IRG7PH35UD-EP IGBT Equivalent & Substitute Parts

Part Overview

The IRG7PH35UD-EP is a Trench IGBT manufactured by Infineon Technologies, rated for 1200V collector-emitter breakdown voltage and 50A continuous collector current. This device is designed for Through Hole mounting in the TO-247-3 package and is classified as Obsolete product status. Due to its obsolete classification, identification of functionally equivalent substitute components is necessary for ongoing system support, maintenance, and new design considerations where legacy compatibility is not required.

Substiute Parts

IRG7PH35UD-EP

Infineon TechnologiesIn Stock: 19144IRG7PH35UD-EP Datasheet

Current PartRFQ

IKW25N120T2FKSA1

Infineon TechnologiesIn Stock: 1628IKW25N120T2FKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRG7PH35UD-EP is determined by strict alignment of the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A minimum
• IGBT Type: Trench technology
• Package / Case: TO-247-3
• Mounting Type: Through Hole

Allowable Parameter Variations: Substitute parts may exceed the main part specifications in the following parameters without compromising functional compatibility:

• Current - Collector Pulsed (Icm): May be higher
• Power - Max: May be higher
• Gate Charge: May be higher
• Switching Energy: May be higher
• Operating Temperature Range: May be wider
• Reverse Recovery Time (trr): May be higher

The substitute part IKW25N120T2FKSA1 meets all mandatory matching criteria while providing enhanced performance characteristics in pulsed current capability (100A vs 60A), maximum power dissipation (349W vs 180W), and operating temperature range (-40°C to 175°C vs -55°C to 150°C).

Parameter Comparison

Engineering Selection Recommendations

For Existing System Maintenance: The IKW25N120T2FKSA1 is suitable for direct replacement in applications currently using the IRG7PH35UD-EP. Both devices share identical voltage and current ratings, package form factor, and mounting configuration. The substitute part maintains ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original component.

For New Design Considerations: Both the IRG7PH35UD-EP (Obsolete) and IKW25N120T2FKSA1 (Not For New Designs) carry restricted product status classifications. New designs should evaluate alternative 1200V, 50A Trench IGBT solutions with active product status to ensure long-term supply chain viability and manufacturer support.

Performance Trade-offs: The IKW25N120T2FKSA1 exhibits higher gate charge (120nC vs 85nC) and increased switching energy, which may result in higher gate drive power requirements and thermal dissipation. Applications with stringent power efficiency requirements should evaluate these differences against system thermal management capabilities.

Frequently Asked Questions (FAQ)

Q: Can the IKW25N120T2FKSA1 be used as a direct replacement for the IRG7PH35UD-EP?

A: Yes. Both devices are 1200V, 50A Trench IGBTs in TO-247-3 Through Hole packages manufactured by Infineon Technologies. Electrical ratings and mechanical compatibility are equivalent. The substitute part provides enhanced performance in pulsed current capability and maximum power dissipation.

Q: What are the key differences between these two parts?

A: The primary differences are gate charge (120nC vs 85nC), switching energy (2.9mJ vs 1.06mJ on-state), and reverse recovery time (195ns vs 105ns). The IKW25N120T2FKSA1 also supports a wider operating temperature range (-40°C to 175°C vs -55°C to 150°C). These differences reflect different design optimization approaches but do not affect functional compatibility in applications designed for the original part.

Q: Are there any compliance or certification differences?

A: Both parts are ROHS3 compliant and REACH unaffected. No compliance differences exist between the two devices.

Q: What is the significance of the product status classifications?

A: IRG7PH35UD-EP is classified as Obsolete, indicating it is no longer manufactured or supported by Infineon. IKW25N120T2FKSA1 is classified as Not For New Designs, indicating limited availability and manufacturer support. For new applications, alternative active-status components should be evaluated.

Q: Does the higher gate charge of the substitute part affect circuit design?

A: Gate charge affects gate drive circuit requirements. The IKW25N120T2FKSA1 requires 120nC versus 85nC for the original part. Existing gate drive circuits designed for the IRG7PH35UD-EP must be verified to supply adequate gate current for the substitute part. Insufficient gate drive may result in slower switching transitions and increased power dissipation.

Q: Are the packages physically identical?

A: Yes. Both devices use the TO-247-3 Through Hole package. Pin configuration, lead spacing, and mounting hole locations are identical, allowing direct mechanical substitution on existing PCBs.