IRFZ48VS N-Channel 60V 72A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48VS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 72A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of functionally equivalent active alternatives for new designs and production continuity. The IRFZ48VS operates across a temperature range of -55°C to 175°C and is designed for applications requiring moderate to high current switching at 60V levels.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	72	A (Tc)
On-State Resistance (Rds On) @ 43A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFZ48VS is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 72A at 25°C
Package Type: Must be D2PAK (TO-263-3) surface mount
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
Maximum Gate Voltage (Vgs Max): Must support ±20V operation
Operating Temperature Range: Must span -55°C to 175°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 12mOhm are preferred
Gate Charge (Qg): Lower values reduce switching losses; values at or below 110nC are preferred
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into three categories based on how closely they match the IRFZ48VS specifications:

Category A - Direct Equivalents (60V, ≥72A): Parts meeting or exceeding all primary electrical specifications with identical package type.

Category B - Functional Alternatives (60V, 50-72A): Parts with slightly reduced current ratings but maintaining 60V voltage class and D2PAK packaging, suitable for applications with lower current demands.

Category C - Enhanced Alternatives (>60V, ≥72A): Parts with higher voltage ratings or current capabilities, providing design margin for demanding applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IRFZ48VS	Infineon	60	72	12 @ 43A, 10V	110 @ 10V	150	D2PAK	Obsolete
PSMN7R6-60BS,118	Nexperia	60	92	7.8 @ 25A, 10V	38.7 @ 10V	149	D2PAK	Active
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	D2PAK	Active
BUK7613-60E,118	Nexperia	60	58	13 @ 15A, 10V	22.9 @ 10V	96	D2PAK	Active
FDB13AN06A0	onsemi	60	62	13.5 @ 62A, 10V	29 @ 10V	115	D2PAK	Active
IRFZ48RSPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	110 @ 10V	190	D2PAK	Active
STB60NF06LT4	STMicroelectronics	60	60	14 @ 30A, 10V	66 @ 4.5V	110	D2PAK	Active
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	60 @ 10V	110	D2PAK	Active
PSMN015-60BS,118	Nexperia	60	50	14.8 @ 15A, 10V	20.9 @ 10V	86	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	D2PAK	Active
RSJ400N06FRATL	Rohm Semiconductor	60	40	16 @ 40A, 10V	52 @ 10V	50	D2PAK	Active

Engineering Selection Recommendations

Category A - Direct Equivalents (Recommended Primary Substitutes)

PSMN7R6-60BS,118 (Nexperia USA Inc.) is the optimal direct replacement for the IRFZ48VS. This part exceeds the original specifications with 92A continuous drain current at 60V, surpassing the 72A requirement. The on-state resistance of 7.8mOhm is significantly lower than the IRFZ48VS at 12mOhm, resulting in reduced power dissipation and improved thermal performance. Gate charge is substantially lower at 38.7nC, reducing switching losses. The device maintains D2PAK packaging and operates across -55°C to 175°C. ROHS3 compliance and AEC-Q101 automotive qualification provide design assurance for production environments.

HUF75545S3ST (onsemi) provides enhanced performance with 75A at 80V, offering voltage margin above the 60V requirement. The 10mOhm on-state resistance and 270W power dissipation capability support high-current applications. This part is suitable for designs requiring additional voltage headroom or thermal capacity. ROHS3 compliance is confirmed.

Category B - Functional Alternatives (Current-Limited Substitutes)

STB60NF06LT4 (STMicroelectronics) delivers 60A continuous current at 60V with 14mOhm on-state resistance. This part is appropriate for applications where the full 72A capability of the IRFZ48VS is not required. The STripFET™ II series technology provides proven reliability. ROHS3 compliance and -65°C to 175°C operating range extend the lower temperature limit. Gate charge of 66nC at 4.5V indicates efficient switching characteristics.

FDB13AN06A0 (onsemi) offers 62A continuous current at 60V with 13.5mOhm on-state resistance. The PowerTrench® technology and 115W power dissipation support moderate-to-high current applications. This part is suitable for designs where 62A meets application requirements. ROHS3 compliance is confirmed.

BUK7613-60E,118 (Nexperia USA Inc.) provides 58A at 60V with 13mOhm on-state resistance and AEC-Q101 automotive qualification. The TrenchMOS™ series and 96W power dissipation are appropriate for automotive and industrial applications. ROHS3 compliance is confirmed.

Category C - Enhanced Alternatives (Voltage-Margin Substitutes)

IPB50N10S3L16ATMA1 (Infineon Technologies) operates at 100V with 50A continuous current. This part is suitable for applications requiring voltage margin above 60V or where 50A current capacity is sufficient. The OptiMOS™ series provides advanced performance characteristics. ROHS3 compliance is confirmed.

Selection Criteria by Application:

High-current applications (≥72A at 60V): PSMN7R6-60BS,118 or HUF75545S3ST
Moderate-current applications (50-72A at 60V): STB60NF06LT4, FDB13AN06A0, or BUK7613-60E,118
Automotive/AEC-Q101 qualified designs: BUK7613-60E,118 or RSJ400N06FRATL
Voltage-margin designs (>60V): HUF75545S3ST or IPB50N10S3L16ATMA1
Low-power applications (<50A): PSMN015-60BS,118 or STB55NF06T4

All recommended substitutes are active products with ROHS3 compliance, ensuring long-term availability and regulatory compliance for new designs.

Frequently Asked Questions (FAQ)

Q: Can PSMN7R6-60BS,118 directly replace IRFZ48VS without circuit modifications?

A: Yes. PSMN7R6-60BS,118 meets or exceeds all primary electrical specifications of the IRFZ48VS: 60V voltage rating, 92A continuous current (exceeding 72A), D2PAK package, ±20V gate voltage support, and -55°C to 175°C operating range. The lower on-state resistance (7.8mOhm vs. 12mOhm) and reduced gate charge (38.7nC vs. 110nC) provide improved performance without requiring circuit changes.

Q: What is the difference between Category A and Category B substitutes?

A: Category A substitutes (PSMN7R6-60BS,118, HUF75545S3ST) meet or exceed the 72A continuous current specification at 60V. Category B substitutes (STB60NF06LT4, FDB13AN06A0, BUK7613-60E,118) provide 50-62A continuous current at 60V. Category B parts are suitable only for applications where the full 72A capability is not required. Verify application current requirements before selecting Category B alternatives.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are supplied in D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal compatibility with the IRFZ48VS footprint. Verify PCB layout thermal management, as some substitutes have different power dissipation ratings.

Q: Which substitute offers the best on-state resistance performance?

A: PSMN7R6-60BS,118 provides the lowest on-state resistance at 7.8mOhm (measured at 25A, 10V), compared to the IRFZ48VS at 12mOhm (measured at 43A, 10V). Lower on-state resistance reduces conduction losses and heat generation, improving overall circuit efficiency.

Q: Can I use HUF75545S3ST in a 60V circuit designed for IRFZ48VS?

A: Yes. HUF75545S3ST is rated for 80V, which exceeds the 60V requirement. The higher voltage rating provides design margin and does not create compatibility issues in 60V circuits. The 75A continuous current and 10mOhm on-state resistance offer enhanced performance. Verify thermal management, as the 270W power dissipation rating is significantly higher than the IRFZ48VS.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., PSMN7R6-60BS,118 at 38.7nC) reduces switching losses and allows faster switching speeds compared to higher gate charge devices (e.g., IRFZ48VS at 110nC). This is critical in high-frequency switching applications. Select substitutes with gate charge appropriate to your circuit's switching frequency and driver capabilities.

Q: Are automotive-qualified substitutes available?

A: Yes. BUK7613-60E,118 and RSJ400N06FRATL are both AEC-Q101 qualified for automotive applications. These parts are suitable for designs requiring automotive-grade reliability and traceability. BUK7613-60E,118 provides 58A at 60V, while RSJ400N06FRATL provides 40A at 60V.

Q: What does ROHS3 compliance mean for substitute selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active substitute parts listed are ROHS3 compliant, ensuring regulatory compliance for new designs and production. The obsolete IRFZ48VS is not ROHS3 compliant, making substitution necessary for new product development.

Q: Can I use IPB50N10S3L16ATMA1 in place of IRFZ48VS?

A: IPB50N10S3L16ATMA1 operates at 100V with 50A continuous current, which is lower than the IRFZ48VS 72A specification. This part is suitable only for applications where 50A current capacity is sufficient. The higher voltage rating (100V vs. 60V) provides voltage margin but does not compensate for the reduced current capability. Verify application current requirements before selection.

Q: How do I verify thermal compatibility when substituting MOSFETs?

A: Compare power dissipation ratings and on-state resistance values. The IRFZ48VS is rated for 150W at Tc. Substitutes with lower on-state resistance (e.g., PSMN7R6-60BS,118 at 7.8mOhm) generate less heat at the same current. Verify PCB thermal design, heatsink requirements, and thermal interface materials are adequate for the substitute's power dissipation characteristics. Consult manufacturer datasheets for thermal resistance (Rθ) specifications.

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