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IRG4BC30FDPBF IGBT 600V 31A Equivalent & Substitute Parts
Part Overview
The IRG4BC30FDPBF is a 600V, 31A IGBT manufactured by Infineon Technologies in TO-220AB package configuration. This device is classified as obsolete product status, necessitating identification of equivalent substitute components for ongoing design requirements and procurement needs. The part operates across a junction temperature range of -55°C to 150°C and is rated for 100W maximum power dissipation. Obsolete status requires engineers to evaluate active alternative components that maintain electrical and mechanical compatibility within the same application envelope.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 31 | A |
| Current - Collector Pulsed (Icm) | 124 | A |
| Power - Max | 100 | W |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | V |
| Gate Charge | 51 | nC |
| Switching Energy (on/off) | 630µJ / 1.39mJ | µJ / mJ |
| Td (on/off) @ 25°C | 42ns / 230ns | ns |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-220-3 | - |
| Mounting Type | Through Hole | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution eligibility for the IRG4BC30FDPBF is determined by the following critical parameters:
Voltage Rating: All substitute parts must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology.
Current Rating: Substitute parts must support continuous collector current (Ic) within the range of 30A to 32A. The IRG4BC30FDPBF operates at 31A maximum; substitutes rated between 30A and 32A maintain functional equivalence.
Package Configuration: All substitutes must use TO-220-3 through-hole package to ensure mechanical compatibility with existing PCB layouts and thermal management solutions.
Operating Temperature Range: Substitute parts must support minimum junction temperature of -55°C and maximum of 150°C to maintain thermal envelope compatibility.
Input Type: All substitutes must feature standard input type gate drive configuration.
Compliance: All substitutes must maintain ROHS3 compliance and EAR99 ECCN classification.
The three identified substitute parts meet these criteria while offering active product status and improved or equivalent electrical performance characteristics.
Parameter Comparison
| Parameter | IRG4BC30FDPBF (Main) | IKP15N60TXKSA1 | IXDP20N60B | STGP14NC60KD |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | IXYS | STMicroelectronics |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 600 V |
| Current - Collector (Ic) (Max) | 31 A | 30 A | 32 A | 25 A |
| Current - Collector Pulsed (Icm) | 124 A | 45 A | 40 A | 50 A |
| Power - Max | 100 W | 130 W | 140 W | 80 W |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | 2.05V @ 15V, 15A | 2.8V @ 15V, 20A | 2.5V @ 15V, 7A |
| Gate Charge | 51 nC | 87 nC | 70 nC | 34.4 nC |
| Switching Energy (on/off) | 630µJ / 1.39mJ | 570µJ / - | 900µJ / 400µJ | 82µJ / 155µJ |
| Td (on/off) @ 25°C | 42ns / 230ns | 17ns / 188ns | - / - | 22.5ns / 116ns |
| Operating Temperature Range | -55 to 150°C (TJ) | -40 to 175°C (TJ) | -55 to 150°C (TJ) | -55 to 150°C (TJ) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IKP15N60TXKSA1 (Infineon Technologies - TrenchStop® Series)
This substitute maintains 600V voltage rating and 30A continuous current rating, providing direct functional equivalence to the IRG4BC30FDPBF. Active product status ensures long-term availability and supply chain stability. The device offers improved switching performance with reduced turn-on delay (17ns versus 42ns) and lower turn-off delay (188ns versus 230ns). Power rating increases to 130W, providing thermal margin. Operating temperature range extends to 175°C maximum junction temperature. ROHS3 compliance and EAR99 classification maintained. Gate charge increases to 87nC, requiring gate drive circuit evaluation for switching frequency applications.
IXDP20N60B (IXYS - NPT Type)
This substitute provides 600V voltage rating and 32A continuous current rating, exceeding the IRG4BC30FDPBF specification. Active product status ensures procurement availability. Power rating increases to 140W. Operating temperature range matches the original part (-55°C to 150°C). ROHS3 compliance and EAR99 classification maintained. Vce(on) increases to 2.8V at 15V, 20A test condition, indicating higher conduction losses. Gate charge of 70nC falls between the main part and IKP15N60TXKSA1. Switching energy data provided for both on and off transitions (900µJ on, 400µJ off).
STGP14NC60KD (STMicroelectronics - PowerMESH™ Series)
This substitute maintains 600V voltage rating but operates at 25A continuous current rating, below the IRG4BC30FDPBF specification. Active product status ensures availability. Power rating of 80W is lower than the original part, limiting thermal headroom. Operating temperature range matches the original part (-55°C to 150°C). ROHS3 compliance and EAR99 classification maintained. Gate charge of 34.4nC is the lowest among substitutes, reducing gate drive power requirements. Switching energy is minimal (82µJ on, 155µJ off), indicating efficient switching characteristics. This part is suitable only for applications where 25A continuous current is sufficient.
Frequently Asked Questions (FAQ)
Q: Can the IKP15N60TXKSA1 directly replace the IRG4BC30FDPBF without circuit modifications?
A: The IKP15N60TXKSA1 maintains identical voltage rating (600V), equivalent current rating (30A versus 31A), and identical TO-220-3 package configuration. However, gate charge increases from 51nC to 87nC. Gate drive circuits operating at high switching frequencies must be evaluated to confirm adequate drive capability. Thermal design may benefit from the increased power rating (130W versus 100W).
Q: What is the primary difference between the IXDP20N60B and IKP15N60TXKSA1?
A: Both maintain 600V voltage rating and TO-220-3 package. The IXDP20N60B offers higher continuous current (32A) and power rating (140W) but exhibits higher Vce(on) (2.8V) and higher switching energy (900µJ on). The IKP15N60TXKSA1 features lower Vce(on) (2.05V) and lower on-state switching energy (570µJ), resulting in lower conduction and switching losses. Manufacturer selection depends on thermal management strategy and switching frequency requirements.
Q: Is the STGP14NC60KD suitable as a substitute for the IRG4BC30FDPBF?
A: The STGP14NC60KD maintains 600V voltage rating and TO-220-3 package but operates at 25A continuous current, which is 6A below the IRG4BC30FDPBF specification. This part is suitable only for applications where the actual operating current does not exceed 25A. Power rating of 80W is also lower than the original part. Gate charge of 34.4nC is advantageous for high-frequency switching applications.
Q: Do all substitute parts maintain the same operating temperature range?
A: The IKP15N60TXKSA1 extends the maximum junction temperature to 175°C, compared to 150°C for the IRG4BC30FDPBF, IXDP20N60B, and STGP14NC60KD. The minimum temperature of -40°C for IKP15N60TXKSA1 is higher than -55°C for other parts. Applications requiring operation below -40°C must use IXDP20N60B or STGP14NC60KD.
Q: What compliance certifications are maintained across all substitute parts?
A: All substitute parts maintain ROHS3 compliance and EAR99 ECCN classification, matching the original IRG4BC30FDPBF. Moisture sensitivity level remains at MSL 1 (Unlimited) for all parts. REACH status is unaffected for all components.
Q: How does gate charge affect gate drive circuit design?
A: The IRG4BC30FDPBF specifies 51nC gate charge. The IKP15N60TXKSA1 requires 87nC (71% increase), IXDP20N60B requires 70nC (37% increase), and STGP14NC60KD requires 34.4nC (33% decrease). Higher gate charge increases gate drive power dissipation and may require gate resistor adjustment. Lower gate charge reduces drive power but may increase switching noise. Gate drive circuits must be verified for adequate current sourcing capability.
Q: Are there thermal management differences between substitute parts?
A: The IKP15N60TXKSA1 and IXDP20N60B offer higher power ratings (130W and 140W respectively) compared to the IRG4BC30FDPBF (100W) and STGP14NC60KD (80W). Higher power ratings provide thermal margin in applications with marginal heat dissipation. Vce(on) values differ significantly: IRG4BC30FDPBF at 1.8V, IKP15N60TXKSA1 at 2.05V, IXDP20N60B at 2.8V, and STGP14NC60KD at 2.5V. Lower Vce(on) reduces conduction losses and heat generation.
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