IRG4BC30W-SPBF IGBT 600V 23A Equivalent & Substitute Parts

Part Overview

The IRG4BC30W-SPBF is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage with 23A maximum collector current and 100W power dissipation. This device is packaged in a surface mount D2PAK (TO-263-3) configuration with two leads plus tab.

The IRG4BC30W-SPBF is classified as obsolete. Locating equivalent or substitute components is necessary for new designs, production continuity, and long-term system support where this part is no longer available through standard distribution channels.

Substiute Parts

IRG4BC30W-SPBF

Infineon TechnologiesIn Stock: 979IRG4BC30W-SPBF Datasheet

Current PartRFQ

IGB15N60TATMA1

Infineon TechnologiesIn Stock: 1747IGB15N60TATMA1 Datasheet

MFR RecommendedRFQ

STGB10H60DF

STMicroelectronicsIn Stock: 1349STGB10H60DF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRG4BC30W-SPBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Voltage - Collector Emitter Breakdown (Max): 600V minimum
• Package / Case: TO-263-3 (D2PAK) surface mount configuration
• Input Type: Standard gate drive
• Mounting Type: Surface Mount

Performance Alignment Criteria:

• Current - Collector (Ic) (Max): Equal to or greater than 23A
• Power - Max: Equal to or greater than 100W
• Operating Temperature Range: Must encompass or exceed -55°C to 150°C

Both identified substitute parts meet the mandatory compatibility criteria and provide equal or superior performance characteristics within the specified electrical and thermal operating envelope.

Parameter Comparison

Engineering Selection Recommendations

IGB15N60TATMA1 (Infineon Technologies TrenchStop® Series)

This substitute provides superior current handling (30A vs. 23A) and increased power dissipation capability (130W vs. 100W). The device maintains 600V voltage rating and D2PAK packaging compatibility. The IGB15N60TATMA1 is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The lower on-state voltage (2.05V vs. 2.7V) reduces conduction losses. The higher gate charge (87nC vs. 51nC) and increased switching energy require gate drive circuit evaluation for compatibility with existing designs.

STGB10H60DF (STMicroelectronics Trench Field Stop Series)

This substitute maintains the 600V voltage rating and D2PAK package configuration. The 20A collector current rating approaches the original 23A specification, with 115W power dissipation exceeding the 100W requirement. The STGB10H60DF is classified as Active product status with ROHS3 compliance. The lower on-state voltage (1.95V vs. 2.7V) and reduced switching energy (on-state: 83µJ vs. 130µJ) provide improved efficiency characteristics. The gate charge (57nC) and switching delays remain within comparable ranges to the original device.

Both substitutes are Active products with current manufacturing support and regulatory compliance certifications, providing superior availability compared to the obsolete IRG4BC30W-SPBF.

Frequently Asked Questions (FAQ)

Q: Can the IGB15N60TATMA1 be used as a direct replacement for the IRG4BC30W-SPBF?

A: The IGB15N60TATMA1 is electrically compatible within the same voltage class (600V) and package format (D2PAK). Both devices feature standard gate drive inputs and surface mount configuration. The higher current rating (30A vs. 23A) and power dissipation (130W vs. 100W) provide design margin. However, the increased gate charge (87nC vs. 51nC) and switching energy may require gate drive circuit adjustment to maintain equivalent switching performance.

Q: What are the key differences between the two substitute options?

A: The IGB15N60TATMA1 offers higher current capacity (30A) and power handling (130W) with lower on-state voltage (2.05V), making it suitable for applications requiring maximum current density. The STGB10H60DF provides a closer current match (20A) to the original device with lower switching energy (83µJ on-state), offering better efficiency in applications sensitive to switching losses. Both maintain 600V rating and D2PAK packaging.

Q: Are both substitute parts available in the same packaging format?

A: Yes. Both the IGB15N60TATMA1 and STGB10H60DF are supplied in TO-263-3 (D2PAK) surface mount packages with two leads plus tab, identical to the IRG4BC30W-SPBF. Printed circuit board layouts and thermal management designs require no modification for package compatibility.

Q: What is the significance of the product status difference?

A: The IRG4BC30W-SPBF is classified as Obsolete, indicating discontinued manufacturing and limited availability through distribution channels. Both substitute parts are classified as Active, confirming current production, established supply chains, and long-term availability. Active status also ensures continued compliance with evolving regulatory requirements such as ROHS3.

Q: How do the operating temperature ranges compare?

A: The IRG4BC30W-SPBF operates from -55°C to 150°C (TJ). The IGB15N60TATMA1 operates from -40°C to 175°C (TJ), with a higher upper temperature limit. The STGB10H60DF operates from -55°C to 175°C (TJ), matching the lower temperature limit of the original device while extending the upper limit. For applications requiring operation below -40°C, the STGB10H60DF maintains full compatibility.

Q: What compliance certifications apply to these substitute parts?

A: Both substitute parts carry ROHS3 compliance certification and REACH Unaffected status, meeting current environmental and regulatory requirements. The IRG4BC30W-SPBF compliance status is not specified in the provided data. Both substitutes are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original device classification.