IRFZ48NSTRR N-Channel MOSFET 55V 64A D2PAK Equivalent & Substitute Parts

Part Overview

The IRFZ48NSTRR is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 64A continuous drain current in D2PAK surface mount packaging. This part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

Equivalent parts maintain identical or near-identical electrical and mechanical specifications, enabling direct replacement without circuit redesign. Substitute parts offer comparable performance within acceptable parameter ranges, suitable for applications where minor specification variations are tolerable.

Key Parameters

Parameter	Value	Unit	Specification Basis
Drain-to-Source Voltage (Vdss)	55	V	Maximum voltage rating
Continuous Drain Current (Id) @ 25°C	64	A	Tc rating
On-State Resistance (Rds On) @ 32A, 10V	14	mOhm	Max specification
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V	Max specification
Gate Charge (Qg) @ 10V	81	nC	Max specification
Power Dissipation (Tc)	130	W	Max specification
Operating Temperature Range	-55 to 175	°C	Junction temperature
Package Type	D2PAK (TO-263-3)	—	Surface mount
RoHS Compliance	Non-compliant	—	Product status

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria applied strictly to provided parameters:

Parametric Equivalence Category: Parts with identical Vdss (55V), Id (64A), Rds On (14 mOhm @ 32A, 10V), and D2PAK packaging qualify as direct parametric equivalents. These parts maintain the same electrical performance envelope and mechanical compatibility.

Functional Substitute Category: Parts with Vdss ≥ 55V, Id ≥ 64A, Rds On ≤ 14 mOhm, and D2PAK packaging qualify as functional substitutes. Higher voltage ratings and current capabilities provide design margin. Lower on-state resistance reduces power dissipation. All parts must maintain D2PAK surface mount packaging and -55°C to 175°C operating temperature range.

Compliance Consideration: Active product status and RoHS3 compliance are engineering selection factors for new designs and procurement continuity.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Package	Product Status	RoHS
IRFZ48NSTRR	Infineon	55	64	14 @ 32A, 10V	81 @ 10V	D2PAK	Obsolete	Non-compliant
IRFZ48NSTRLPBF	Infineon	55	64	14 @ 32A, 10V	81 @ 10V	D2PAK	Active	ROHS3
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	D2PAK	Active	ROHS3
IRFZ48RSPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	110 @ 10V	D2PAK	Active	ROHS3
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A, 10V	20.9 @ 10V	D2PAK	Active	ROHS3
PSMN7R6-60BS,118	Nexperia USA Inc.	60	92	7.8 @ 25A, 10V	38.7 @ 10V	D2PAK	Active	ROHS3
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	60 @ 10V	D2PAK	Active	ROHS3
STB60NF06T4	STMicroelectronics	60	60	16 @ 30A, 10V	66 @ 10V	D2PAK	Active	ROHS3
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	D2PAK	Active	ROHS3
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	D2PAK	Active	ROHS3

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRFZ48NSTRLPBF is the active equivalent of IRFZ48NSTRR. Both parts share identical electrical specifications: 55V Vdss, 64A Id, 14 mOhm Rds On, and D2PAK packaging. The primary distinction is product status and RoHS compliance. IRFZ48NSTRLPBF is classified as active with ROHS3 compliance, providing procurement continuity and regulatory alignment for new designs.

Functional Substitutes (Performance-Equivalent Alternatives):

Parts meeting or exceeding the IRFZ48NSTRR performance envelope within D2PAK packaging are suitable for applications tolerating specification variations:

HUF75545S3ST (onsemi UltraFET™) provides 80V Vdss and 75A Id with 10 mOhm Rds On, delivering improved current handling and reduced on-state losses. Higher voltage rating accommodates transient overvoltage conditions.

PSMN7R6-60BS,118 (Nexperia) offers 60V Vdss and 92A Id with 7.8 mOhm Rds On, providing superior current capacity and lower conduction losses within the same voltage class.

STB60NF06T4 (STMicroelectronics STripFET™ II) delivers 60V Vdss and 60A Id with 16 mOhm Rds On, maintaining comparable performance with active product status.

STB75NF75T4 (STMicroelectronics STripFET™ II) provides 75V Vdss and 80A Id with 11 mOhm Rds On, offering enhanced performance margin for demanding applications.

Selection Criteria:

All recommended substitutes maintain D2PAK surface mount packaging, -55°C to 175°C operating temperature range, ±20V maximum gate voltage, and RoHS3 compliance. Selection between alternatives depends on application requirements for voltage margin, current capacity, and thermal dissipation.

Frequently Asked Questions (FAQ)

Q: Can IRFZ48NSTRLPBF directly replace IRFZ48NSTRR without circuit modification?

A: Yes. IRFZ48NSTRLPBF is the parametric equivalent with identical Vdss (55V), Id (64A), Rds On (14 mOhm), and D2PAK packaging. The only differences are product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant). No circuit redesign is required.

Q: What is the primary advantage of HUF75545S3ST over IRFZ48NSTRR?

A: HUF75545S3ST provides higher voltage rating (80V vs. 55V), greater current capacity (75A vs. 64A), and lower on-state resistance (10 mOhm vs. 14 mOhm). These improvements reduce conduction losses and provide design margin for transient overvoltage conditions. D2PAK packaging remains compatible.

Q: Are all substitute parts compatible with existing PCB layouts designed for IRFZ48NSTRR?

A: Yes. All listed substitutes use D2PAK (TO-263-3) surface mount packaging with identical pin configuration and thermal tab placement. PCB layouts require no modification. Verify gate drive voltage compatibility (all parts accept ±20V Vgs maximum) and thermal management capacity for parts with higher power dissipation ratings.

Q: Which substitute offers the lowest on-state resistance?

A: PSMN7R6-60BS,118 provides the lowest Rds On at 7.8 mOhm (measured @ 25A, 10V), reducing conduction losses compared to IRFZ48NSTRR at 14 mOhm. This part also delivers 92A continuous drain current, exceeding the original 64A specification.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects gate drive circuit design and switching speed. IRFZ48NSTRR specifies 81 nC @ 10V. Substitutes range from 20.9 nC (PSMN015-60BS,118) to 235 nC (HUF75545S3ST). Lower gate charge enables faster switching and reduced gate drive power. Higher gate charge may require gate drive circuit adjustment but does not prevent substitution if the drive circuit has adequate current capacity.

Q: Can IRFZ48NSTRR be replaced with IPB50N10S3L16ATMA1 in a 55V application?

A: IPB50N10S3L16ATMA1 is rated for 100V Vdss, exceeding the 55V requirement. While the higher voltage rating provides design margin, the part delivers only 50A continuous current versus 64A for IRFZ48NSTRR. This substitution is suitable only if the application current requirement does not exceed 50A. Verify thermal dissipation: IPB50N10S3L16ATMA1 dissipates 100W (Tc) versus 130W (Tc) for IRFZ48NSTRR.

Q: Are there packaging alternatives to D2PAK for IRFZ48NSTRR?

A: All listed equivalents and substitutes maintain D2PAK (TO-263-3) surface mount packaging. No alternative package types are included in this reference. If alternative packages are required, separate component search is necessary.

Q: What compliance certifications apply to substitute parts?

A: All active substitute parts listed carry ROHS3 compliance and REACH unaffected status. ECCN classification is EAR99 for all parts. Moisture sensitivity level (MSL) is 1 (unlimited) for all parts, indicating no moisture precautions required during storage or handling.

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