IRG4CC50UB IGBT Equivalent & Substitute Parts

Part Overview

The IRG4CC50UB is an IGBT die manufactured by Infineon Technologies, rated for 600 V collector-emitter breakdown voltage and 55 A maximum collector current. This component is classified as obsolete, indicating discontinuation from active production. The through-hole die package and standard input type configuration define its original application scope. Due to obsolete status, equivalent substitute parts with active production status are necessary for new designs and ongoing procurement requirements.

Substiute Parts

IRG4CC50UB
Infineon TechnologiesIn Stock: 786IRG4CC50UB Datasheet
IRG4CC50UB
Current Part
IGC15T65QEX1SA1
Infineon TechnologiesIn Stock: 1145IGC15T65QEX1SA1 Datasheet
IGC15T65QEX1SA1
MFR Recommended

Key Parameters

Parameter Value Unit
Manufacturer Part Number IRG4CC50UB
Manufacturer Infineon Technologies
Category Transistors, IGBTs
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 55 A
Vce(on) (Max) @ Vge, Ic 2 V @ 15 V, 10 A
Input Type Standard
Mounting Type Through Hole
Package / Case Die
Product Status Obsolete
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRG4CC50UB is determined by the following critical parameters:

Voltage Rating Compatibility: The main part operates at 600 V maximum collector-emitter breakdown voltage. Substitute parts must maintain equal or higher voltage ratings to ensure safe operation within the original circuit design envelope.

Current Rating Compatibility: The main part is rated for 55 A maximum collector current. Substitute parts with equal or higher current ratings satisfy the electrical load requirements of the original application.

Input Type Consistency: Both the main part and substitute must employ Standard input type configuration to maintain gate drive compatibility.

Package Type Consideration: Both the main part and substitute are die packages. Die-to-die substitution is permissible when electrical parameters align, as the die itself represents the functional semiconductor element independent of external packaging.

Compliance and Production Status: The main part is obsolete and RoHS non-compliant. Active production substitutes with modern compliance certifications (RoHS3) are preferred for new designs and long-term availability assurance.

Parameter Comparison

Parameter IRG4CC50UB (Main Part) IGC15T65QEX1SA1 (Substitute) Compatibility Assessment
Manufacturer Infineon Technologies Infineon Technologies Same manufacturer
Category Transistors, IGBTs Transistors, IGBTs Identical category
Voltage - Collector Emitter Breakdown (Max) 600 V 650 V Substitute rated higher; acceptable
Current - Collector (Ic) (Max) 55 A 30 A Substitute rated lower; application-dependent
Vce(on) (Max) @ Vge, Ic 2 V @ 15 V, 10 A 2.32 V @ 15 V, 30 A Substitute exhibits higher on-state voltage
Input Type Standard Standard Identical input type
Mounting Type Through Hole Surface Mount Different mounting technology
Package / Case Die Die Identical package type
IGBT Type Trench Field Stop Substitute uses advanced technology
Product Status Obsolete Active Substitute in active production
Operating Temperature -40°C ~ 175°C (TJ) Substitute specifies operating range
RoHS Status RoHS non-compliant ROHS3 Compliant Substitute meets modern compliance
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical MSL rating
REACH Status REACH Unaffected REACH Unaffected Both unaffected by REACH

Engineering Selection Recommendations

For Active Production Designs: The IGC15T65QEX1SA1 substitute is suitable when the application current requirement does not exceed 30 A. The higher voltage rating (650 V vs. 600 V) provides additional design margin. The Trench Field Stop technology and ROHS3 compliance align with modern manufacturing standards and regulatory requirements.

Current Rating Limitation: The substitute part is rated for 30 A maximum collector current, compared to the main part's 55 A rating. Applications requiring sustained currents above 30 A cannot use this substitute without thermal and reliability analysis. Pulsed current capability reaches 90 A, which may accommodate intermittent high-current transients.

On-State Voltage Consideration: The substitute exhibits 2.32 V on-state voltage at 30 A versus 2 V at 10 A for the main part. This represents increased conduction losses in the substitute, affecting thermal management and efficiency calculations.

Mounting Technology Transition: The main part uses through-hole mounting while the substitute uses surface-mount technology. Circuit board redesign is required for physical integration of the substitute.

Compliance Advantage: The substitute's ROHS3 compliance and active production status eliminate obsolescence risk and support long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IGC15T65QEX1SA1 directly replace the IRG4CC50UB in all applications?

A: Direct replacement is not universal. The substitute is suitable only for applications where the maximum sustained collector current does not exceed 30 A. Applications designed for the full 55 A rating of the main part require current derating analysis or alternative substitute selection.

Q: What is the significance of the voltage rating difference (600 V vs. 650 V)?

A: The substitute's higher voltage rating (650 V) provides additional safety margin above the original 600 V specification. This is advantageous for circuit designs with voltage transients or overshoot conditions. No circuit modification is required due to this rating increase.

Q: How does the Trench Field Stop technology affect substitution compatibility?

A: Trench Field Stop is an advanced IGBT technology that improves switching performance and reduces losses compared to standard IGBT designs. This technology difference does not prevent substitution but may alter switching characteristics and thermal behavior. Circuit performance may improve or require re-evaluation depending on the specific application.

Q: What are the implications of the on-state voltage difference?

A: The substitute's higher on-state voltage (2.32 V at 30 A vs. 2 V at 10 A) results in increased conduction losses. For continuous operation, this increases heat dissipation requirements. Thermal design calculations must account for this difference to ensure adequate heat sinking.

Q: Does the mounting type change (through-hole to surface-mount) require circuit board redesign?

A: Yes. Through-hole and surface-mount technologies require different PCB footprints, trace routing, and assembly processes. Complete circuit board redesign is necessary to accommodate the surface-mount die package of the substitute.

Q: Is the substitute suitable for new product designs?

A: Yes, provided the application current requirement does not exceed 30 A. The substitute's active production status, ROHS3 compliance, and modern Trench Field Stop technology make it appropriate for new designs. The higher voltage rating and improved technology offer design advantages over the obsolete main part.

Q: What is the pulsed current capability of the substitute, and how does it differ from sustained current?

A: The substitute is rated for 90 A pulsed current (Icm) compared to 30 A sustained collector current (Ic). Pulsed operation allows higher instantaneous current for brief durations without exceeding thermal limits. Applications with intermittent high-current transients may utilize this pulsed capability within the specified pulse duration and duty cycle constraints.

Q: Are there any compliance or regulatory advantages to using the substitute?

A: Yes. The substitute is ROHS3 compliant, whereas the main part is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the substitute eliminates compliance risk. Both parts are REACH unaffected, providing equivalent regulatory status in this regard.

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