IRG4PH50KDPBF IGBT 1200V 45A Equivalent & Substitute Parts

Part Overview

The IRG4PH50KDPBF is a 1200V, 45A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This component is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active product lines are necessary for ongoing system design, maintenance, and production continuity. Substitute parts must maintain electrical compatibility within the 1200V voltage class while accommodating variations in current ratings, power dissipation, and switching characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	45	A
Current - Collector Pulsed (Icm)	90	A
Power - Max	200	W
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 24A	V
Gate Charge	180	nC
Switching Energy (on/off)	3.83mJ / 1.9mJ	mJ
Td (on/off) @ 25°C	87ns / 140ns	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution logic for the IRG4PH50KDPBF is based on the following criteria:

Primary Substitution Parameters:

Voltage - Collector Emitter Breakdown (Max): 1200V minimum (1250V-1350V acceptable for higher voltage margin)
Current - Collector (Ic) (Max): 40A minimum (50A-80A acceptable for higher current capacity)
Package / Case: TO-247-3 (mechanical and thermal compatibility)
Mounting Type: Through Hole (PCB assembly compatibility)
Input Type: Standard (gate drive compatibility)
RoHS Status: ROHS3 Compliant (regulatory compliance)

Secondary Compatibility Factors:

Operating Temperature Range: Minimum -40°C to 150°C (IRG4PH50KDPBF operates -55°C to 150°C)
Vce(on) characteristics: Lower values indicate improved efficiency
Switching Energy and Gate Charge: Variations acceptable within application thermal budget
Product Status: Active products preferred for long-term availability

Substitute parts are grouped into three categories based on electrical performance alignment:

Category A - Direct Voltage/Current Match (1200V, 45A+): IKW25N120H3FKSA1, STGW25H120F2, IXYR50N120C3D1

Category B - Higher Voltage Margin (1250V-1350V, 40A+): IHW20N135R5XKSA1, STGW20IH125DF

Category C - Higher Current Capacity (1200V, 80A): STGWA40H120DF2

Parameter Comparison

Part Number	Manufacturer	Voltage (Max) V	Current (Ic) A	Power (Max) W	Vce(on) @ Test V	Gate Charge nC	Package	Product Status
IRG4PH50KDPBF	Infineon	1200	45	200	3.5 @ 15V, 24A	180	TO-247-3	Obsolete
IKW25N120H3FKSA1	Infineon	1200	50	326	2.4 @ 15V, 25A	115	TO-247-3	Active
STGW25H120F2	STMicroelectronics	1200	50	375	2.6 @ 15V, 25A	100	TO-247-3	Active
IXYR50N120C3D1	IXYS	1200	56	290	4.0 @ 15V, 50A	142	TO-247-3	Active
IHW20N135R5XKSA1	Infineon	1350	40	288	1.85 @ 15V, 20A	170	TO-247-3	Active
STGW20IH125DF	STMicroelectronics	1250	40	259	2.5 @ 15V, 15A	68	TO-247-3	Active
STGWA40H120DF2	STMicroelectronics	1200	80	468	2.6 @ 15V, 40A	158	TO-247-3	Active

Engineering Selection Recommendations

For Direct Replacement (Minimum Design Changes):

IKW25N120H3FKSA1 and STGW25H120F2 are primary substitutes. Both maintain 1200V voltage rating and exceed 45A current requirement at 50A. Both are active products with ROHS3 compliance and TO-247-3 package compatibility. IKW25N120H3FKSA1 offers lower Vce(on) (2.4V vs 3.5V) and reduced gate charge (115nC vs 180nC), resulting in improved efficiency and faster switching. STGW25H120F2 provides higher power dissipation capability (375W vs 200W) with comparable switching performance.

For Higher Voltage Margin Applications:

IHW20N135R5XKSA1 and STGW20IH125DF provide 1250V-1350V ratings for applications requiring additional voltage headroom. IHW20N135R5XKSA1 delivers superior Vce(on) performance (1.85V) and is Infineon TrenchStop® technology. STGW20IH125DF offers the lowest gate charge (68nC) among substitutes, enabling fastest switching transitions.

For Higher Current Capacity:

STGWA40H120DF2 accommodates 80A continuous current with 468W power dissipation, suitable for applications requiring thermal margin or future current scaling. Switching energy is lower than IRG4PH50KDPBF (1mJ on-state vs 3.83mJ).

Compliance Verification:

All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original component regulatory profile. All are through-hole mounted in TO-247-3 package, ensuring PCB compatibility without layout modification.

Frequently Asked Questions (FAQ)

Q: Can IKW25N120H3FKSA1 directly replace IRG4PH50KDPBF without circuit modification?

A: IKW25N120H3FKSA1 is electrically compatible as a direct substitute. Both operate at 1200V with standard gate drive input. The 50A rating exceeds the 45A requirement. Lower Vce(on) (2.4V vs 3.5V) and gate charge (115nC vs 180nC) improve efficiency and switching speed. TO-247-3 package ensures mechanical compatibility. No circuit modification is required for basic functionality, though thermal design may benefit from the improved efficiency characteristics.

Q: What is the difference between STGW25H120F2 and IKW25N120H3FKSA1?

A: Both are 1200V, 50A TO-247-3 IGBTs from different manufacturers (STMicroelectronics vs Infineon). STGW25H120F2 offers higher power dissipation (375W vs 326W) and lower gate charge (100nC vs 115nC). IKW25N120H3FKSA1 features lower Vce(on) (2.4V vs 2.6V) and is designated as Trench Field Stop technology. Selection depends on thermal budget and switching frequency requirements.

Q: Why would STGWA40H120DF2 be selected over lower-rated alternatives?

A: STGWA40H120DF2 provides 80A continuous current and 468W power dissipation, double the IRG4PH50KDPBF rating. Selection is appropriate for applications with thermal margin requirements, future current scaling, or where lower switching losses (1mJ on-state vs 3.83mJ) reduce cooling demands. Same 1200V voltage class and TO-247-3 package ensure compatibility.

Q: Are higher voltage rated parts (1250V-1350V) suitable for 1200V applications?

A: Yes. IHW20N135R5XKSA1 (1350V) and STGW20IH125DF (1250V) are suitable for 1200V applications. Higher voltage ratings provide additional voltage margin without affecting normal operation at 1200V. This is standard practice in power electronics design. Both maintain TO-247-3 package and through-hole mounting compatibility.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use TO-247-3 package, identical to IRG4PH50KDPBF. This ensures mechanical fit, thermal interface compatibility, and gate/collector/emitter pin alignment. No PCB layout modification is required. All are through-hole mounted components suitable for standard assembly processes.

Q: How do switching characteristics affect application performance?

A: Switching energy and gate charge variations influence switching frequency capability and gate drive requirements. Lower gate charge (STGW20IH125DF at 68nC) enables faster switching transitions. Lower switching energy (STGWA40H120DF2 at 1mJ on-state) reduces thermal dissipation. These parameters should be evaluated against specific application switching frequency and thermal budget constraints.

Q: What is the significance of Trench Field Stop technology designation?

A: Trench Field Stop (TFS) technology, identified in IKW25N120H3FKSA1, STGW25H120F2, and STGW20IH125DF specifications, represents advanced IGBT architecture providing improved switching performance and lower conduction losses compared to standard designs. This technology is transparent to circuit design but delivers efficiency benefits in high-frequency applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message