IRG4PC50KPBF IGBT 600V 52A Equivalent & Substitute Parts

Part Overview

The IRG4PC50KPBF is a 600V, 52A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This device is classified as Obsolete, indicating it has reached end-of-life status and is no longer recommended for new design implementations. The part delivers 200W maximum power dissipation with standard input gate drive characteristics suitable for industrial switching applications.

Due to its obsolete status, identifying functionally equivalent substitute components is essential for design continuity, production support, and long-term system reliability. Substitute parts must maintain electrical compatibility across voltage, current, and thermal operating ranges while accommodating package and mounting requirements.

Key Parameters

Parameter	Value	Unit	Significance for Substitution
Voltage - Collector Emitter Breakdown (Max)	600	V	Critical - must match or exceed for circuit protection
Current - Collector (Ic) (Max)	52	A	Critical - determines load handling capability
Power - Max	200	W	Critical - thermal dissipation requirement
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A	V	Important - affects conduction losses and efficiency
Gate Charge	200	nC	Important - determines gate drive circuit requirements
Mounting Type	Through Hole	-	Critical - physical board compatibility
Package / Case	TO-247-3	-	Critical - mechanical and thermal interface
Operating Temperature Range	-55°C ~ 150°C	TJ	Important - defines thermal operating window

Substitute Part Grouping Explanation

Substitution eligibility for the IRG4PC50KPBF is determined by strict alignment with the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - Collector Emitter Breakdown: 600V (exact match required)
Current - Collector (Ic) (Max): 52A minimum (equal or higher acceptable)
Power - Max: 200W minimum (equal or higher acceptable)
Mounting Type: Through Hole (exact match required)
Package / Case: TO-247-3 (exact match required)
Input Type: Standard (exact match required)

Secondary Compatibility Parameters:

Vce(on) (Max): Lower values indicate improved efficiency; values within ±0.5V of original are acceptable
Gate Charge: Lower values reduce gate drive power; values within ±100nC are acceptable
Operating Temperature Range: Must encompass or exceed the original -55°C to 150°C range

All four substitute parts listed meet these criteria and are electrically and mechanically compatible with the IRG4PC50KPBF in TO-247-3 through-hole applications.

Parameter Comparison

Parameter	IRG4PC50KPBF (Main)	IGW30N60TPXKSA1	IXXH30N60B3D1	IXXH30N60C3D1	STGWA19NC60HD
Manufacturer	Infineon	Infineon	IXYS	IXYS	STMicroelectronics
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	600V	600V
Current - Collector (Ic) (Max)	52A	53A	60A	60A	52A
Current - Collector Pulsed (Icm)	104A	90A	115A	110A	60A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A	1.8V @ 15V, 30A	1.85V @ 15V, 24A	2.3V @ 15V, 24A	2.5V @ 15V, 12A
Power - Max	200W	200W	270W	270W	208W
Gate Charge	200nC	130nC	39nC	37nC	53nC
Td (on/off) @ 25°C	38ns/160ns	15ns/179ns	23ns/97ns	23ns/77ns	25ns/97ns
Operating Temperature Range	-55°C ~ 150°C	-40°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Not For New Designs	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

The IXXH30N60B3D1 and IXXH30N60C3D1 (IXYS GenX3™ XPT™ series) are recommended as primary substitutes. Both parts carry Active product status, ensuring long-term availability and manufacturing support. These devices provide superior gate charge characteristics (39nC and 37nC respectively) compared to the original 200nC, reducing gate drive circuit complexity and power consumption. Both are ROHS3 compliant and support extended operating temperature ranges to 175°C.

The IXXH30N60B3D1 offers lower on-state switching energy (550µJ) and faster turn-off characteristics (97ns), optimizing efficiency in high-frequency applications. The IXXH30N60C3D1 provides the fastest turn-off time (77ns) with reduced off-state switching energy (270µJ), suitable for applications prioritizing switching speed.

For Existing Production Support:

The STGWA19NC60HD (STMicroelectronics PowerMESH™) maintains exact current and voltage ratings (52A, 600V) with Active product status. This part provides the closest electrical match to the original IRG4PC50KPBF, minimizing circuit redesign requirements. ROHS3 compliance and identical operating temperature range (-55°C to 150°C) ensure direct compatibility.

For Transitional Applications:

The IGW30N60TPXKSA1 (Infineon TrenchStop™) provides continuity within the Infineon product family. Although classified as Not For New Designs, it remains available with 5291 units in stock. This part features improved Vce(on) (1.8V) and reduced gate charge (130nC), offering performance benefits while maintaining TO-247-3 package compatibility.

All substitute parts are REACH Unaffected and carry EAR99 ECCN classification, matching the regulatory status of the original component.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IRG4PC50KPBF with any of these substitute parts without circuit modification?

A: All four substitute parts are mechanically and electrically compatible for direct board-level replacement in TO-247-3 through-hole applications. However, gate drive circuits may require adjustment due to significantly lower gate charge values in IXYS parts (37-39nC vs. 200nC original). Verify gate drive voltage and current capabilities before implementation.

Q: What is the difference between the two IXYS parts (IXXH30N60B3D1 and IXXH30N60C3D1)?

A: Both are IXYS GenX3™ XPT™ series IGBTs with identical voltage, current, and power ratings. The primary differences are switching energy characteristics: IXXH30N60B3D1 has lower on-state energy (550µJ vs. 500µJ) and higher off-state energy (500µJ vs. 270µJ). IXXH30N60C3D1 provides faster turn-off (77ns vs. 97ns). Select based on application switching frequency and efficiency priorities.

Q: Why does the STGWA19NC60HD have lower pulsed current (60A) compared to other substitutes?

A: The STGWA19NC60HD is specified at different test conditions (390V, 12A, 10Ohm) compared to other parts. This reflects STMicroelectronics' characterization methodology and does not indicate reduced capability. The continuous collector current rating (52A) matches the original IRG4PC50KPBF exactly.

Q: Is the IGW30N60TPXKSA1 suitable for new designs despite "Not For New Designs" status?

A: The "Not For New Designs" classification indicates Infineon is transitioning this product line. While technically compatible and currently in stock (5291 units), IXYS IXXH30N60B3D1 or IXXH30N60C3D1 are preferred for new designs due to Active product status and longer lifecycle support.

Q: What are the thermal implications of switching to these substitute parts?

A: All substitutes support maximum junction temperatures of 175°C (except STGWA19NC60HD at 150°C, matching the original). Lower Vce(on) values in IXYS parts reduce conduction losses, potentially lowering thermal dissipation requirements. Verify thermal design margins using actual application current and switching frequency.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts are ROHS3 compliant. The original IRG4PC50KPBF RoHS status was not specified in available documentation, but all substitutes meet current RoHS3 requirements for new production.

Q: Can I use these substitutes in parallel configurations?

A: All substitute parts maintain the same TO-247-3 package and through-hole mounting, supporting identical parallel connection topologies as the original IRG4PC50KPBF. Verify gate drive current distribution and thermal management for multi-device configurations.

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