IRFZ46NPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ46NPBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 53A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration with a maximum power dissipation of 107W. This part carries a "Not For New Designs" product status, indicating it has been superseded in Infineon's product portfolio. Equivalent and substitute parts are necessary for ongoing production support, design flexibility, and inventory management when the original part becomes unavailable or when design requirements permit alternative specifications within acceptable electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	53	A
On-State Resistance (Rds On) @ 28A, 10V	16.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	72	nC
Power Dissipation (Max)	107	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the IRFZ46NPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥55V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥53A to support rated load conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible at standard gate drive levels (4V nominal)
Package Type: TO-220AB or TO-220-3 (mechanically and electrically compatible through-hole packages)
Operating Temperature Range: Must span -55°C to 175°C minimum
Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; higher values acceptable if thermal design accommodates increased dissipation
Gate Charge (Qg): Affects switching speed and gate drive requirements; variations acceptable within circuit design margins
Power Dissipation: Must be adequate for application thermal environment

Substitute parts are grouped into two categories:

Category A - Direct Voltage/Current Match (55V, ≥53A): HUF75332P3, HUF75339P3, HUF75344P3, PHP191NQ06LT,127

Category B - Elevated Voltage Rating (60V, ≥38A): IRFB3806PBF, STP45NF06, STP55NF06

All substitute parts maintain N-Channel MOSFET technology, through-hole mounting, and -55°C to 175°C operating temperature range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRFZ46NPBF	Infineon	55	53	16.5 @ 28A	72 @ 10V	107	TO-220AB	Not For New Designs
IRFB3806PBF	Infineon	60	43	15.8 @ 25A	30 @ 10V	71	TO-220AB	Active
HUF75332P3	onsemi	55	60	19 @ 60A	85 @ 20V	145	TO-220-3	Active
HUF75339P3	onsemi	55	75	12 @ 75A	130 @ 20V	200	TO-220-3	Active
HUF75344P3	onsemi	55	75	8 @ 75A	210 @ 20V	285	TO-220-3	Active
PHP191NQ06LT,127	Nexperia USA Inc.	55	75	3.7 @ 25A	95.6 @ 5V	300	TO-220AB	Obsolete
STP45NF06	STMicroelectronics	60	38	28 @ 19A	58 @ 10V	80	TO-220	Active
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A	60 @ 10V	110	TO-220	Active

Engineering Selection Recommendations

For Active Product Status Requirement:

If design specifications mandate use of active (non-obsolete) components, the following substitutes are qualified:

IRFB3806PBF (Infineon, Active): Maintains Infineon HEXFET® series continuity with elevated 60V rating. Suitable for applications where 43A continuous current satisfies load requirements and 71W power dissipation is acceptable.
HUF75332P3 (onsemi, Active): Matches 55V rating with 60A capability and 145W dissipation. UltraFET™ series technology provides improved performance margin.
HUF75339P3 (onsemi, Active): Matches 55V rating with 75A capability and 200W dissipation. Recommended for applications requiring higher current headroom.
HUF75344P3 (onsemi, Active): Matches 55V rating with 75A capability and 285W dissipation. Superior on-state resistance (8mOhm) reduces thermal load in high-current applications.
STP55NF06 (STMicroelectronics, Active): Elevated 60V rating with 50A capability and 110W dissipation. STripFET™ II series provides active product support with high inventory availability (155,400 pcs).

For Compliance and Certification:

All listed substitutes maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification. MSL rating of 1 (Unlimited) applies to Infineon and STMicroelectronics parts; onsemi parts carry "Not Applicable" MSL designation.

Avoid in New Designs:

PHP191NQ06LT,127 (Nexperia, Obsolete) carries obsolete product status and should not be selected for new production designs despite superior electrical characteristics.

Frequently Asked Questions (FAQ)

Q: Can IRFB3806PBF directly replace IRFZ46NPBF in existing designs?

A: IRFB3806PBF is electrically compatible for applications where 43A continuous current and 71W power dissipation meet design requirements. The elevated 60V rating provides additional voltage margin. Package compatibility is confirmed (both TO-220AB). Gate threshold voltage (4V @ 50µA) is compatible with standard gate drive circuits. Verify thermal design accommodates reduced power dissipation rating.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with identical pin pitch and mechanical footprint. TO-220AB and TO-220-3 designations refer to the same physical package type. All listed substitutes are mechanically interchangeable in TO-220 footprints.

Q: Why does HUF75344P3 have lower on-state resistance (8mOhm) than IRFZ46NPBF (16.5mOhm)?

A: Lower on-state resistance reflects advanced semiconductor process technology in the UltraFET™ series. This reduces conduction losses and heat generation at equivalent current levels. Applications benefit from improved efficiency and reduced thermal management requirements.

Q: Is STP55NF06 suitable for IRFZ46NPBF replacement?

A: STP55NF06 is suitable when the 60V rating and 50A continuous current satisfy application requirements. The 110W power dissipation is comparable to IRFZ46NPBF (107W). High inventory availability (155,400 pcs) supports production continuity. Verify gate drive compatibility; Vgs(th) is 4V @ 250µA, matching IRFZ46NPBF specifications.

Q: What is the impact of higher gate charge (Qg) in substitute parts?

A: Higher gate charge increases gate drive current requirements and switching transition time. HUF75344P3 (210 nC @ 20V) requires higher gate drive capability than IRFZ46NPBF (72 nC @ 10V). Verify gate driver circuit can supply required charge without exceeding maximum gate voltage (±20V for all parts). Switching frequency may be affected in high-speed applications.

Q: Can I use PHP191NQ06LT,127 despite obsolete status?

A: PHP191NQ06LT,127 is not recommended for new designs due to obsolete product status. Existing inventory (2,917 pcs) may support legacy production only. Superior electrical characteristics (3.7mOhm Rds On, 300W dissipation) do not override obsolescence designation. Select active alternatives for design continuity.

Q: Which substitute offers the best thermal performance?

A: HUF75344P3 provides maximum power dissipation (285W) and lowest on-state resistance (8mOhm @ 75A), resulting in lowest conduction losses. Recommended for applications with high current density or limited thermal management capability.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitutes maintain ROHS3 compliance. REACH status is "REACH Unaffected" for all parts. Export classification is EAR99 for all parts.

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