IRG4PC30FDPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRG4PC30FDPBF is a 600V, 31A IGBT manufactured by Infineon Technologies in TO-247AC packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing applications. The part operates within a -55°C to 150°C junction temperature range and is rated for 100W maximum power dissipation. Equivalent alternatives must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating through-hole mounting requirements.

Substiute Parts

IRG4PC30FDPBF
Infineon TechnologiesIn Stock: 986IRG4PC30FDPBF Datasheet
IRG4PC30FDPBF
Current Part
IXDR35N60BD1
IXYSIn Stock: 824IXDR35N60BD1 Datasheet
IXDR35N60BD1
MFR Recommended
STGW20H60DF
STMicroelectronicsIn Stock: 1279STGW20H60DF Datasheet
STGW20H60DF
MFR Recommended
STGW30H65FB
STMicroelectronicsIn Stock: 8190STGW30H65FB Datasheet
STGW30H65FB
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 31 A
Current - Collector Pulsed (Icm) 120 A
Power - Max 100 W
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A V
Gate Charge 51 nC
Switching Energy (on/off) 630µJ / 1.39mJ µJ / mJ
Td (on/off) @ 25°C 42ns / 230ns ns
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IRG4PC30FDPBF is determined by the following critical parameters:

Voltage Rating: Substitute parts must maintain a collector-emitter breakdown voltage of 600V or higher to ensure safe operation within the original circuit design envelope.

Current Rating: The continuous collector current (Ic) must equal or exceed 31A. Pulsed current capability (Icm) should accommodate the 120A specification where applicable.

Power Dissipation: Maximum power rating must support the 100W thermal requirement, accounting for junction temperature limits.

Packaging: All substitutes utilize TO-247-3 through-hole mounting, maintaining mechanical and thermal interface compatibility.

Input Type: Standard gate drive input is required across all alternatives.

Compliance: RoHS3 compliance and REACH unaffected status are maintained across all substitute options.

The three substitute parts identified—IXDR35N60BD1, STGW20H60DF, and STGW30H65FB—meet or exceed these parameters while offering active product status and improved availability.

Parameter Comparison

Parameter IRG4PC30FDPBF IXDR35N60BD1 STGW20H60DF STGW30H65FB
Manufacturer Infineon Technologies IXYS STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active
Voltage - Collector Emitter Breakdown (Max) 600V 600V 600V 650V
Current - Collector (Ic) (Max) 31A 38A 40A 30A
Current - Collector Pulsed (Icm) 120A 48A 80A 120A
Power - Max 100W 125W 167W 260W
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A 2.7V @ 15V, 35A 2V @ 15V, 20A 2V @ 15V, 30A
Gate Charge 51nC 140nC 115nC 149nC
Switching Energy (on) 630µJ 1.6mJ 209µJ 151µJ
Switching Energy (off) 1.39mJ 800µJ 261µJ 293µJ
Td (on/off) @ 25°C 42ns / 230ns Not specified 42.5ns / 177ns 37ns / 146ns
Operating Temperature Range -55°C to 150°C -55°C to 150°C -55°C to 175°C -55°C to 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Inventory Status 933 Pcs In Stock 782 Pcs In Stock 1210 Pcs In Stock 8120 Pcs In Stock

Engineering Selection Recommendations

IXDR35N60BD1 (IXYS): This NPT-type IGBT provides 38A continuous current and 125W power rating, exceeding the IRG4PC30FDPBF specifications. The device maintains 600V voltage rating and -55°C to 150°C operating range. Active product status ensures long-term availability. Higher gate charge (140nC) and Vce(on) (2.7V) require gate drive circuit evaluation. ISOPLUS247™ packaging maintains TO-247-3 mechanical compatibility.

STGW20H60DF (STMicroelectronics): This Trench Field Stop IGBT delivers 40A continuous current and 167W power dissipation with 600V rating. Extended operating temperature range (-55°C to 175°C) provides thermal margin. Lower switching energy (209µJ on, 261µJ off) and faster switching times (42.5ns/177ns) improve efficiency. Gate charge of 115nC is intermediate between the original and IXDR35N60BD1. Active product status with 1210 units in stock.

STGW30H65FB (STMicroelectronics): This Trench Field Stop IGBT matches the original 30A continuous current specification with 260W power rating and 650V voltage capability. Pulsed current (120A) directly matches the IRG4PC30FDPBF. Fastest switching times (37ns/146ns) and lowest on-state switching energy (151µJ) optimize performance. Extended temperature range (-55°C to 175°C) and highest inventory availability (8120 units) support production continuity.

All three substitutes maintain RoHS3 compliance, REACH unaffected status, and through-hole TO-247-3 mounting compatibility. Selection depends on application-specific requirements for current margin, power dissipation, and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IXDR35N60BD1 directly replace the IRG4PC30FDPBF without circuit modifications?

A: The IXDR35N60BD1 maintains voltage and temperature specifications but exhibits higher gate charge (140nC vs. 51nC) and higher Vce(on) (2.7V vs. 1.8V). Gate drive circuits must supply adequate charge, and thermal design must account for increased conduction losses. Mechanical compatibility is confirmed through TO-247-3 packaging.

Q: What are the switching performance differences between substitute options?

A: The STGW20H60DF and STGW30H65FB exhibit significantly lower switching energy compared to the IRG4PC30FDPBF. STGW30H65FB provides the fastest switching times (37ns/146ns) and lowest on-state energy (151µJ), reducing switching losses. IXDR35N60BD1 switching times are not specified. Application frequency and thermal budget determine the optimal selection.

Q: Is the 650V rating of STGW30H65FB compatible with 600V circuit designs?

A: Yes. The 650V rating provides overvoltage margin and is fully compatible with 600V applications. The higher voltage rating does not degrade performance in 600V circuits and enhances reliability under transient conditions.

Q: How do gate charge differences affect circuit design?

A: Gate charge determines the charge quantity required to switch the IGBT. The IRG4PC30FDPBF requires 51nC, while substitutes range from 115nC to 149nC. Higher gate charge increases switching time and gate drive power consumption. Existing gate drive circuits must supply sufficient current to charge the gate within acceptable switching time windows.

Q: Are all substitutes available in the same packaging?

A: All substitutes utilize TO-247-3 through-hole packaging. The IXDR35N60BD1 uses ISOPLUS247™ designation, which is mechanically and thermally equivalent to standard TO-247. Pin configuration and thermal interface remain compatible across all options.

Q: Which substitute offers the best thermal performance?

A: The STGW30H65FB provides the highest power rating (260W) and lowest switching losses (151µJ on, 293µJ off), resulting in superior thermal performance. Extended operating temperature range (-55°C to 175°C) provides additional thermal margin compared to the original specification (-55°C to 150°C).

Q: What is the inventory status for each substitute?

A: STGW30H65FB offers the highest availability with 8120 units in stock. STGW20H60DF provides 1210 units, and IXDR35N60BD1 offers 782 units. All substitutes are classified as active products, ensuring continued availability beyond current inventory levels.

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