IRFZ48ZPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 61A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The IRFZ48ZPBF operates across a temperature range of -55°C to 175°C and delivers 91W maximum power dissipation at the case temperature.

Substiute Parts

IRFZ48ZPBF
Infineon TechnologiesIn Stock: 2338IRFZ48ZPBF Datasheet
IRFZ48ZPBF
Current Part
HUF75332P3
onsemiIn Stock: 9356HUF75332P3 Datasheet
HUF75332P3
MFR Recommended
HUF75339P3
onsemiIn Stock: 28331HUF75339P3 Datasheet
HUF75339P3
MFR Recommended
HUF75344P3
onsemiIn Stock: 21987HUF75344P3 Datasheet
HUF75344P3
MFR Recommended
IRFZ48PBF
Vishay SiliconixIn Stock: 2040IRFZ48PBF Datasheet
IRFZ48PBF
MFR Recommended
IRFZ48RPBF
Vishay SiliconixIn Stock: 2074IRFZ48RPBF Datasheet
IRFZ48RPBF
MFR Recommended
PHP191NQ06LT,127
Nexperia USA Inc.In Stock: 3002PHP191NQ06LT,127 Datasheet
PHP191NQ06LT,127
MFR Recommended
STP55NF06
STMicroelectronicsIn Stock: 155444STP55NF06 Datasheet
STP55NF06
MFR Recommended
STP76NF75
STMicroelectronicsIn Stock: 1494STP76NF75 Datasheet
STP76NF75
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 61 A
On-Resistance (Rds On) @ 37A, 10V 11 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 64 nC
Input Capacitance (Ciss) @ 25V 1720 pF
Power Dissipation (Max) 91 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220AB
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRFZ48ZPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Minimum 55V
  • Continuous Drain Current (Id): Minimum 61A at 25°C
  • Gate Threshold Voltage (Vgs(th)): 4V at 250µA
  • Maximum Gate Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-220 series through-hole mounting

Secondary Compatibility Factors:

  • On-Resistance (Rds On): Lower values indicate improved performance
  • Power Dissipation: Higher ratings provide thermal margin
  • Gate Charge (Qg): Affects switching speed and drive requirements
  • Input Capacitance (Ciss): Influences gate drive circuit design

Substitute parts are grouped into two categories: direct replacements meeting or exceeding all primary criteria, and enhanced alternatives offering superior electrical performance while maintaining full compatibility.

Parameter Comparison

Parameter IRFZ48ZPBF HUF75332P3 HUF75339P3 HUF75344P3 IRFZ48PBF IRFZ48RPBF PHP191NQ06LT,127 STP55NF06 STP76NF75
Vdss (V) 55 55 55 55 60 60 55 60 75
Id @ 25°C (A) 61 60 75 75 50 50 75 50 80
Rds On (mOhm) 11 @ 37A 19 @ 60A 12 @ 75A 8 @ 75A 18 @ 43A 18 @ 43A 3.7 @ 25A 18 @ 27.5A 11 @ 40A
Vgs(th) @ 250µA (V) 4 4 4 4 4 4 2 4 4
Qg (nC) 64 @ 10V 85 @ 20V 130 @ 20V 210 @ 20V 110 @ 10V 110 @ 10V 95.6 @ 5V 60 @ 10V 160 @ 10V
Ciss (pF) 1720 @ 25V 1300 @ 25V 2000 @ 25V 3200 @ 25V 2400 @ 25V 2400 @ 25V 7665 @ 25V 1300 @ 25V 3700 @ 25V
Power Dissipation (W) 91 145 200 285 190 190 300 110 300
Vgs (Max) (V) ±20 ±20 ±20 ±20 ±20 ±20 ±15 ±20 ±20
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220AB TO-220-3 TO-220-3 TO-220-3 TO-220AB TO-220AB TO-220AB TO-220 TO-220
Product Status Obsolete Active Active Active Active Active Obsolete Active Active
RoHS Compliance Not Specified ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

Direct Substitutes (Equivalent Performance):

HUF75332P3 (onsemi) provides equivalent electrical performance with 55V Vdss and 60A continuous drain current, meeting the primary substitution criteria. This part carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. The TO-220-3 package is mechanically compatible with TO-220AB footprints in standard through-hole applications.

Enhanced Substitutes (Superior Performance):

HUF75344P3 (onsemi) exceeds the IRFZ48ZPBF specifications with 75A continuous drain current, 8mOhm on-resistance, and 285W power dissipation. This part maintains 55V Vdss and full temperature range compatibility while offering improved thermal performance. Active product status and ROHS3 compliance support production continuity.

STP55NF06 (STMicroelectronics) provides equivalent current handling at 50A with 60V Vdss and Active product status. This part features lower gate charge (60nC) compared to the IRFZ48ZPBF, reducing gate drive circuit complexity. ROHS3 compliance and high inventory availability (155,400 units) support immediate procurement.

STP76NF75 (STMicroelectronics) offers enhanced current capacity at 80A with 75V Vdss and 300W power dissipation. This part maintains Active product status and ROHS3 compliance, suitable for applications requiring higher current margins or elevated voltage operation.

Compatibility Notes:

IRFZ48PBF and IRFZ48RPBF (Vishay Siliconix) are functionally equivalent to the IRFZ48ZPBF with identical electrical specifications but operate at 60V Vdss. These parts carry Active product status and ROHS3 compliance, providing direct alternatives from the same manufacturer family.

PHP191NQ06LT,127 (Nexperia) is classified as Obsolete and carries a maximum gate voltage limit of ±15V, which differs from the ±20V specification of the IRFZ48ZPBF. This part is not recommended for new designs despite superior on-resistance characteristics.

Frequently Asked Questions (FAQ)

Q: Can HUF75332P3 directly replace IRFZ48ZPBF in existing designs?

A: Yes. HUF75332P3 meets all primary substitution criteria with 55V Vdss, 60A continuous drain current, and compatible TO-220-3 package. The electrical specifications align with IRFZ48ZPBF requirements, and the part carries Active product status with ROHS3 compliance.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both packages are through-hole TO-220 variants with identical pin configurations and mechanical footprints. TO-220AB and TO-220-3 designations refer to the same physical package used in standard PCB applications. Substitution between these designations is mechanically compatible.

Q: Why does HUF75344P3 have higher gate charge than IRFZ48ZPBF?

A: Gate charge (Qg) increases with die size and current capacity. HUF75344P3 is rated for 75A continuous current compared to IRFZ48ZPBF at 61A, resulting in higher gate charge (210nC vs. 64nC). Gate drive circuits must supply sufficient charge to fully enhance the device; higher gate charge requires proportionally higher drive current or longer switching times.

Q: Is STP55NF06 suitable for applications requiring 61A continuous current?

A: STP55NF06 is rated for 50A continuous drain current, which is below the IRFZ48ZPBF specification of 61A. This part is not suitable for applications requiring the full 61A rating. HUF75339P3 or HUF75344P3 are recommended for maintaining or exceeding the original current specification.

Q: What is the impact of lower on-resistance in substitute parts?

A: Lower on-resistance (Rds On) reduces conduction losses and heat generation during device operation. PHP191NQ06LT,127 exhibits 3.7mOhm on-resistance compared to IRFZ48ZPBF at 11mOhm, resulting in lower power dissipation and improved thermal performance. However, this part is Obsolete and carries a ±15V gate voltage limit, limiting its suitability for new designs.

Q: Are all substitute parts ROHS3 compliant?

A: All Active substitute parts listed (HUF75332P3, HUF75339P3, HUF75344P3, IRFZ48PBF, IRFZ48RPBF, STP55NF06, STP76NF75) carry ROHS3 compliance certification. PHP191NQ06LT,127 is also ROHS3 compliant but carries Obsolete product status. The original IRFZ48ZPBF does not specify RoHS compliance status.

Q: Which substitute part offers the best thermal performance?

A: HUF75344P3 and STP76NF75 both deliver 300W maximum power dissipation, the highest among all listed substitutes. HUF75344P3 combines this with 8mOhm on-resistance and 55V Vdss matching the original specification. STP76NF75 operates at 75V Vdss with 80A current capacity, suitable for applications requiring higher voltage margins.

Q: Can substitute parts with higher Vdss ratings be used in 55V applications?

A: Yes. Devices rated for higher drain-to-source voltage (such as STP76NF75 at 75V) operate safely in lower voltage applications. The higher voltage rating provides additional design margin and does not degrade performance in 55V circuits. Gate threshold voltage, on-resistance, and other electrical characteristics remain within acceptable operating ranges.

Q: What inventory considerations apply to substitute selection?

A: STP55NF06 maintains the highest inventory availability at 155,400 units, supporting immediate procurement for high-volume applications. HUF75339P3 and HUF75344P3 offer substantial inventory (28,300 and 21,910 units respectively), ensuring supply continuity. IRFZ48ZPBF inventory is limited to 2,277 units due to Obsolete status, making substitution necessary for ongoing production.

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