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IRG4BC30F-S IGBT Equivalent & Substitute Parts
Part Overview
The IRG4BC30F-S is a 600V, 31A IGBT manufactured by Infineon Technologies in D2PAK surface mount packaging. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and production continuity. The IRG4BC30F-S operates at maximum power dissipation of 100W with collector-emitter breakdown voltage of 600V and maximum collector current of 31A, making it suitable for medium-power switching applications in industrial and consumer electronics.
Due to its obsolete status, sourcing new inventory from original manufacturers is restricted. Equivalent substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal parameters while utilizing compatible packaging standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 31 | A |
| Current - Collector Pulsed (Icm) | 120 | A |
| Power - Max | 100 | W |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | V |
| Gate Charge | 51 | nC |
| Switching Energy (on/off) | 230µJ / 1.18mJ | µJ / mJ |
| Td (on/off) @ 25°C | 21ns / 200ns | ns |
| Package / Case | TO-263-3, D2PAK | - |
| Mounting Type | Surface Mount | - |
| Product Status | Obsolete | - |
Substitute Part Grouping Explanation
Substitution of the IRG4BC30F-S is determined by strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:
Voltage Rating: Substitute parts must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology and voltage stress conditions.
Current Rating: Substitute parts must support minimum 30A continuous collector current. The IRG4BC30F-S specifies 31A maximum; substitutes rated at 30A or higher satisfy this requirement.
Power Dissipation: Substitute parts must support minimum 100W power rating to handle equivalent thermal loads in the application circuit.
Package Compatibility: Substitute parts must utilize TO-263-3 (D2PAK) surface mount packaging with identical pinout and thermal characteristics to ensure direct PCB compatibility without layout modifications.
Input Type: Substitute parts must feature standard gate drive input type, compatible with existing gate drive circuitry.
Mounting Type: Substitute parts must be surface mount technology to maintain manufacturing process compatibility.
The STGB15H60DF from STMicroelectronics meets all substitution criteria within these defined parameters.
Parameter Comparison
| Parameter | IRG4BC30F-S (Infineon) | STGB15H60DF (STMicroelectronics) | Compatibility |
|---|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | Compatible |
| Current - Collector (Ic) (Max) | 31 A | 30 A | Compatible |
| Current - Collector Pulsed (Icm) | 120 A | 60 A | Substitute rated lower |
| Power - Max | 100 W | 115 W | Compatible |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | 2V @ 15V, 15A | Substitute higher |
| Gate Charge | 51 nC | 81 nC | Substitute higher |
| Switching Energy (on) | 230 µJ | 136 µJ | Substitute lower |
| Switching Energy (off) | 1.18 mJ | 207 µJ | Substitute lower |
| Td (on/off) @ 25°C | 21ns / 200ns | 24.5ns / 118ns | Substitute comparable |
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | Compatible |
| Mounting Type | Surface Mount | Surface Mount | Compatible |
| Input Type | Standard | Standard | Compatible |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | Substitute compliant |
| Product Status | Obsolete | Active | Substitute active |
Engineering Selection Recommendations
Primary Substitute: STGB15H60DF (STMicroelectronics)
The STGB15H60DF qualifies as the primary substitute for the IRG4BC30F-S based on the following engineering criteria:
Electrical Compatibility: Both devices maintain identical 600V collector-emitter breakdown voltage and comparable continuous collector current ratings (30A vs. 31A). The STGB15H60DF achieves higher maximum power dissipation (115W vs. 100W), providing thermal margin in equivalent applications.
Package Compatibility: Both devices utilize TO-263-3 (D2PAK) surface mount packaging with identical pinout configuration, enabling direct PCB substitution without layout modifications.
Product Status: The STGB15H60DF maintains active product status with current manufacturing availability, resolving supply chain constraints associated with the obsolete IRG4BC30F-S.
Compliance Status: The STGB15H60DF is ROHS3 compliant, meeting current environmental and regulatory requirements. The IRG4BC30F-S is RoHS non-compliant, making the substitute preferable for new designs subject to RoHS regulations.
Switching Characteristics: The STGB15H60DF incorporates Trench Field Stop technology, delivering lower switching energy losses (136µJ on, 207µJ off) compared to the IRG4BC30F-S (230µJ on, 1.18mJ off). This results in reduced power dissipation and improved thermal performance in switching applications.
Gate Drive Considerations: The STGB15H60DF specifies higher gate charge (81nC vs. 51nC), requiring verification that existing gate drive circuitry can supply adequate charge within specified timing parameters. Gate drive voltage remains compatible at 15V.
Frequently Asked Questions (FAQ)
Q: Can the STGB15H60DF directly replace the IRG4BC30F-S without PCB modifications?
A: Yes. Both devices utilize identical TO-263-3 (D2PAK) surface mount packaging with matching pinout configuration. Direct PCB substitution is possible without layout changes. However, gate drive circuit verification is required due to higher gate charge specification.
Q: What is the significance of the lower pulsed collector current rating in the STGB15H60DF?
A: The STGB15H60DF specifies 60A pulsed current versus 120A for the IRG4BC30F-S. This parameter defines maximum transient current capability during switching events. Application circuits must be evaluated to confirm that peak transient currents remain within the 60A limit. Most industrial switching applications operate within this specification.
Q: How does the higher Vce(on) of the STGB15H60DF affect circuit performance?
A: The STGB15H60DF specifies 2V Vce(on) at 15A versus 1.8V for the IRG4BC30F-S. This 0.2V difference increases on-state power dissipation proportionally to collector current. For 17A operation, additional dissipation is approximately 3.4W. Thermal design must accommodate this increase or operate at reduced current levels.
Q: Is gate drive circuit modification necessary for the STGB15H60DF?
A: Gate charge increases from 51nC to 81nC, requiring 58% more charge per switching cycle. Existing gate drive circuits must be evaluated to confirm adequate charge supply capability within specified switching time parameters. Most modern gate drivers accommodate this specification range without modification.
Q: What are the advantages of the STGB15H60DF Trench Field Stop technology?
A: Trench Field Stop technology reduces switching energy losses significantly (136µJ on vs. 230µJ on; 207µJ off vs. 1.18mJ off). This results in lower power dissipation, reduced thermal stress, and improved efficiency in switching applications. The technology also provides faster switching transitions (118ns off vs. 200ns off).
Q: Are there any compliance or regulatory differences between these devices?
A: The STGB15H60DF is ROHS3 compliant, meeting current environmental regulations. The IRG4BC30F-S is RoHS non-compliant. For new designs or applications subject to RoHS requirements, the STGB15H60DF is the required choice.
Q: What is the inventory status for the STGB15H60DF?
A: The STGB15H60DF maintains active product status with 1308 pieces available in new original condition. The IRG4BC30F-S is obsolete with limited remaining inventory (9900 pieces). The STGB15H60DF ensures long-term supply chain continuity.
Q: Can the STGB15H60DF be used in applications originally designed for the IRG4BC30F-S?
A: Yes, with circuit verification. Electrical parameters are compatible within defined operating ranges. However, gate drive circuit capability and thermal design must be confirmed to accommodate the higher gate charge and Vce(on) specifications. Application-specific testing is recommended for critical systems.
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