IRG4BC20S IGBT Equivalent & Substitute Parts

Part Overview

The IRG4BC20S is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage with a maximum collector current of 19A and 60W power dissipation. This device features a Through Hole TO-220AB package configuration and operates across a temperature range of -55°C to 150°C.

The IRG4BC20S is classified as an obsolete product. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRG4BC20S

Infineon TechnologiesIn Stock: 1527IRG4BC20S Datasheet

Current PartRFQ

STGP10NB60S

STMicroelectronicsIn Stock: 1415STGP10NB60S Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRG4BC20S is determined by the following critical parameters:

Voltage Rating: The substitute part must maintain a Collector-Emitter Breakdown Voltage (BVCES) of 600V to ensure equivalent voltage stress capability.

Current Rating: The substitute part must support a minimum Collector Current (Ic) rating equal to or exceeding 19A to handle the same load conditions.

Power Dissipation: The substitute part must be rated for power dissipation equal to or greater than 60W.

Package Configuration: The substitute part must utilize the TO-220-3 Through Hole package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Operating Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C (TJ).

Input Type: The substitute part must feature Standard input type configuration.

The STGP10NB60S from STMicroelectronics meets all substitution criteria and is classified as an active product with current manufacturing support.

Parameter Comparison

Engineering Selection Recommendations

The STGP10NB60S is a direct functional substitute for the IRG4BC20S based on the following engineering criteria:

Voltage and Current Ratings: The STGP10NB60S maintains the 600V Collector-Emitter Breakdown Voltage rating and exceeds the current handling capability with a 29A maximum collector current versus the IRG4BC20S 19A rating. This provides additional design margin for current-limited applications.

Power Dissipation: The 80W power rating of the STGP10NB60S exceeds the 60W specification of the IRG4BC20S, ensuring adequate thermal headroom in equivalent thermal management configurations.

Package Compatibility: Both devices utilize the TO-220-3 Through Hole package, ensuring direct mechanical and thermal interface compatibility with existing PCB designs and heatsink assemblies.

Temperature Operating Range: Both devices support the identical -55°C to 150°C junction temperature range, maintaining thermal performance specifications across the full application operating envelope.

Product Status and Compliance: The IRG4BC20S is obsolete with no active manufacturing support. The STGP10NB60S is an active product with current production availability. The STGP10NB60S is ROHS3 compliant, whereas the IRG4BC20S is RoHS non-compliant, providing regulatory compliance advantages for new designs and ongoing production.

Switching Characteristics: The STGP10NB60S exhibits higher gate charge (33nC versus 27nC) and longer switching times (700ns/1.2µs versus 27ns/540ns). Applications with stringent switching frequency or EMI requirements must evaluate these differences against specific circuit design parameters.

Frequently Asked Questions (FAQ)

Q: Can the STGP10NB60S directly replace the IRG4BC20S in existing designs without PCB modifications?

A: Yes. Both devices utilize the TO-220-3 Through Hole package with identical pin configurations and mechanical dimensions. No PCB layout modifications are required for mechanical and electrical interface compatibility.

Q: What are the key differences between these two IGBTs?

A: The primary differences are: (1) Current rating: STGP10NB60S is rated for 29A versus IRG4BC20S 19A; (2) Power dissipation: STGP10NB60S is rated for 80W versus IRG4BC20S 60W; (3) Switching characteristics: STGP10NB60S has higher gate charge and longer switching times; (4) Product status: STGP10NB60S is active production while IRG4BC20S is obsolete; (5) Compliance: STGP10NB60S is ROHS3 compliant while IRG4BC20S is non-compliant.

Q: Are there thermal management considerations when substituting the STGP10NB60S for the IRG4BC20S?

A: Both devices operate across the identical -55°C to 150°C junction temperature range. The STGP10NB60S higher power rating (80W versus 60W) provides additional thermal margin. Existing heatsink and thermal interface materials designed for the IRG4BC20S remain suitable for the STGP10NB60S.

Q: How do switching characteristics affect circuit performance?

A: The STGP10NB60S exhibits higher gate charge (33nC versus 27nC) and longer switching times (700ns/1.2µs versus 27ns/540ns). Applications operating at high switching frequencies or with tight EMI specifications must evaluate these parameters against circuit design requirements. Lower switching speed may reduce switching losses in lower frequency applications.

Q: Is the STGP10NB60S suitable for applications originally designed for the IRG4BC20S?

A: The STGP10NB60S is suitable for applications where the original IRG4BC20S current and power ratings are not exceeded. The higher ratings of the STGP10NB60S provide design margin. Applications requiring the specific switching speed characteristics of the IRG4BC20S must evaluate the switching time differences.

Q: What is the availability status of these parts?

A: The IRG4BC20S is obsolete with no active manufacturing. The STGP10NB60S is an active product with current production availability and established supply chain support.