IRG6IC30UPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRG6IC30UPBF is a Trench IGBT manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage and 25A collector current with 37W maximum power dissipation. This device is packaged in TO-220AB Full-Pak configuration for through-hole mounting applications. The part is currently listed as obsolete, necessitating identification of functionally equivalent active alternatives from other manufacturers to maintain design continuity and ensure supply chain availability.

Substiute Parts

IRG6IC30UPBF
Infineon TechnologiesIn Stock: 12388IRG6IC30UPBF Datasheet
IRG6IC30UPBF
Current Part
RJH60D2DPP-M0#T2
Renesas Electronics CorporationIn Stock: 4781RJH60D2DPP-M0#T2 Datasheet
RJH60D2DPP-M0#T2
MFR Recommended
RJH60M2DPP-M0#T2
Renesas Electronics CorporationIn Stock: 1134RJH60M2DPP-M0#T2 Datasheet
RJH60M2DPP-M0#T2
MFR Recommended

Key Parameters

Parameter Value Unit
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 25 A
Power - Max 37 W
Vce(on) (Max) 2.88 V @ 15V, 120A
Gate Charge 79 nC
Td (on/off) @ 25°C 20/160 ns
Operating Temperature Range -40 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Input Type Standard
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRG6IC30UPBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • IGBT Type: Trench
  • Input Type: Standard
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack

Allowable Variation Parameters:

  • Power - Max: Substitute must not exceed the thermal design requirements of the application; values between 27.2W and 37W are within acceptable range for equivalent thermal management
  • Vce(on) (Max): Substitute values between 2.2V and 2.88V are acceptable; lower values indicate improved efficiency
  • Gate Charge: Substitute values between 19nC and 79nC are acceptable; lower values indicate faster switching
  • Td (on/off): Substitute values with faster switching times are acceptable; values between 20ns/160ns and 32ns/85ns represent acceptable performance ranges

The identified substitute parts RJH60D2DPP-M0#T2 and RJH60M2DPP-M0#T2 from Renesas Electronics Corporation meet all mandatory matching parameters and fall within allowable variation ranges for electrical performance characteristics.

Parameter Comparison

Parameter IRG6IC30UPBF (Infineon) RJH60D2DPP-M0#T2 (Renesas) RJH60M2DPP-M0#T2 (Renesas) Unit
IGBT Type Trench Trench Trench
Voltage - Collector Emitter Breakdown (Max) 600 600 600 V
Current - Collector (Ic) (Max) 25 25 25 A
Power - Max 37 34 33.8 W
Vce(on) (Max) 2.88 @ 15V, 120A 2.2 @ 15V, 12A 2.5 @ 15V, 12A V
Gate Charge 79 19 33 nC
Td (on/off) @ 25°C 20/160 32/85 32/70 ns
Input Type Standard Standard Standard
Operating Temperature Range -40 to 150 150 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Product Status Obsolete Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Affected

Engineering Selection Recommendations

Primary Substitute: RJH60D2DPP-M0#T2

The RJH60D2DPP-M0#T2 is the preferred substitute for the obsolete IRG6IC30UPBF. This Renesas device maintains electrical equivalence across all mandatory parameters: 600V breakdown voltage, 25A collector current, Trench IGBT architecture, Standard input type, and TO-220-3 Full Pack through-hole mounting. The device demonstrates improved switching performance with reduced gate charge (19nC versus 79nC) and faster turn-off time (85ns versus 160ns), resulting in lower switching losses. Power dissipation of 34W remains within acceptable thermal design margins. The part carries Active product status, ensuring long-term supply availability. REACH Unaffected status provides regulatory compliance equivalent to the original part.

Secondary Substitute: RJH60M2DPP-M0#T2

The RJH60M2DPP-M0#T2 serves as an alternative substitute, offering similar electrical equivalence with marginally higher gate charge (33nC) and power dissipation (33.8W) compared to the RJH60D2DPP-M0#T2. This device provides a middle-ground performance profile between the two Renesas options. Active product status ensures supply continuity. Note: REACH Affected status indicates this part is subject to REACH regulatory requirements and may require additional compliance documentation for certain applications or regions.

Selection Criteria:

  • For applications prioritizing switching efficiency and reduced gate drive requirements: Select RJH60D2DPP-M0#T2
  • For applications with less stringent switching speed requirements: Select RJH60M2DPP-M0#T2
  • For applications requiring REACH Unaffected compliance: Select RJH60D2DPP-M0#T2

Both substitutes are electrically and mechanically compatible with the IRG6IC30UPBF in TO-220-3 Full Pack through-hole applications without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can RJH60D2DPP-M0#T2 or RJH60M2DPP-M0#T2 be used as direct replacements for IRG6IC30UPBF without circuit modification?

A: Yes. Both Renesas devices are direct pin-compatible substitutes in TO-220-3 Full Pack through-hole mounting. Electrical parameters fall within acceptable equivalence ranges for 600V, 25A Trench IGBT applications. No circuit redesign is required.

Q: What is the significance of the lower gate charge in RJH60D2DPP-M0#T2?

A: Gate charge of 19nC (versus 79nC in the original part) indicates reduced gate drive energy requirements and faster switching transitions. This results in lower switching losses and improved overall circuit efficiency. Gate drive circuits designed for the original part will operate with improved performance margins.

Q: How do the switching time differences affect circuit performance?

A: The RJH60D2DPP-M0#T2 exhibits faster turn-off time (85ns versus 160ns), reducing switching losses and enabling higher switching frequencies. The RJH60M2DPP-M0#T2 provides intermediate switching performance. Both remain suitable for standard industrial switching applications. Specific frequency requirements should be evaluated against application specifications.

Q: What does REACH Affected status mean for RJH60M2DPP-M0#T2?

A: REACH Affected indicates the part contains substances subject to REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulations. This requires compliance documentation and may impose restrictions on use in certain applications or geographic regions. RJH60D2DPP-M0#T2 with REACH Unaffected status avoids these requirements.

Q: Are there thermal management differences between the substitute parts?

A: Power dissipation ratings are 34W (RJH60D2DPP-M0#T2) and 33.8W (RJH60M2DPP-M0#T2) versus 37W for the original part. Both substitutes operate within acceptable thermal margins for applications designed for the IRG6IC30UPBF. Existing heatsink and thermal management designs remain valid.

Q: What is the inventory status of these substitute parts?

A: RJH60D2DPP-M0#T2 has 4681 pieces in stock. RJH60M2DPP-M0#T2 has 1102 pieces in stock. Both are available as new original components from active product lines, ensuring supply continuity compared to the obsolete IRG6IC30UPBF.

Q: Are the operating temperature ranges equivalent?

A: The original IRG6IC30UPBF specifies -40°C to 150°C (TJ). The Renesas substitutes specify 150°C (TJ) maximum. For applications requiring operation below ambient temperatures or extended low-temperature performance, verify specific application requirements against the Renesas datasheet specifications.

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