IRFZ48S N-Channel 60V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 50A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The IRFZ48S serves in switching applications requiring moderate voltage and current handling in compact surface mount form factors.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
RDS(on) Max @ Id, Vgs	18	mOhm @ 43A, 10V
Gate Threshold Voltage (Vgs(th)) Max	4	V @ 250µA
Gate Charge (Qg) Max @ Vgs	110	nC @ 10V
Input Capacitance (Ciss) Max	2400	pF @ 25V
Power Dissipation Max (Ta)	3.7	W
Power Dissipation Max (Tc)	190	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Gate Voltage Max (Vgs)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFZ48S is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 50A or greater at 25°C
Package Type: TO-263 (D2PAK) surface mount
Operating Temperature Range: -55°C to 175°C minimum
Gate Voltage Rating (Vgs): ±20V or greater

Secondary Compatibility Parameters:

RDS(on) characteristics at specified gate voltage
Gate Charge (Qg) and Input Capacitance (Ciss) for switching performance
Power dissipation capability
RoHS and REACH compliance status

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Functional Alternatives (meeting or exceeding primary criteria with acceptable variations in secondary parameters).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	RDS(on) Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Power Diss. Tc (W)	Product Status	RoHS Status
IRFZ48S	Vishay Siliconix	60	50	18 @ 43A, 10V	110 @ 10V	2400 @ 25V	190	Obsolete	Non-compliant
IRFZ48SPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	110 @ 10V	2400 @ 25V	190	Active	RoHS3 Compliant
IPB081N06L3GATMA1	Infineon Technologies	60	50	8.1 @ 50A, 10V	29 @ 4.5V	4900 @ 30V	79	Active	RoHS3 Compliant
IPB090N06N3GATMA1	Infineon Technologies	60	50	9 @ 50A, 10V	36 @ 10V	2900 @ 30V	71	Active	RoHS3 Compliant
IRFS3806TRLPBF	Infineon Technologies	60	43	15.8 @ 25A, 10V	30 @ 10V	1150 @ 50V	71	Active	RoHS3 Compliant
FQB50N06TM	onsemi	60	50	22 @ 25A, 10V	41 @ 10V	1540 @ 25V	120	Obsolete	RoHS3 Compliant
HUF76429S3ST	onsemi	60	47	22 @ 47A, 10V	46 @ 10V	1480 @ 25V	110	Active	RoHS3 Compliant
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A, 10V	20.9 @ 10V	1220 @ 30V	86	Active	RoHS3 Compliant
STB55NF06LT4	STMicroelectronics	60	55	18 @ 27.5A, 10V	37 @ 4.5V	1700 @ 25V	95	Active	RoHS3 Compliant
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	60 @ 10V	1300 @ 25V	110	Active	RoHS3 Compliant
STB60NF06T4	STMicroelectronics	60	60	16 @ 30A, 10V	66 @ 10V	1810 @ 25V	110	Active	RoHS3 Compliant

Engineering Selection Recommendations

Direct Parametric Equivalent (Recommended for Immediate Replacement):

IRFZ48SPBF is the direct parametric equivalent to IRFZ48S. This part maintains identical electrical specifications across all critical parameters including Vdss, Id, RDS(on), gate charge, and input capacitance. The primary distinction is product status: IRFZ48SPBF is active and RoHS3 compliant, whereas IRFZ48S is obsolete and non-compliant. IRFZ48SPBF is suitable for direct substitution without circuit redesign.

Active Alternatives with Enhanced Performance:

For applications where component availability or compliance requirements are critical, the following active parts provide functional equivalence with improved characteristics:

PSMN015-60BS,118 (Nexperia): Meets all primary criteria with superior RDS(on) performance (14.8 mOhm) and lower gate charge (20.9 nC), resulting in improved switching efficiency and reduced power dissipation.
STB55NF06T4 (STMicroelectronics): Exceeds current rating (50A) with 55A capability and maintains RDS(on) at 18 mOhm. Provides higher power dissipation margin (110W Tc).
STB60NF06T4 (STMicroelectronics): Highest current rating (60A) among substitutes with improved RDS(on) (16 mOhm @ 30A). Suitable for applications requiring additional current headroom.

Infineon OptiMOS™ Series:

IPB081N06L3GATMA1: Superior RDS(on) performance (8.1 mOhm) with lower gate charge (29 nC @ 4.5V). Recommended for high-frequency switching applications where efficiency is prioritized.
IPB090N06N3GATMA1: Balanced performance with 9 mOhm RDS(on) and moderate gate charge (36 nC). Suitable for general-purpose switching with improved thermal characteristics.

Current-Limited Alternative:

IRFS3806TRLPBF (Infineon): Rated for 43A continuous drain current, below the 50A specification. Acceptable only in applications where actual operating current does not exceed 43A.

Compliance Consideration:

All recommended substitutes are RoHS3 compliant and REACH unaffected, addressing regulatory requirements that the obsolete IRFZ48S does not meet. Selection should prioritize active parts with current product status for long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can IRFZ48SPBF be used as a direct replacement for IRFZ48S?

A: Yes. IRFZ48SPBF is electrically identical to IRFZ48S across all specified parameters. The primary difference is product status (active vs. obsolete) and RoHS compliance. No circuit modifications are required.

Q: What is the difference between the Infineon IPB081N06L3GATMA1 and IPB090N06N3GATMA1?

A: Both parts meet the 60V/50A specification. IPB081N06L3GATMA1 offers superior RDS(on) (8.1 mOhm) and lower gate charge (29 nC @ 4.5V), making it more efficient for high-frequency applications. IPB090N06N3GATMA1 provides balanced performance with 9 mOhm RDS(on) and is optimized for standard switching applications.

Q: Why do some substitutes have different RDS(on) values at different current levels?

A: RDS(on) is current-dependent and varies with gate voltage and junction temperature. Manufacturers specify RDS(on) at specific operating points. Comparison requires evaluation at the actual application current and gate voltage. Lower RDS(on) values indicate reduced conduction losses and improved efficiency.

Q: Is IRFS3806TRLPBF suitable for applications requiring 50A continuous current?

A: No. IRFS3806TRLPBF is rated for 43A continuous drain current, which is below the 50A specification of IRFZ48S. This part is acceptable only in applications where actual operating current does not exceed 43A.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and driver power requirements. Lower gate charge (such as PSMN015-60BS,118 at 20.9 nC) enables faster switching and reduces driver stress. Higher gate charge (such as IRFZ48S at 110 nC) requires more driver current but may provide better noise immunity in some applications.

Q: Are all substitute parts available in the same TO-263 (D2PAK) package?

A: Yes. All listed substitutes are packaged in TO-263 (D2PAK) surface mount configuration, ensuring mechanical and thermal compatibility with IRFZ48S PCB layouts.

Q: Which substitute offers the best thermal performance?

A: STB60NF06T4 provides the highest power dissipation capability at 110W (Tc) with the lowest RDS(on) at 16 mOhm @ 30A. For applications with stringent thermal requirements, this part offers the best margin.

Q: Do all substitutes meet RoHS and REACH compliance?

A: All listed substitutes are RoHS3 compliant and REACH unaffected. The original IRFZ48S is RoHS non-compliant, making compliant substitutes necessary for regulated applications.

Q: What is the operating temperature range for substitute parts?

A: All substitutes operate across -55°C to 175°C (TJ), matching the IRFZ48S specification. STB60NF06T4 extends the lower limit to -65°C, providing additional cold-temperature margin.

Q: How do input capacitance (Ciss) differences affect circuit design?

A: Input capacitance affects gate drive requirements and switching transients. Higher Ciss (such as IPB081N06L3GATMA1 at 4900 pF) requires more gate charge but may reduce EMI. Lower Ciss (such as IRFS3806TRLPBF at 1150 pF) enables faster switching with reduced driver power.

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