IRG4BC40W-LPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRG4BC40W-LPBF is a 600V, 40A IGBT manufactured by Infineon Technologies in TO-262 package configuration. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The part operates through a standard input type with maximum power dissipation of 160W and is suitable for high-voltage switching applications requiring through-hole mounting.

Substiute Parts

IRG4BC40W-LPBF
Infineon TechnologiesIn Stock: 1272IRG4BC40W-LPBF Datasheet
IRG4BC40W-LPBF
Current Part
IGP20N65H5XKSA1
Infineon TechnologiesIn Stock: 1533IGP20N65H5XKSA1 Datasheet
IGP20N65H5XKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A V
Power - Max 160 W
Gate Charge 98 nC
Switching Energy (on/off) 110µJ / 230µJ µJ
Td (on/off) @ 25°C 27ns / 100ns ns
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole -
Package / Case TO-262-3 -
Input Type Standard -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the IRG4BC40W-LPBF is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The substitute part must maintain a collector-emitter breakdown voltage rating equal to or greater than 600V to ensure safe operation within the original design envelope.

Current Rating: The substitute part must support a continuous collector current (Ic) rating of 40A or greater to handle the specified load without thermal stress.

Pulsed Current Capability: The substitute part must accommodate pulsed collector current (Icm) sufficient for transient conditions in the application.

On-State Voltage (Vce(on)): The substitute part must exhibit comparable or lower on-state voltage at the specified gate and collector conditions to maintain efficiency and thermal performance.

Power Dissipation: The substitute part must support maximum power dissipation equal to or greater than 160W.

Gate Charge and Switching Characteristics: The substitute part must demonstrate compatible gate charge and switching delay times to ensure proper integration with existing gate drive circuitry.

Mounting and Package: The substitute part must be available in through-hole configuration to maintain PCB compatibility, though package form factor may differ (TO-262 to TO-220 transition is acceptable with appropriate mechanical adaptation).

Compliance and Status: The substitute part must maintain RoHS3 compliance and active product status to ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter IRG4BC40W-LPBF (Main) IGP20N65H5XKSA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies -
Category Transistors, IGBTs Transistors, IGBTs -
Voltage - Collector Emitter Breakdown (Max) 600 650 V
Current - Collector (Ic) (Max) 40 42 A
Current - Collector Pulsed (Icm) 160 60 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A 2.1V @ 15V, 20A V
Power - Max 160 125 W
Gate Charge 98 48 nC
Switching Energy (on) 110 170 µJ
Switching Energy (off) 230 60 µJ
Td (on) @ 25°C 27 18 ns
Td (off) @ 25°C 100 156 ns
Operating Temperature Range -55 to 150 -55 to 150 °C
Mounting Type Through Hole Through Hole -
Package / Case TO-262-3 TO-220-3 -
Input Type Standard Standard -
Product Status Obsolete Active -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -

Engineering Selection Recommendations

The IGP20N65H5XKSA1 qualifies as a functional substitute for the obsolete IRG4BC40W-LPBF based on the following engineering criteria:

Voltage and Current Ratings: The substitute part exceeds the minimum voltage requirement with a 650V rating compared to 600V, providing additional design margin. The continuous collector current rating of 42A meets the 40A requirement.

On-State Performance: The substitute part demonstrates improved on-state voltage (2.1V versus 2.5V at identical test conditions), resulting in lower conduction losses and reduced thermal dissipation requirements.

Switching Characteristics: The substitute part exhibits faster turn-on delay (18ns versus 27ns) and lower gate charge (48nC versus 98nC), enabling improved switching performance and reduced gate drive power requirements.

Compliance and Availability: Both parts maintain ROHS3 compliance, unlimited moisture sensitivity rating, and REACH unaffected status. The substitute part holds active product status, ensuring long-term procurement availability and manufacturer support.

Package Consideration: The substitute part transitions from TO-262 to TO-220-3 package. Both are through-hole configurations with compatible pin assignments (collector, gate, emitter). PCB layout modification is required to accommodate the different package footprint.

Power Dissipation Trade-off: The substitute part specifies 125W maximum power dissipation compared to 160W for the original part. Applications operating near the 160W limit require thermal analysis to confirm compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IGP20N65H5XKSA1 directly replace the IRG4BC40W-LPBF without circuit modification?

A: Electrical substitution is feasible due to compatible voltage, current, and gate drive characteristics. However, package transition from TO-262 to TO-220-3 requires PCB footprint modification. Pin configuration (collector, gate, emitter) remains consistent between packages.

Q: What is the impact of the lower pulsed current rating (60A versus 160A) in the substitute part?

A: The substitute part supports lower pulsed collector current. Applications requiring transient current handling above 60A must be evaluated against actual circuit demands. The continuous current rating of 42A remains adequate for the specified 40A requirement.

Q: How do the switching energy differences affect circuit performance?

A: The substitute part exhibits higher turn-on switching energy (170µJ versus 110µJ) and lower turn-off switching energy (60µJ versus 230µJ). Total switching energy per cycle may differ depending on application frequency. Gate drive circuitry must accommodate the lower gate charge requirement (48nC versus 98nC).

Q: Is thermal management affected by the lower maximum power rating?

A: The substitute part specifies 125W maximum power dissipation versus 160W for the original part. Applications operating at high duty cycles near the original 160W limit require thermal analysis. The improved on-state voltage (2.1V versus 2.5V) reduces conduction losses, partially offsetting the lower power rating.

Q: Are there compliance or regulatory differences between the two parts?

A: Both parts maintain identical compliance status: ROHS3 compliant, REACH unaffected, EAR99 classification, and unlimited moisture sensitivity rating. No regulatory barriers exist for substitution.

Q: What PCB design considerations apply to the package transition?

A: The TO-220-3 package requires different mounting hole spacing and lead configuration compared to TO-262-3. Thermal interface design may differ due to package geometry. Mechanical mounting hardware and heatsink compatibility must be re-evaluated for the new package form factor.

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