IRFZ46ZS N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ46ZS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 51A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and system updates.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	51	A
Rds On (Max) @ 31A, 10V	13.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	46	nC
Input Capacitance (Ciss) @ 25V	1460	pF
Power Dissipation (Max)	82	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFZ46ZS is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have Vdss equal to or greater than 55V. Parts rated at 60V or higher maintain backward compatibility with the original 55V specification.

Current Rating Compatibility: Substitute parts must have continuous drain current (Id) equal to or greater than 51A at 25°C. This ensures the substitute can handle the same or higher current loads without thermal stress.

On-Resistance (Rds On): Substitute parts should maintain comparable or lower Rds On values to ensure similar power dissipation characteristics and thermal performance.

Package Compatibility: All substitute parts must use D2PAK (TO-263-3) surface mount packaging to ensure mechanical and thermal interface compatibility with existing PCB designs.

Gate Drive Voltage: Substitute parts must be compatible with 10V gate drive voltage, the standard drive voltage for the IRFZ46ZS.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating temperature range.

RoHS and Compliance Status: Active substitute parts must meet current RoHS3 compliance requirements, as the original IRFZ46ZS is RoHS non-compliant and obsolete.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Power Dissipation (W)	Package	Status
IRFZ46ZS	Infineon	55	51	13.6	4	46	82	D2PAK	Obsolete
HUF76439S3ST	onsemi	60	75	12	3	84	180	D2PAK	Active
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8	4	20.9	86	D2PAK	Active
PSMN7R6-60BS,118	Nexperia USA Inc.	60	92	7.8	4	38.7	149	D2PAK	Active
STB55NF06T4	STMicroelectronics	60	50	18	4	60	110	D2PAK	Active
STB60NF06T4	STMicroelectronics	60	60	16	4	66	110	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11	2.5	90	300	D2PAK	Active
STB75NF75T4	STMicroelectronics	75	80	11	4	160	300	D2PAK	Active

Engineering Selection Recommendations

Primary Substitutes (60V Rating Class):

The PSMN015-60BS,118 (Nexperia) and STB55NF06T4 (STMicroelectronics) provide the closest electrical match to the IRFZ46ZS. Both devices maintain 60V Vdss rating with continuous drain current at or near 50A, comparable Rds On characteristics, and identical D2PAK packaging. Both are RoHS3 compliant and carry active product status, ensuring long-term availability and supply chain stability.

Enhanced Performance Substitutes (60V Rating Class):

The STB60NF06T4 (STMicroelectronics) and PSMN7R6-60BS,118 (Nexperia) offer higher current ratings (60A and 92A respectively) while maintaining the 60V voltage class. These parts provide design margin for applications requiring higher current capacity without changing the package footprint or gate drive requirements. Both are RoHS3 compliant and active.

High-Performance Substitute (75V Rating Class):

The HUF76439S3ST (onsemi) provides the highest current rating (75A) with superior power dissipation capability (180W). This part is suitable for applications requiring significant thermal headroom or higher current handling. The 60V rating provides additional voltage margin beyond the original 55V specification. RoHS3 compliant and active status.

Extended Voltage Substitutes (75V Rating Class):

The STB75NF75LT4 and STB75NF75T4 (STMicroelectronics) offer 75V Vdss rating with 75A and 80A continuous drain current respectively. These parts are suitable for applications requiring higher voltage margins or operating in elevated voltage environments. Both provide significantly higher power dissipation (300W) and are RoHS3 compliant with active status.

Compliance Consideration:

All recommended substitute parts are RoHS3 compliant, addressing the RoHS non-compliant status of the obsolete IRFZ46ZS. This compliance is mandatory for new production designs and system updates in regulated markets.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IRFZ46ZS with any of these substitute parts?

A: Direct replacement is possible only with parts maintaining identical D2PAK packaging and compatible electrical parameters. The PSMN015-60BS,118 and STB55NF06T4 provide the closest electrical match with minimal design changes. Higher-rated parts (60A, 75A, 80A) require verification that gate drive circuits and thermal management remain adequate for the application.

Q: What is the difference between 60V and 75V rated substitutes?

A: The 60V-rated substitutes (HUF76439S3ST, PSMN015-60BS,118, PSMN7R6-60BS,118, STB55NF06T4, STB60NF06T4) provide direct voltage compatibility with the original 55V specification. The 75V-rated substitutes (STB75NF75LT4, STB75NF75T4) offer additional voltage margin for applications operating near maximum ratings or in variable voltage environments. Both classes are electrically compatible with 55V designs.

Q: How do I select between Nexperia, STMicroelectronics, and onsemi substitutes?

A: Selection depends on application-specific requirements. Nexperia parts (PSMN series) offer lower Rds On values, reducing power dissipation. STMicroelectronics parts (STB series) provide balanced performance with established supply chains. onsemi HUF76439S3ST offers the highest current rating and power dissipation capability. All are RoHS3 compliant and active.

Q: Are there any gate drive voltage differences I should consider?

A: The IRFZ46ZS uses 10V gate drive voltage. Most substitutes (PSMN015-60BS,118, STB55NF06T4, STB60NF06T4, STB75NF75T4) are optimized for 10V drive. The HUF76439S3ST and STB75NF75LT4 support both 4.5V and 10V drive voltages, providing additional flexibility. Verify your gate drive circuit specifications before selection.

Q: What is the impact of different Rds On values on my circuit?

A: Lower Rds On values reduce conduction losses and heat generation. The PSMN7R6-60BS,118 (7.8 mOhm) offers the lowest Rds On, reducing power dissipation compared to the original 13.6 mOhm specification. Higher Rds On values (STB55NF06T4 at 18 mOhm) increase conduction losses but remain within acceptable ranges for most applications. Thermal analysis is recommended for high-current applications.

Q: Is the D2PAK package identical across all substitutes?

A: Yes. All substitute parts use D2PAK (TO-263-3) surface mount packaging with identical pinout and thermal interface. PCB footprints and thermal vias designed for IRFZ46ZS are directly compatible with all listed substitutes without modification.

Q: What about RoHS compliance for my design?

A: The original IRFZ46ZS is RoHS non-compliant. All recommended substitutes are RoHS3 compliant, meeting current regulatory requirements for new production designs. This compliance is mandatory for most regulated markets and OEM supply chains.

Q: Can I use higher current-rated parts as direct substitutes?

A: Yes. Parts with higher current ratings (60A, 75A, 80A) are backward compatible with 51A applications. The higher current rating provides design margin without affecting circuit operation. Verify that PCB copper traces and thermal management are adequate for the selected part's power dissipation rating.

Q: What is the difference between STB75NF75LT4 and STB75NF75T4?

A: Both are 75V, 75A/80A D2PAK MOSFETs from STMicroelectronics. The STB75NF75LT4 is rated for 75A with lower gate charge (90 nC), while STB75NF75T4 is rated for 80A with higher gate charge (160 nC). The STB75NF75LT4 offers faster switching characteristics, while STB75NF75T4 provides higher current capacity. Selection depends on switching frequency and current requirements.

Q: Are there supply chain advantages to choosing one manufacturer over another?

A: All recommended substitutes are from established manufacturers (Nexperia, STMicroelectronics, onsemi) with global distribution networks. Current inventory levels are provided in the specification data. STMicroelectronics and Nexperia typically offer broader regional availability, while onsemi provides strong support in specific markets. Verify availability with your component distributor for your specific region and volume requirements.

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