IRG4BC30KD-SPBF IGBT 600V 28A Equivalent & Substitute Parts

Part Overview

The IRG4BC30KD-SPBF is a 600V, 28A IGBT manufactured by Infineon Technologies in D2PAK surface mount packaging. This component is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term supply chain reliability. Substitute IGBTs in this voltage and current class must maintain electrical compatibility within the 600V breakdown voltage specification and support equivalent or higher current ratings to function as direct replacements in existing circuit designs.

Substiute Parts

IRG4BC30KD-SPBF
Infineon TechnologiesIn Stock: 1514IRG4BC30KD-SPBF Datasheet
IRG4BC30KD-SPBF
Current Part
IKB15N60TATMA1
Infineon TechnologiesIn Stock: 2333IKB15N60TATMA1 Datasheet
IKB15N60TATMA1
MFR Recommended
STGB19NC60KDT4
STMicroelectronicsIn Stock: 25353STGB19NC60KDT4 Datasheet
STGB19NC60KDT4
Direct
STGB14NC60KDT4
STMicroelectronicsIn Stock: 2260STGB14NC60KDT4 Datasheet
STGB14NC60KDT4
MFR Recommended
STGB15H60DF
STMicroelectronicsIn Stock: 1358STGB15H60DF Datasheet
STGB15H60DF
MFR Recommended
STGB19NC60HDT4
STMicroelectronicsIn Stock: 5317STGB19NC60HDT4 Datasheet
STGB19NC60HDT4
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 28 A
Current - Collector Pulsed (Icm) 56 A
Power - Max 100 W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A V
Gate Charge 67 nC
Switching Energy (on/off) 600µJ / 580µJ µJ
Td (on/off) @ 25°C 60ns / 160ns ns
Reverse Recovery Time (trr) 42 ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IRG4BC30KD-SPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - Collector Emitter Breakdown: 600V (exact match required)
  • Current - Collector (Ic) (Max): minimum 28A (equal or higher acceptable)
  • Package / Case: TO-263-3, D2PAK (mechanical compatibility required)
  • Mounting Type: Surface Mount (process compatibility required)
  • Input Type: Standard (gate drive compatibility)

Secondary Compatibility Parameters:

  • Vce(on) at rated conditions (lower values indicate improved performance)
  • Gate Charge (affects switching speed and driver requirements)
  • Operating Temperature Range (must encompass application requirements)
  • RoHS and REACH compliance status

The substitute parts listed below satisfy all primary criteria and maintain electrical compatibility within the specified parameter ranges. All substitute parts are classified as active product status, ensuring ongoing availability and technical support.

Parameter Comparison

Parameter IRG4BC30KD-SPBF (Main) IKB15N60TATMA1 STGB19NC60KDT4 STGB14NC60KDT4 STGB15H60DF STGB19NC60HDT4
Manufacturer Infineon Infineon STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Voltage - Collector Emitter Breakdown (Max) 600V 600V 600V 600V 600V 600V
Current - Collector (Ic) (Max) 28A 30A 35A 25A 30A 40A
Current - Collector Pulsed (Icm) 56A 45A 75A 50A 60A 60A
Power - Max 100W 130W 125W 80W 115W 130W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A 2.05V @ 15V, 15A 2.75V @ 15V, 12A 2.5V @ 15V, 7A 2.0V @ 15V, 15A 2.5V @ 15V, 12A
Gate Charge 67nC 87nC 55nC 34.4nC 81nC 53nC
Switching Energy (on/off) 600µJ / 580µJ 570µJ 165µJ / 255µJ 82µJ / 155µJ 136µJ / 207µJ 85µJ / 189µJ
Td (on/off) @ 25°C 60ns / 160ns 17ns / 188ns 30ns / 105ns 22.5ns / 116ns 24.5ns / 118ns 25ns / 97ns
Reverse Recovery Time (trr) 42ns 34ns 31ns 37ns 103ns 31ns
Operating Temperature Range -55 to 150°C -40 to 175°C -55 to 150°C -55 to 150°C -55 to 175°C -55 to 150°C
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

IKB15N60TATMA1 (Infineon Technologies, Active Status): This Trench Field Stop IGBT maintains manufacturer continuity with Infineon and provides 30A collector current, exceeding the 28A requirement. The lower Vce(on) of 2.05V indicates improved conduction efficiency. Extended operating temperature range to 175°C provides additional thermal margin. Gate charge of 87nC requires driver compatibility verification. Switching energy of 570µJ is comparable to the main part. This part is recommended for applications requiring Infineon product line continuity.

STGB19NC60KDT4 (STMicroelectronics, Active Status): This PowerMESH™ IGBT provides 35A collector current with superior switching performance. Gate charge of 55nC is significantly lower than the main part, reducing driver stress. Switching energy is substantially reduced (165µJ on, 255µJ off), indicating faster switching transitions. Vce(on) of 2.75V is comparable to the main part. Operating temperature range matches the main part at -55 to 150°C. This part is recommended for applications where improved switching performance is beneficial.

STGB15H60DF (STMicroelectronics, Active Status): This Trench Field Stop IGBT provides 30A collector current with the lowest Vce(on) at 2.0V, indicating superior conduction efficiency. Extended operating temperature range to 175°C provides additional thermal margin. Gate charge of 81nC is moderate. Reverse recovery time of 103ns is higher than other substitutes. This part is recommended for applications prioritizing conduction efficiency and thermal performance.

STGB19NC60HDT4 (STMicroelectronics, Active Status): This PowerMESH™ IGBT provides the highest collector current at 40A, offering maximum current margin. Gate charge of 53nC is the lowest among all substitutes, minimizing driver requirements. Switching energy is reduced (85µJ on, 189µJ off). Operating temperature range matches the main part. This part is recommended for applications requiring maximum current capacity and optimized switching characteristics.

Secondary Substitute (Lower Current Rating):

STGB14NC60KDT4 (STMicroelectronics, Active Status): This PowerMESH™ IGBT provides 25A collector current, which is below the main part specification of 28A. This part is suitable only for applications where the actual operating current does not exceed 25A. Gate charge of 34.4nC is the lowest among all parts. Switching energy is minimized (82µJ on, 155µJ off). This part is recommended only when current requirements are confirmed below 25A.

Compliance Verification:

All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the main part specifications. All parts are classified as active product status, ensuring ongoing manufacturer support and supply chain availability.

Frequently Asked Questions (FAQ)

Q1: Can the IRG4BC30KD-SPBF be directly replaced with any of these substitute parts?

A: Direct replacement is possible for all substitute parts listed except STGB14NC60KDT4. All parts share identical package specifications (TO-263-3, D2PAK) and mounting type (Surface Mount). However, circuit performance characteristics will change due to differences in switching energy, gate charge, and Vce(on) values. Gate drive circuits must be verified for compatibility with the substitute part's gate charge specification.

Q2: Which substitute part provides the best performance improvement?

A: Performance improvement depends on application requirements. STGB19NC60KDT4 and STGB19NC60HDT4 offer the lowest switching energy and gate charge, resulting in faster switching transitions and reduced driver stress. STGB15H60DF and IKB15N60TATMA1 offer the lowest Vce(on) values, resulting in improved conduction efficiency and reduced heat dissipation. Selection should be based on whether the application prioritizes switching speed or conduction efficiency.

Q3: What is the significance of gate charge differences among substitute parts?

A: Gate charge directly affects the gate drive circuit requirements. The main part IRG4BC30KD-SPBF has a gate charge of 67nC. Substitute parts range from 34.4nC (STGB14NC60KDT4) to 87nC (IKB15N60TATMA1). Lower gate charge reduces driver current requirements and switching losses. Higher gate charge increases driver stress. Gate drive circuits designed for the main part may require adjustment when substituting parts with significantly different gate charge values.

Q4: Are there temperature range considerations for substitution?

A: The main part operates from -55°C to 150°C. IKB15N60TATMA1 and STGB15H60DF extend the upper temperature limit to 175°C, providing additional thermal margin. STGB19NC60KDT4, STGB14NC60KDT4, and STGB19NC60HDT4 maintain the same temperature range as the main part. Applications operating near the upper temperature limit may benefit from substitutes with extended temperature ranges.

Q5: What is the difference between standard IGBT and Trench Field Stop IGBT types?

A: The main part IRG4BC30KD-SPBF is a standard IGBT type. Substitute parts IKB15N60TATMA1 and STGB15H60DF are Trench Field Stop IGBTs, which feature improved switching characteristics and lower Vce(on) values. Trench Field Stop technology reduces switching energy and improves overall efficiency. These parts are direct functional replacements but offer enhanced performance characteristics.

Q6: Can STGB14NC60KDT4 be used as a substitute if the application current is lower than 28A?

A: STGB14NC60KDT4 provides 25A collector current, which is below the main part specification. This part can be used only if the actual operating current in the application does not exceed 25A. Circuit design must be verified to confirm that peak and pulsed currents remain within the 25A limit. This part is not recommended for applications where current margin is required.

Q7: How do switching energy differences affect circuit design?

A: The main part has switching energy of 600µJ (on) and 580µJ (off). Substitute parts have significantly lower switching energy values, ranging from 82µJ to 570µJ. Lower switching energy results in reduced switching losses, lower heat dissipation, and improved efficiency. Thermal design calculations should be updated when substituting parts with different switching energy specifications. Gate drive timing may also require adjustment due to changes in switching speed.

Q8: Are all substitute parts available in the same packaging options?

A: All substitute parts are specified in TO-263-3, D2PAK surface mount packaging, matching the main part. However, packaging options (Tape & Reel vs. Cut Tape) differ among suppliers. IKB15N60TATMA1 and STGB15H60DF are supplied in Tape & Reel format. STGB19NC60KDT4, STGB14NC60KDT4, and STGB19NC60HDT4 are supplied in Cut Tape & Digi-Reel® format. Procurement requirements should specify the required packaging format.

Q9: What compliance certifications apply to all substitute parts?

A: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the main part specifications. All parts are classified as EAR99 for export control purposes and use HTSUS code 8541.29.0095. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage and assembly.

Q10: Which substitute part is recommended for new design applications?

A: For new design applications, STGB19NC60HDT4 is recommended due to its active product status, highest current rating (40A), lowest gate charge (53nC), and optimized switching characteristics. This part provides maximum design margin and performance optimization. IKB15N60TATMA1 is recommended if Infineon product line continuity is required. Both parts are actively supported by their respective manufacturers and ensure long-term supply chain reliability.

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