IRFZ46NSTRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ46NSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 53A continuous drain current in a D2PAK surface mount package. This device is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued component availability, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	53	A (Tc)
On-Resistance (Rds On) @ 28A, 10V	16.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	72	nC
Input Capacitance (Ciss) @ 25V	1696	pF
Power Dissipation (Max)	3.8 (Ta), 107 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFZ46NSTRLPBF is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V or 100V are acceptable as they provide voltage margin.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 53A at 25°C. Parts rated between 50A and 60A meet this requirement.

On-Resistance (Rds On): Substitute parts should maintain comparable or lower on-resistance values to ensure thermal performance and power efficiency are not degraded. The reference value is 16.5 mOhm @ 28A, 10V.

Package Compatibility: All substitute parts must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB designs.

Gate Voltage Rating: Substitute parts must support ±20V gate voltage or higher to maintain gate drive compatibility.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating range.

Compliance & Status: Substitute parts must be RoHS3 compliant and preferably in "Active" product status to ensure long-term availability.

Parameter Comparison

Parameter	IRFZ46NSTRLPBF	STB55NF06LT4	STB55NF06T4	STB60NF06T4	PSMN015-60BS,118	IPB50N10S3L16ATMA1
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	Nexperia USA Inc.	Infineon
Vdss (V)	55	60	60	60	60	100
Id @ 25°C (A)	53	55	50	60	50	50
Rds On (mOhm)	16.5 @ 28A, 10V	18 @ 27.5A, 10V	18 @ 27.5A, 10V	16 @ 30A, 10V	14.8 @ 15A, 10V	15.4 @ 50A, 10V
Vgs(th) (V)	4 @ 250µA	4.7 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA	2.4 @ 60µA
Qg @ 10V (nC)	72	37	60	66	20.9	64
Ciss @ 25V (pF)	1696	1700	1300	1810	1220	4180
Power Dissipation (W)	107 (Tc)	95 (Tc)	110 (Tc)	110 (Tc)	86 (Tc)	100 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-65 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	PG-TO263-3-2
Product Status	Not For New Designs	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

STB55NF06LT4 and STB55NF06T4 from STMicroelectronics are the closest electrical equivalents. Both maintain the 55-60A current rating range and 60V voltage rating with comparable on-resistance characteristics. These parts are in Active product status, ensuring long-term availability. The STB55NF06LT4 offers lower gate charge (37 nC) compared to the original part, which may reduce gate drive power requirements. Both are RoHS3 compliant and support the full operating temperature range.

STB60NF06T4 provides the highest current rating (60A) among the 60V alternatives, with the lowest on-resistance (16 mOhm @ 30A, 10V), matching the thermal performance of the original IRFZ46NSTRLPBF. This part extends the operating temperature range to -65°C, providing additional margin for extreme cold environments.

Secondary Substitutes (Voltage Margin):

PSMN015-60BS,118 from Nexperia USA Inc. is rated for 60V and 50A, meeting the minimum current requirement. This part features the lowest on-resistance (14.8 mOhm @ 15A, 10V) and lowest gate charge (20.9 nC), resulting in superior switching efficiency and reduced gate drive losses. It is in Active status with full RoHS3 compliance.

IPB50N10S3L16ATMA1 from Infineon provides a 100V voltage rating with 50A current capability. This part offers significant voltage margin for applications with transient overvoltage conditions. The higher input capacitance (4180 pF) requires consideration in high-frequency switching applications. This part is in Active status and RoHS3 compliant.

Selection Criteria:

Choose STB55NF06LT4 or STB55NF06T4 for direct replacement in applications where the original IRFZ46NSTRLPBF performance envelope is required and component availability is the primary concern.

Choose STB60NF06T4 for applications requiring enhanced thermal performance or extended cold-temperature operation.

Choose PSMN015-60BS,118 for applications prioritizing switching efficiency and reduced gate drive power consumption.

Choose IPB50N10S3L16ATMA1 for applications with potential voltage transients or where voltage margin is a design requirement.

All recommended substitutes are RoHS3 compliant and in Active product status, ensuring regulatory compliance and long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher voltage rating (100V) in place of the 55V IRFZ46NSTRLPBF?

A: Yes. The IPB50N10S3L16ATMA1 rated at 100V is electrically compatible. Higher voltage ratings provide additional margin for transient overvoltage protection. However, the higher input capacitance (4180 pF vs. 1696 pF) may affect gate drive timing in high-frequency applications. Verify gate drive circuit performance before implementation.

Q: What is the impact of different on-resistance values among substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower on-resistance (such as PSMN015-60BS,118 at 14.8 mOhm) reduces conduction losses and heat generation. Higher on-resistance (such as STB55NF06LT4 at 18 mOhm) increases power dissipation. Select based on thermal budget and efficiency requirements of the application.

Q: Are all substitute parts mechanically compatible with the original PCB layout?

A: All recommended substitutes use the D2PAK (TO-263-3) package, ensuring mechanical and thermal interface compatibility. The IPB50N10S3L16ATMA1 uses the equivalent PG-TO263-3-2 package designation, which is mechanically identical. No PCB layout modifications are required.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (PSMN015-60BS,118 at 20.9 nC) reduces gate drive power and switching losses, beneficial for high-frequency applications. Higher gate charge (IRFZ46NSTRLPBF at 72 nC) requires more gate drive energy but may offer better noise immunity in noisy environments.

Q: Which substitute part offers the best thermal performance?

A: STB60NF06T4 combines the lowest on-resistance (16 mOhm @ 30A, 10V) with the highest power dissipation rating (110W @ Tc), providing superior thermal performance. PSMN015-60BS,118 also offers excellent thermal characteristics with 14.8 mOhm on-resistance and 86W power dissipation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Not For New Designs" indicates the IRFZ46NSTRLPBF has been superseded and is no longer recommended for new circuit designs, though existing inventory remains available. "Active" status indicates the substitute parts are current products with guaranteed long-term availability and manufacturer support.

Q: Can I use STB55NF06LT4 and STB55NF06T4 interchangeably?

A: Both parts are mechanically and electrically compatible. The primary difference is gate charge: STB55NF06LT4 has 37 nC while STB55NF06T4 has 60 nC. Choose based on gate drive circuit requirements. STB55NF06LT4 is preferred for applications requiring lower gate drive power.

Q: How do I verify substitute part compatibility with my gate drive circuit?

A: Compare gate threshold voltage (Vgs(th)), maximum gate voltage (Vgs Max), gate charge (Qg), and input capacitance (Ciss) specifications. Ensure your gate drive circuit can supply the required voltage and current to meet the gate charge within the desired switching time. Verify operating temperature range compatibility with your application environment.

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