IRFZ48VPBF N-Channel 60V 72A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48VPBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 60V drain-to-source voltage and 72A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration with a maximum power dissipation of 150W. This part is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The IRFZ48VPBF operates across a temperature range of -55°C to 175°C (TJ) and complies with RoHS3 and REACH requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	72	A
On-State Resistance (Rds On) @ 43A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRFZ48VPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 72A
Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V nominal
Maximum Gate Voltage (Vgs Max): Must support ±20V
Package/Case: TO-220-3 or TO-220AB through-hole configuration
Operating Temperature Range: Must span -55°C to 175°C minimum
FET Type: N-Channel MOSFET technology

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance but are not mandatory for substitution
Gate Charge (Qg): Lower values reduce switching losses but do not prevent substitution
Power Dissipation: Must support thermal requirements of the application
RoHS3 and REACH compliance for regulatory alignment

Substitute parts are grouped into two categories: Direct Manufacturer Recommended (active product status, preferred for new designs) and Functional Equivalents (alternative manufacturers, may have obsolete status but meet electrical specifications).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRFZ48VPBF	Infineon	60	72	12 @ 43A	110 @ 10V	150	Obsolete	TO-220AB
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A	86 @ 10V	140	Active	TO-220AB
IRF1018EPBF	Infineon	60	79	8.4 @ 47A	69 @ 10V	110	Active	TO-220AB
RFP70N06	onsemi	60	70	14 @ 70A	156 @ 20V	150	Active	TO-220-3
IRFZ48PBF	Vishay Siliconix	60	50	18 @ 43A	110 @ 10V	190	Active	TO-220AB
IRFZ48RPBF	Vishay Siliconix	60	50	18 @ 43A	110 @ 10V	190	Active	TO-220AB
IXTP70N075T2	IXYS	75	70	12 @ 25A	46 @ 10V	150	Active	TO-220-3
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3 @ 25A	130 @ 10V	306	Obsolete	TO-220AB
PSMN4R6-60PS,127	Nexperia USA Inc.	60	100	4.6 @ 25A	70.8 @ 10V	211	Obsolete	TO-220AB
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A	60 @ 10V	110	Active	TO-220
STP60NF06	STMicroelectronics	60	60	16 @ 30A	73 @ 10V	110	Active	TO-220

Engineering Selection Recommendations

Tier 1: Manufacturer Recommended Substitutes (Active Status)

The IRF1010EZPBF and IRF1018EPBF from Infineon Technologies are the primary recommended substitutes. Both devices maintain the 60V Vdss rating and exceed the 72A continuous drain current requirement (75A and 79A respectively). These parts are in Active product status, ensuring long-term availability and supply chain stability. Both comply with RoHS3 and REACH requirements. The IRF1010EZPBF offers improved on-state resistance (8.5 mOhm) and reduced gate charge (86 nC) compared to the original IRFZ48VPBF, resulting in lower conduction and switching losses. The IRF1018EPBF provides the highest drain current rating (79A) with the lowest gate charge (69 nC) among Infineon options.

Tier 2: Alternative Manufacturer Substitutes (Active Status)

The STP60NF06 from STMicroelectronics (STripFET™ II series) meets the 60V and 60A specifications with Active product status. This device provides robust availability with 35,300 units in stock. The RFP70N06 from onsemi delivers 70A continuous drain current at 60V with 150W power dissipation matching the original part. Both devices are through-hole mounted in TO-220 configuration and comply with RoHS3 and REACH standards.

Tier 3: Higher Current Capacity Alternatives (Obsolete Status)

The PSMN4R6-60PS,127 and PSMN3R0-60PS,127 from Nexperia USA Inc. provide significantly higher current ratings (100A) at 60V, though both are classified as Obsolete. These parts are suitable only when higher current capacity is required and long-term availability is not critical. The PSMN4R6-60PS,127 offers superior on-state resistance (4.6 mOhm) and is preferred over PSMN3R0-60PS,127 for efficiency-critical applications.

Tier 4: Voltage-Elevated Alternative

The IXTP70N075T2 from IXYS (TrenchT2™ series) operates at 75V Vdss with 70A continuous drain current. This part is suitable only when higher voltage margin is required. The elevated voltage rating may introduce unnecessary design complexity and cost for 60V applications.

Tier 5: Lower Current Alternatives (Not Recommended for Direct Substitution)

The IRFZ48PBF and IRFZ48RPBF from Vishay Siliconix are rated for only 50A continuous drain current, below the 72A requirement of the original part. These devices are suitable only for applications with reduced current demands.

Frequently Asked Questions (FAQ)

Q1: Can the IRF1010EZPBF directly replace the IRFZ48VPBF without circuit modifications?

The IRF1010EZPBF meets all primary electrical specifications: 60V Vdss, 75A continuous drain current (exceeding 72A), ±20V gate voltage rating, and -55°C to 175°C operating range. Both devices use TO-220AB through-hole packaging with identical pinout. No circuit modifications are required. The improved on-state resistance (8.5 mOhm vs. 12 mOhm) and reduced gate charge (86 nC vs. 110 nC) provide performance benefits without compatibility issues.

Q2: What is the difference between TO-220AB and TO-220-3 packaging?

TO-220AB and TO-220-3 refer to the same physical package format with three leads (Gate, Drain, Source). The designations are manufacturer-specific nomenclature. Devices in either format are mechanically and electrically interchangeable when mounted in standard TO-220 through-hole footprints. Pin assignments remain identical across all listed substitutes.

Q3: Why are PSMN4R6-60PS,127 and PSMN3R0-60PS,127 listed as Obsolete?

Both Nexperia parts are classified as Obsolete by the manufacturer, indicating discontinued production. These devices remain available in current inventory (8,805 and 2,280 units respectively) but are not recommended for new designs. Use these parts only when higher current capacity (100A) is essential and existing stock is available. For new designs, select from Tier 1 or Tier 2 active-status alternatives.

Q4: Can I use STP55NF06 or STP60NF06 if my application requires exactly 72A?

The STP55NF06 is rated for 50A continuous drain current, which is below the 72A requirement. The STP60NF06 is rated for 60A, also below 72A. These STMicroelectronics devices are suitable only for applications with maximum current demands of 50A and 60A respectively. For 72A or higher current requirements, select IRF1010EZPBF, IRF1018EPBF, RFP70N06, or the higher-capacity Nexperia alternatives.

Q5: Does the IXTP70N075T2 offer advantages over 60V-rated substitutes?

The IXTP70N075T2 operates at 75V Vdss, providing 25% higher voltage margin than the original 60V specification. This elevated rating is unnecessary for 60V applications and introduces no functional benefit. The device is suitable only when circuit design requires higher voltage headroom. For standard 60V applications, 60V-rated substitutes are preferred to avoid unnecessary cost and component variation.

Q6: What compliance certifications apply to all listed substitute parts?

All substitute parts listed comply with RoHS3 (Restriction of Hazardous Substances Directive 3) and REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulations. These certifications ensure environmental and health compliance for commercial and industrial applications. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q7: How do on-state resistance (Rds On) differences affect circuit performance?

On-state resistance directly impacts conduction losses and heat dissipation. Lower Rds On values reduce power loss during device operation. The IRF1018EPBF (8.4 mOhm) and IRF1010EZPBF (8.5 mOhm) provide superior efficiency compared to the original IRFZ48VPBF (12 mOhm). For high-current or thermally constrained applications, lower Rds On values reduce junction temperature rise and improve reliability. However, Rds On differences do not prevent functional substitution in applications where thermal performance is adequate.

Q8: What is the significance of gate charge (Qg) in MOSFET selection?

Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching frequencies. The IRF1018EPBF (69 nC) and IRF1010EZPBF (86 nC) offer reduced switching losses compared to the original part (110 nC). For high-frequency switching applications, lower gate charge improves efficiency. For DC or low-frequency switching applications, gate charge differences have minimal impact on performance.

Q9: Are there any thermal considerations when substituting the IRFZ48VPBF?

All listed substitutes operate across the same temperature range (-55°C to 175°C TJ) as the original part. Power dissipation ratings vary: the original IRFZ48VPBF is rated for 150W, while alternatives range from 110W to 306W. Ensure that the selected substitute's power dissipation rating meets or exceeds the thermal requirements of your application. Devices with higher power dissipation ratings provide greater thermal margin and are preferred for high-current or continuous-duty applications.

Q10: Which substitute offers the best overall performance for new designs?

The IRF1018EPBF from Infineon Technologies is recommended for new designs. It provides the highest continuous drain current rating (79A) among active-status Infineon alternatives, the lowest gate charge (69 nC) for efficient switching, and improved on-state resistance (8.4 mOhm) compared to the original part. Active product status ensures long-term availability and supply chain stability. RoHS3 and REACH compliance meet all regulatory requirements.

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