IRFZ48R N-Channel 60V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ48R is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 50A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The IRFZ48R serves in switching applications requiring moderate voltage and current handling with through-hole mounting compatibility.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-State Resistance (Rds On) @ 43A, 10V	18	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	Non-compliant

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 50A or greater at 25°C
Gate Drive Voltage: 10V nominal
Package Type: TO-220 or TO-220AB through-hole configuration
Operating Temperature Range: -55°C to 175°C or equivalent

Substitution Categories:

Category 1: Parametric Equivalents — Identical electrical specifications and active product status. These parts are direct replacements with modern RoHS compliance.

Category 2: Functional Equivalents — Meet or exceed the primary electrical requirements (Vdss, Id, Rds On) but may have minor variations in secondary parameters such as gate charge or input capacitance. Suitable for applications where the IRFZ48R performance envelope is maintained.

Category 3: Reduced Performance Substitutes — Lower continuous current rating or reduced power dissipation. Applicable only when circuit design permits operation within the lower specification limits.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status	RoHS
IRFZ48R	Vishay Siliconix	60	50	18 @ 43A	110	190	TO-220AB	Obsolete	Non-compliant
IRFZ48PBF	Vishay Siliconix	60	50	18 @ 43A	110	190	TO-220AB	Active	Compliant
IRFZ48RPBF	Vishay Siliconix	60	50	18 @ 43A	110	190	TO-220AB	Active	Compliant
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A	60	110	TO-220	Active	Compliant
RFP50N06	Harris Corporation	60	50	22 @ 50A	150	131	TO-220-3	Obsolete	Non-compliant
NDP6060L	onsemi	60	48	20 @ 24A	60	100	TO-220-3	Active	Compliant
FDP55N06	onsemi	60	55	22 @ 27.5A	37	114	TO-220-3	Obsolete	Compliant
IRFB3806PBF	Infineon Technologies	60	43	15.8 @ 25A	30	71	TO-220AB	Active	Compliant
IRFZ48NPBF	Infineon Technologies	55	64	14 @ 32A	81	130	TO-220AB	Active	Compliant
STP45NF06	STMicroelectronics	60	38	28 @ 19A	58	80	TO-220	Active	Compliant
AOT2618L	Alpha & Omega Semiconductor	60	23	19 @ 20A	20	41.5	TO-220	Active	Compliant

Engineering Selection Recommendations

Tier 1: Direct Parametric Equivalents (Preferred)

IRFZ48PBF and IRFZ48RPBF are direct electrical equivalents manufactured by Vishay Siliconix with identical specifications to the IRFZ48R. Both parts are in active production status and RoHS3 compliant, addressing the obsolescence and compliance limitations of the original part. These are the primary recommended substitutes for new designs and legacy system updates.

Tier 2: Functional Equivalents with Active Status

STP55NF06 (STMicroelectronics) meets the 60V/50A specification envelope with lower gate charge (60 nC vs. 110 nC) and reduced power dissipation (110W vs. 190W). This part is actively produced and RoHS3 compliant. The lower gate charge enables faster switching characteristics, beneficial in high-frequency applications.

NDP6060L (onsemi) provides 60V/48A operation with active status and RoHS3 compliance. The 48A rating is within 96% of the IRFZ48R specification and suitable for applications where the full 50A is not required. Lower power dissipation (100W) indicates improved thermal efficiency.

IRFZ48NPBF (Infineon Technologies) operates at 55V with 64A continuous current, exceeding the IRFZ48R current rating. This part is suitable for applications where higher current capacity is beneficial, though the reduced voltage rating (55V vs. 60V) must be verified against circuit requirements.

Tier 3: Reduced Performance Substitutes

IRFB3806PBF (Infineon Technologies) is rated for 60V/43A, providing 86% of the IRFZ48R current capacity. This part is active and RoHS3 compliant with superior on-state resistance (15.8 mOhm). Selection requires confirmation that circuit operation is acceptable at 43A maximum.

STP45NF06 (STMicroelectronics) provides 60V/38A operation, representing 76% of the original current rating. This part is active and RoHS3 compliant. Use is limited to applications where continuous current demand does not exceed 38A.

AOT2618L (Alpha & Omega Semiconductor) is rated for 60V/23A, providing 46% of the IRFZ48R current capacity. This part is active and RoHS3 compliant but is suitable only for low-current switching applications.

Obsolete Parts to Avoid

RFP50N06 (Harris Corporation) and FDP55N06 (onsemi) are classified as obsolete. While FDP55N06 is RoHS3 compliant, both parts present long-term supply risk and should not be selected for new designs.

Frequently Asked Questions (FAQ)

Q: Can IRFZ48PBF or IRFZ48RPBF be used as direct replacements for IRFZ48R?

A: Yes. IRFZ48PBF and IRFZ48RPBF are parametric equivalents with identical electrical specifications (60V, 50A, 18 mOhm Rds On, 190W power dissipation) and the same TO-220AB package. Both are in active production with RoHS3 compliance, making them suitable for direct substitution in existing designs.

Q: What is the difference between IRFZ48PBF and IRFZ48RPBF?

A: Both parts are manufactured by Vishay Siliconix with identical electrical specifications and package type. The difference lies in the manufacturing process designation (PBF vs. RPBF), which indicates different production batches or process revisions. Both are functionally equivalent and interchangeable.

Q: Is STP55NF06 a suitable replacement if my circuit operates at high switching frequencies?

A: STP55NF06 is suitable for high-frequency applications. The part has lower gate charge (60 nC vs. 110 nC for IRFZ48R), enabling faster switching transitions and reduced switching losses. Verify that the reduced power dissipation rating (110W vs. 190W) is acceptable for your thermal design.

Q: Can I use IRFZ48NPBF if my circuit is designed for 60V operation?

A: IRFZ48NPBF operates at 55V maximum drain-to-source voltage, which is 5V lower than the IRFZ48R specification. Use this part only if your circuit design includes sufficient voltage margin and the actual operating voltage does not exceed 55V. For circuits requiring the full 60V rating, select a 60V-rated substitute.

Q: What is the impact of using a lower-current-rated substitute such as STP45NF06 (38A) instead of IRFZ48R (50A)?

A: STP45NF06 is suitable only if your circuit's continuous drain current requirement does not exceed 38A. Exceeding this rating will cause thermal stress and potential device failure. Verify the actual circuit current demand before selecting a reduced-rating substitute.

Q: Are all recommended substitutes RoHS3 compliant?

A: All Tier 1 and Tier 2 substitutes (IRFZ48PBF, IRFZ48RPBF, STP55NF06, NDP6060L, IRFZ48NPBF, IRFB3806PBF, STP45NF06, AOT2618L) are RoHS3 compliant. The original IRFZ48R is RoHS non-compliant. FDP55N06 is RoHS3 compliant but obsolete. RFP50N06 is RoHS non-compliant and obsolete.

Q: Can I use parts with different package designations (TO-220 vs. TO-220AB vs. TO-220-3)?

A: TO-220, TO-220AB, and TO-220-3 are all three-lead through-hole packages with identical pin configurations and mechanical footprints. Parts with these package designations are mechanically interchangeable on standard PCB layouts. Verify pinout orientation (Gate, Drain, Source) before installation.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects the speed and energy required to switch the MOSFET on and off. Lower gate charge (e.g., STP55NF06 at 60 nC vs. IRFZ48R at 110 nC) enables faster switching and lower gate drive power consumption. Higher gate charge requires more robust gate drive circuitry. Select based on your gate driver capability and switching frequency requirements.

Q: Should I select a substitute with higher current rating than the IRFZ48R?

A: Higher current rating (e.g., IRFZ48NPBF at 64A) provides additional design margin and thermal headroom. However, verify that the voltage rating remains adequate (IRFZ48NPBF is 55V, not 60V). Higher-rated devices may have different on-state resistance and gate charge characteristics that affect circuit performance.

Q: What inventory considerations apply to these substitutes?

A: IRFZ48PBF and IRFZ48RPBF have lower inventory (2000-2050 pcs) compared to STP55NF06 (155,400 pcs) and IRFZ48NPBF (37,390 pcs). For high-volume production, STP55NF06 offers superior supply availability. For legacy system support, IRFZ48PBF or IRFZ48RPBF provide the closest match to the original IRFZ48R.

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