IRG4BC30FD1 Equivalent & Substitute Parts

Part Overview

The IRG4BC30FD1 is a 600V, 31A IGBT manufactured by Infineon Technologies in TO-220AB packaging. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing applications. The part operates across a temperature range of -55°C to 150°C and is rated for 100W maximum power dissipation. Due to its obsolete status, sourcing active alternatives with compatible electrical and mechanical specifications is essential for system continuity.

Substiute Parts

IRG4BC30FD1
Infineon TechnologiesIn Stock: 2345IRG4BC30FD1 Datasheet
IRG4BC30FD1
Current Part
IXDP20N60B
IXYSIn Stock: 855IXDP20N60B Datasheet
IXDP20N60B
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 31 A
Current - Collector Pulsed (Icm) 120 A
Power - Max 100 W
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A V
Gate Charge 57 nC
Td (on/off) @ 25°C 22/250 ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-220-3 -
Mounting Type Through Hole -

Substitute Part Grouping Explanation

Substitution of the IRG4BC30FD1 is determined by the following critical parameters:

Voltage Rating: The substitute must maintain 600V collector-emitter breakdown voltage to ensure operation within the same voltage class.

Current Rating: The substitute current rating (Ic Max) must equal or exceed 31A to support the original application current requirements.

Power Dissipation: The substitute power rating must be sufficient for the thermal environment of the application.

Package Type: The substitute must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: The substitute must support the -55°C to 150°C junction temperature range.

Input Type: The substitute must use Standard input type to maintain gate drive compatibility.

The IXDP20N60B meets these substitution criteria with a 600V rating, 32A collector current, 140W power rating, and identical TO-220-3 packaging.

Parameter Comparison

Parameter IRG4BC30FD1 (Main) IXDP20N60B (Substitute) Unit
Manufacturer Infineon Technologies IXYS -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 31 32 A
Power - Max 100 140 W
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A 2.8V @ 15V, 20A V
Gate Charge 57 70 nC
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case TO-220-3 TO-220-3 -
Mounting Type Through Hole Through Hole -
Input Type Standard Standard -
Product Status Obsolete Active -
RoHS Status RoHS non-compliant ROHS3 Compliant -

Engineering Selection Recommendations

The IXDP20N60B is a direct substitute for the obsolete IRG4BC30FD1 based on the following engineering criteria:

Electrical Compatibility: Both devices operate at 600V with collector current ratings within 3% of each other (31A vs 32A). The IXDP20N60B provides 40% higher power dissipation capability (140W vs 100W), offering improved thermal margin in the application.

Mechanical Compatibility: Both parts use identical TO-220-3 through-hole packaging, ensuring direct PCB footprint compatibility without layout modifications.

Temperature Range: Both devices support the full -55°C to 150°C operating range, maintaining thermal performance specifications.

Compliance Status: The IXDP20N60B is ROHS3 compliant and carries active product status, ensuring long-term availability and regulatory compliance. The original IRG4BC30FD1 is RoHS non-compliant and obsolete.

Gate Drive Compatibility: Both devices use Standard input type with similar gate charge characteristics (57nC vs 70nC), allowing existing gate drive circuits to function without modification.

Frequently Asked Questions (FAQ)

Q: Can the IXDP20N60B directly replace the IRG4BC30FD1 without PCB modifications?

A: Yes. Both devices use TO-220-3 through-hole packaging with identical pin configuration and mechanical dimensions. No PCB layout changes are required.

Q: What is the significance of the higher Vce(on) value in the IXDP20N60B?

A: The IXDP20N60B exhibits 2.8V Vce(on) at 20A compared to 1.8V at 17A for the IRG4BC30FD1. This represents different test conditions. The higher power rating (140W vs 100W) of the IXDP20N60B compensates for this characteristic, maintaining thermal performance in the application.

Q: Does the higher gate charge of the IXDP20N60B affect gate drive circuit design?

A: The gate charge difference (70nC vs 57nC) is 23% higher. Existing gate drive circuits designed for the IRG4BC30FD1 will function with the IXDP20N60B. Gate drive timing may shift slightly, but Standard input type compatibility ensures proper operation.

Q: Why is RoHS compliance important for this substitution?

A: The IXDP20N60B is ROHS3 compliant while the IRG4BC30FD1 is non-compliant. For applications subject to RoHS regulations or requiring long-term component availability, the IXDP20N60B ensures regulatory compliance and supply chain continuity.

Q: Are there any current rating limitations when substituting?

A: No. The IXDP20N60B collector current rating (32A) exceeds the IRG4BC30FD1 requirement (31A), providing 3% additional current capacity. This ensures the substitute handles the original application current without derating.

Q: What is the NPT designation on the IXDP20N60B?

A: NPT refers to the IGBT technology type used by IXYS. This designation does not affect substitution compatibility, as both devices operate within the same voltage and current specifications required by the application.

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