IRG4PSC71UPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRG4PSC71UPBF is a 600V, 85A IGBT manufactured by Infineon Technologies in the SUPER-247™ (TO-274AA) package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The part delivers 350W maximum power dissipation with switching characteristics optimized for high-frequency applications requiring robust voltage and current handling.

Substiute Parts

IRG4PSC71UPBF
Infineon TechnologiesIn Stock: 2140IRG4PSC71UPBF Datasheet
IRG4PSC71UPBF
Current Part
IGW50N65H5FKSA1
Infineon TechnologiesIn Stock: 1172IGW50N65H5FKSA1 Datasheet
IGW50N65H5FKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 85 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A V
Power - Max 350 W
Gate Charge 340 nC
Td (on/off) @ 25°C 34ns/56ns ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-274AA (SUPER-247™)
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IRG4PSC71UPBF is determined by the following electrical and mechanical criteria:

Voltage Rating: The substitute must support minimum 600V collector-emitter breakdown voltage. The IGW50N65H5FKSA1 provides 650V, exceeding the original specification and ensuring compatibility in 600V applications.

Current Rating: The substitute must accommodate minimum 85A continuous collector current. The IGW50N65H5FKSA1 provides 80A, which is below the original 85A specification. This represents a current derating and requires circuit-level evaluation for applications demanding the full 85A capacity.

Package and Mounting: Both parts utilize through-hole mounting. The original uses SUPER-247™ (TO-274AA) while the substitute uses PG-TO247-3. These packages are mechanically distinct and require PCB redesign for physical compatibility.

Power Dissipation: The original dissipates 350W maximum; the substitute dissipates 305W. This represents a 12.9% reduction in thermal capacity.

Switching Characteristics: Gate charge, switching delays, and energy parameters differ between parts, affecting circuit performance in high-frequency switching applications.

Parameter Comparison

Parameter IRG4PSC71UPBF (Original) IGW50N65H5FKSA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors, IGBTs Transistors, IGBTs
Voltage - Collector Emitter Breakdown (Max) 600 650 V
Current - Collector (Ic) (Max) 85 80 A
Current - Collector Pulsed (Icm) 200 150 A
Vce(on) (Max) 2V @ 15V, 60A 2.1V @ 15V, 50A V
Power - Max 350 305 W
Gate Charge 340 120 nC
Td (on/off) @ 25°C 34ns/56ns 21ns/180ns ns
Operating Temperature Range -55 to 150 -40 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-274AA (SUPER-247™) TO-247-3 (PG-TO247-3)
Product Status Obsolete Active
RoHS Status Not specified ROHS3 Compliant

Engineering Selection Recommendations

Product Status Consideration: The IRG4PSC71UPBF is classified as obsolete, making long-term procurement unsustainable. The IGW50N65H5FKSA1 maintains active product status with Infineon Technologies, ensuring continued availability and manufacturing support.

Compliance and Certification: The IGW50N65H5FKSA1 is ROHS3 compliant, meeting current environmental and regulatory requirements. Both parts carry REACH Unaffected status and EAR99 ECCN classification.

Current Rating Derating: The substitute provides 80A versus the original 85A. Applications operating at or near 85A continuous current require thermal and electrical re-analysis to confirm acceptable performance margins within the reduced 305W power budget.

Package Redesign Requirement: Substitution necessitates PCB layout modification due to distinct package geometries (SUPER-247™ versus PG-TO247-3). Pin configurations and thermal interface requirements differ between packages.

Switching Performance Trade-offs: The substitute exhibits lower gate charge (120nC versus 340nC) and faster turn-on delay (21ns versus 34ns), but significantly longer turn-off delay (180ns versus 56ns). These characteristics alter circuit switching frequency response and EMI profile.

Frequently Asked Questions (FAQ)

Q: Can the IGW50N65H5FKSA1 directly replace the IRG4PSC71UPBF without PCB modification?

A: No. The packages are mechanically incompatible. SUPER-247™ (TO-274AA) and PG-TO247-3 have different pin layouts and thermal interface designs. PCB redesign is required.

Q: Is the 80A rating of the substitute sufficient for 85A applications?

A: The substitute provides 5A less continuous current capacity. Applications must be re-evaluated for thermal margin and current distribution. The reduced 305W power dissipation budget must accommodate circuit losses at operating current.

Q: What are the switching performance implications of the longer turn-off delay in the substitute?

A: The IGW50N65H5FKSA1 exhibits 180ns turn-off delay versus 56ns in the original. This affects maximum switching frequency, reverse recovery characteristics, and EMI generation. Circuit timing and gate drive requirements must be re-analyzed.

Q: Does the higher voltage rating (650V versus 600V) create compatibility issues?

A: No. Higher voltage rating provides margin in 600V applications. The substitute operates safely across the original voltage specification.

Q: Are there temperature range differences between the parts?

A: Yes. The original operates -55°C to 150°C; the substitute operates -40°C to 175°C. The substitute has a narrower low-temperature range but extends high-temperature capability by 25°C.

Q: What is the significance of the lower gate charge in the substitute?

A: Lower gate charge (120nC versus 340nC) reduces gate drive power requirements and enables faster switching transitions. Gate driver circuits may require adjustment to optimize performance with the substitute.

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