requiring operation below -40°C must retain the original part or identify alternative solutions.

Product Status and Compliance: The IKW40N120H3FKSA1 carries Active product status and ROHS3 compliance certification, ensuring long-term availability and regulatory alignment for new production and design updates.

Package Transition: The substitute uses TO-247-3 through-hole packaging instead of TO-274AA. PCB layout modifications are required to accommodate the different pin configuration and mechanical footprint.

Frequently Asked Questions (FAQ)

Q: Can the IKW40N120H3FKSA1 directly replace the IRG7PSH50UDPBF without circuit modifications?

A: Electrical substitution is possible due to matching 1200V voltage ratings and through-hole mounting. However, the lower continuous current rating (80A versus 116A) and different package form factor (TO-247-3 versus TO-274AA) require evaluation of application current requirements and PCB layout redesign.

Q: What is the significance of the current rating difference between the two parts?

A: The IRG7PSH50UDPBF supports 116A continuous collector current, while the IKW40N120H3FKSA1 supports 80A. Applications operating at continuous currents between 80A and 116A cannot use the substitute without thermal derating or circuit redesign. Pulsed current ratings (150A versus 160A) are comparable.

Q: Does the Trench Field Stop technology in the substitute affect compatibility?

A: Trench Field Stop is an advanced variant of Trench IGBT technology that improves switching performance and reduces losses. It does not prevent substitution; rather, it provides enhanced electrical characteristics. The substitute exhibits faster switching times and lower gate charge, which may improve overall circuit efficiency.

Q: Why is the operating temperature range different?

A: The IRG7PSH50UDPBF operates from -55°C to 150°C junction temperature, while the IKW40N120H3FKSA1 operates from -40°C to 175°C. Applications requiring operation below -40°C must use the original part or identify alternative solutions. The substitute supports higher maximum junction temperature, beneficial for high-power applications.

Q: What PCB modifications are required due to package differences?

A: The IRG7PSH50UDPBF uses TO-274AA packaging, while the IKW40N120H3FKSA1 uses TO-247-3. These packages have different pin configurations, mechanical dimensions, and mounting hole patterns. PCB footprint redesign is mandatory to accommodate the substitute package.

Q: Are both parts compliant with current regulatory standards?

A: The IKW40N120H3FKSA1 is ROHS3 compliant and carries Active product status, ensuring regulatory alignment and long-term supply availability. The IRG7PSH50UDPBF is Obsolete with unspecified RoHS status. For new designs and ongoing production, the substitute is preferred from a compliance and availability perspective.

Q: What is the impact of lower gate charge in the substitute?

A: The IKW40N120H3FKSA1 has gate charge of 185nC compared to 440nC for the IRG7PSH50UDPBF. Lower gate charge reduces the energy required to switch the device and decreases switching losses, improving circuit efficiency and reducing thermal stress on the gate driver circuit.