IRFZ48Z N-Channel 55V 61A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 61A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making substitute parts necessary for new designs and ongoing production support. The IRFZ48Z operates across the industrial temperature range of -55°C to 175°C and is suitable for switching applications requiring moderate voltage and current ratings with through-hole mounting.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	61	A
On-State Resistance (Rds On) @ 37A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	64	nC
Power Dissipation (Max)	91	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRFZ48Z is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 61A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V nominal
Gate Drive Voltage: 10V standard drive voltage
Package Type: TO-220 family (TO-220AB or TO-220-3 acceptable)
Mounting Type: Through-hole configuration required
Operating Temperature Range: Must support -55°C to 175°C

Secondary Considerations:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Affects switching speed and drive requirements
Power Dissipation Rating: Higher ratings provide thermal margin
Product Status: Active status preferred for long-term availability
RoHS Compliance: ROHS3 compliance preferred for regulatory alignment

Substitute parts are grouped into three categories based on electrical performance relative to the IRFZ48Z baseline.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRFZ48Z	Infineon	55	61	11 @ 37A	64 @ 10V	91	TO-220AB	Obsolete
HUF75332P3	onsemi	55	60	19 @ 60A	85 @ 20V	145	TO-220-3	Active
HUF75339P3	onsemi	55	75	12 @ 75A	130 @ 20V	200	TO-220-3	Active
HUF75344P3	onsemi	55	75	8 @ 75A	210 @ 20V	285	TO-220-3	Active
IRFZ48PBF	Vishay Siliconix	60	50	18 @ 43A	110 @ 10V	190	TO-220AB	Active
IRFZ48RPBF	Vishay Siliconix	60	50	18 @ 43A	110 @ 10V	190	TO-220AB	Active
PHP191NQ06LT,127	Nexperia USA Inc.	55	75	3.7 @ 25A	95.6 @ 5V	300	TO-220AB	Obsolete
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A	60 @ 10V	110	TO-220	Active
STP76NF75	STMicroelectronics	75	80	11 @ 40A	160 @ 10V	300	TO-220	Active
STP80NF55-08	STMicroelectronics	55	80	8 @ 40A	155 @ 10V	300	TO-220	Not For New Designs

Engineering Selection Recommendations

Category 1: Direct Voltage and Current Match (55V, ≥60A)

HUF75332P3, HUF75339P3, HUF75344P3, and STP80NF55-08 maintain the 55V Vdss rating with equal or higher continuous drain current ratings. These parts are electrically compatible with the IRFZ48Z baseline. HUF75332P3 provides the closest current match at 60A. HUF75339P3 and HUF75344P3 offer increased current capacity at 75A with significantly improved power dissipation ratings (200W and 285W respectively). All onsemi UltraFET™ devices carry ROHS3 compliance and active product status, supporting long-term design continuity. STP80NF55-08 matches the voltage and exceeds current requirements but carries "Not For New Designs" status, limiting its suitability for new applications.

Category 2: Higher Voltage Rating (60V or 75V)

IRFZ48PBF, IRFZ48RPBF, and STP55NF06 operate at 60V Vdss, exceeding the IRFZ48Z specification by 5V. These devices reduce continuous drain current to 50A, which is below the IRFZ48Z rating of 61A. These parts are suitable only for applications where the 61A current requirement can be reduced or where the higher voltage margin is beneficial. IRFZ48PBF and IRFZ48RPBF maintain the TO-220AB package and carry ROHS3 compliance with active status. STP55NF06 offers the highest inventory availability (155,400 units) and active status but operates at reduced current capacity.

STP76NF75 operates at 75V Vdss with 80A continuous drain current, providing substantial margin above the IRFZ48Z specification. This device is suitable for applications requiring higher voltage headroom but introduces design changes due to increased Vdss rating.

Category 3: Obsolete Status Alternatives

PHP191NQ06LT,127 matches the 55V Vdss rating and exceeds current requirements at 75A. However, this device carries obsolete product status, limiting its use to legacy system support or inventory replacement only.

Recommended Primary Substitutes:

HUF75344P3 for applications requiring improved thermal performance and lower on-state resistance
HUF75339P3 for balanced performance and cost considerations
HUF75332P3 for closest current rating match with active product status

Frequently Asked Questions (FAQ)

Q: Can IRFZ48PBF or IRFZ48RPBF directly replace IRFZ48Z in all applications?

A: IRFZ48PBF and IRFZ48RPBF operate at 60V Vdss with 50A continuous drain current. These devices are suitable only if the application can operate with reduced current capacity (50A versus 61A). The higher voltage rating provides additional margin but does not compensate for reduced current capability. Circuit analysis is required to confirm compatibility.

Q: What is the difference between HUF75332P3, HUF75339P3, and HUF75344P3?

A: All three devices maintain 55V Vdss matching the IRFZ48Z specification. HUF75332P3 provides 60A continuous drain current with 19mOhm on-state resistance and 145W power dissipation. HUF75339P3 and HUF75344P3 both provide 75A continuous drain current. HUF75339P3 has 12mOhm on-state resistance with 200W power dissipation, while HUF75344P3 has 8mOhm on-state resistance with 285W power dissipation. Selection depends on thermal requirements and current capacity needs.

Q: Are all substitute parts RoHS compliant?

A: The onsemi UltraFET™ devices (HUF75332P3, HUF75339P3, HUF75344P3) carry ROHS3 compliance. Vishay devices (IRFZ48PBF, IRFZ48RPBF) carry ROHS3 compliance. STMicroelectronics devices (STP55NF06, STP76NF75, STP80NF55-08) carry ROHS3 compliance. The original IRFZ48Z is RoHS non-compliant. All substitute parts meet current RoHS requirements.

Q: Can STP76NF75 be used as a substitute despite its 75V rating?

A: STP76NF75 operates at 75V Vdss, which exceeds the IRFZ48Z specification of 55V. This device provides higher voltage margin but introduces design changes. The 80A continuous drain current exceeds requirements. Use is limited to applications where higher voltage rating is acceptable or beneficial. Circuit validation is required.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The IRFZ48Z has 64nC gate charge at 10V. Substitute parts range from 60nC to 210nC. Higher gate charge requires more drive current or longer switching times. Lower gate charge enables faster switching. Gate drive circuit compatibility must be verified based on the specific substitute part selected.

Q: Why is STP80NF55-08 marked "Not For New Designs"?

A: STP80NF55-08 carries "Not For New Designs" status, indicating STMicroelectronics has designated this device for legacy support only. New designs should select from active-status alternatives such as HUF75344P3, HUF75339P3, or HUF75332P3 to ensure long-term availability and support.

Q: Are TO-220AB and TO-220-3 packages mechanically interchangeable?

A: TO-220AB and TO-220-3 are both through-hole TO-220 family packages with identical pin spacing and mounting hole patterns. They are mechanically interchangeable on standard PCB layouts. Pin assignments are identical: Gate (pin 1), Drain (pin 2), Source (pin 3).

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