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IRG4PH40KDPBF IGBT 1200V 30A Equivalent & Substitute Parts
Part Overview
The IRG4PH40KDPBF is a 1200V, 30A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This device is classified as obsolete and operates across a temperature range of -55°C to 150°C. The part delivers 160W maximum power dissipation with switching characteristics optimized for 800V, 15A operation at 10Ω load impedance.
Due to obsolete product status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term supply availability. Substitute devices maintain electrical compatibility within the 1200V voltage class while offering improved performance characteristics, extended temperature ranges, and active manufacturing status.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 1200 | V |
| Current - Collector (Ic) (Max) | 30 | A |
| Current - Collector Pulsed (Icm) | 60 | A |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A | V |
| Power - Max | 160 | W |
| Switching Energy (on) | 1.31 | mJ |
| Switching Energy (off) | 1.12 | mJ |
| Gate Charge | 94 | nC |
| Td (on/off) @ 25°C | 50/96 | ns |
| Reverse Recovery Time (trr) | 63 | ns |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | - |
| Package / Case | TO-247-3 | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution eligibility is determined by strict adherence to the following electrical and mechanical parameters:
Primary Compatibility Criteria:
- Voltage - Collector Emitter Breakdown: 1200V (exact match required)
- Current - Collector (Ic) (Max): 30A minimum (equal or higher acceptable)
- Mounting Type: Through Hole (required)
- Package / Case: TO-247-3 or equivalent footprint (TO-247AC, TO-247AD, PG-TO247-3-1 acceptable)
- Input Type: Standard (required)
Secondary Compatibility Factors:
- Vce(on) (Max) @ Vge, Ic: Lower values indicate improved efficiency
- Gate Charge: Lower values reduce driver requirements
- Switching Energy: Lower values reduce switching losses
- Operating Temperature Range: Extended ranges provide design margin
- Product Status: Active or Last Time Buy preferred over obsolete
Substitute parts are grouped into two categories: Infineon Technologies manufacturer-recommended alternatives and cross-manufacturer equivalents. All listed substitutes maintain the 1200V/30A electrical specification and TO-247-3 package compatibility.
Parameter Comparison
| Part Number | Manufacturer | Vce(on) Max (V) | Power Max (W) | Gate Charge (nC) | Td on/off (ns) | Temp Range (°C) | Product Status |
|---|---|---|---|---|---|---|---|
| IRG4PH40KDPBF | Infineon | 3.4 | 160 | 94 | 50/96 | -55 to 150 | Obsolete |
| IGW15N120H3FKSA1 | Infineon | 2.4 | 217 | 75 | 21/260 | -40 to 175 | Active |
| IHW15N120R3FKSA1 | Infineon | 1.7 | 254 | 165 | -/300 | -40 to 175 | Active |
| IKW15N120H3FKSA1 | Infineon | 2.4 | 217 | 75 | 21/260 | -40 to 175 | Active |
| IKW15T120FKSA1 | Infineon | 2.2 | 110 | 85 | 50/520 | -40 to 150 | Obsolete |
| IKW25T120FKSA1 | Infineon | 2.2 | 190 | 155 | 50/560 | -40 to 150 | Last Time Buy |
| STGW15H120DF2 | STMicroelectronics | 2.6 | 259 | 67 | 23/111 | -55 to 175 | Active |
| FGH15T120SMD-F155 | onsemi | 2.4 | 333 | 128 | 32/490 | -55 to 175 | Active |
| IXGH15N120B | IXYS | 3.2 | 180 | 69 | 25/180 | -55 to 150 | Active |
| IXGH15N120CD1 | IXYS | 3.8 | 150 | 69 | 25/150 | -55 to 150 | Active |
| IXYH20N120C3 | IXYS | 3.4 | 278 | 53 | 20/90 | -55 to 175 | Active |
Engineering Selection Recommendations
Infineon Technologies Manufacturer-Recommended Substitutes:
IGW15N120H3FKSA1 and IKW15N120H3FKSA1 represent the primary Infineon alternatives. Both devices feature TrenchStop® technology with 1200V/30A ratings, improved Vce(on) of 2.4V, and extended operating temperature to 175°C. Active product status ensures long-term availability. These parts are electrically compatible with the IRG4PH40KDPBF while delivering superior thermal performance (217W vs. 160W).
IHW15N120R3FKSA1 offers the lowest Vce(on) at 1.7V, resulting in reduced conduction losses and highest power dissipation capability (254W). This device is optimal for applications prioritizing efficiency. Active status and extended temperature range support demanding thermal environments.
Cross-Manufacturer Alternatives:
STGW15H120DF2 (STMicroelectronics) provides direct TO-247-3 package compatibility with Trench Field Stop technology. The device maintains -55°C lower temperature limit matching the original part while extending upper range to 175°C. Active status and 259W power rating support thermal margin requirements.
FGH15T120SMD-F155 (onsemi) delivers the highest power dissipation at 333W with Trench Field Stop architecture. Active product status and -55°C to 175°C temperature range provide design flexibility. Gate charge of 128nC requires driver verification.
IXGH15N120B and IXGH15N120CD1 (IXYS) maintain -55°C lower temperature limit and TO-247-3 package compatibility. Both devices are active products with established supply chains. IXGH15N120B offers 180W power rating with moderate Vce(on) of 3.2V.
Compliance Verification:
All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. Moisture sensitivity level remains at MSL 1 (Unlimited) across all alternatives. ECCN classification EAR99 and HTSUS code 8541.29.0095 are consistent across all devices.
Frequently Asked Questions (FAQ)
Q: Can IRG4PH40KDPBF be directly replaced with IGW15N120H3FKSA1?
A: Yes. Both devices share 1200V voltage rating, 30A collector current specification, and TO-247-3 package footprint. IGW15N120H3FKSA1 is electrically compatible with improved performance characteristics. Verify gate drive circuit compatibility due to reduced gate charge (75nC vs. 94nC).
Q: What is the primary difference between IGW15N120H3FKSA1 and IHW15N120R3FKSA1?
A: IHW15N120R3FKSA1 features lower Vce(on) (1.7V vs. 2.4V), resulting in reduced conduction losses and higher power dissipation (254W vs. 217W). IHW15N120R3FKSA1 carries higher gate charge (165nC), requiring driver circuit evaluation. Both maintain 1200V/30A ratings and TO-247-3 compatibility.
Q: Are cross-manufacturer parts (STMicroelectronics, onsemi, IXYS) suitable replacements?
A: Yes. STGW15H120DF2, FGH15T120SMD-F155, IXGH15N120B, and IXGH15N120CD1 all meet the 1200V/30A electrical specification and TO-247-3 package requirement. Each device is an active product with established supply availability. Verify application-specific performance requirements such as switching speed and thermal dissipation.
Q: Does package designation affect mechanical compatibility?
A: TO-247-3, TO-247AC, TO-247AD, and PG-TO247-3-1 designations represent equivalent mechanical packages suitable for through-hole mounting. All listed substitutes are mechanically compatible with IRG4PH40KDPBF PCB layouts. Verify lead spacing and mounting hole alignment with specific device datasheets.
Q: Why is IKW25T120FKSA1 listed as a substitute despite 50A rating?
A: IKW25T120FKSA1 maintains 1200V voltage rating and TO-247-3 package compatibility. The 50A collector current exceeds the 30A requirement, providing design margin. This device is suitable for applications requiring higher current capability within the same voltage class. Last Time Buy status indicates limited future availability.
Q: What performance improvement does TrenchStop® technology provide?
A: TrenchStop® devices (IGW15N120H3FKSA1, IKW15N120H3FKSA1, IHW15N120R3FKSA1) feature reduced Vce(on) and improved switching characteristics compared to standard IGBT architectures. These improvements reduce conduction and switching losses, enabling higher power dissipation within identical package constraints.
Q: How does operating temperature range affect device selection?
A: IRG4PH40KDPBF operates -55°C to 150°C. Most active substitutes extend upper range to 175°C, providing thermal margin in high-temperature applications. STGW15H120DF2 and FGH15T120SMD-F155 maintain -55°C lower limit while extending upper range, matching or exceeding original specifications.
Q: Is gate charge compatibility critical for substitution?
A: Gate charge variation (53nC to 165nC across alternatives) affects gate drive circuit performance. Lower gate charge reduces driver power dissipation and switching losses. Verify gate drive circuit can supply required charge within specified time intervals. Most modern drivers accommodate this range without modification.
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