IRFZ46NLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ46NLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 53A continuous drain current in a Through Hole TO-262 package. This device is classified as Not For New Designs, indicating it has been superseded in Infineon's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued component availability, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Substiute Parts

IRFZ46NLPBF
Infineon TechnologiesIn Stock: 10147IRFZ46NLPBF Datasheet
IRFZ46NLPBF
Current Part
IRFZ48L
Vishay SiliconixIn Stock: 1005IRFZ48L Datasheet
IRFZ48L
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 53 A (Tc)
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 28A, 10V mOhm
Gate Threshold Voltage Vgs(th) (Max) 4 V @ 250µA
Gate Charge (Qg) (Max) 72 nC @ 10V
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole -
Package TO-262-3 -

Substitute Part Grouping Explanation

Substitution of the IRFZ46NLPBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must be equal to or greater than 55V
  • Continuous Drain Current (Id) must be equal to or greater than 53A
  • Gate Threshold Voltage (Vgs(th)) must be compatible at 4V maximum
  • Maximum Gate Voltage (Vgs) must accommodate ±20V operation
  • Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Criteria:

  • Mounting type must be Through Hole
  • Package must be TO-262-3 or equivalent footprint (I2PAK, TO-262AA)

Compliance Considerations:

  • RoHS status and REACH compliance should be evaluated for end-application requirements
  • Moisture Sensitivity Level (MSL) of 1 (Unlimited) is standard for this package type

The IRFZ48L from Vishay Siliconix meets the electrical and mechanical substitution criteria with a higher Vdss rating (60V) and comparable current rating (50A), maintaining functional compatibility within the specified parameter envelope.

Parameter Comparison

Parameter IRFZ46NLPBF (Main Part) IRFZ48L (Substitute) Unit
Manufacturer Infineon Technologies Vishay Siliconix -
Drain to Source Voltage (Vdss) 55 60 V
Continuous Drain Current (Id) @ 25°C 53 50 A (Tc)
Rds On (Max) @ Vgs 10V 16.5 mOhm @ 28A 18 mOhm @ 43A mOhm
Gate Threshold Voltage Vgs(th) (Max) 4 4 V @ 250µA
Gate Charge (Qg) (Max) @ 10V 72 110 nC
Input Capacitance (Ciss) (Max) @ 25V 1696 2400 pF
Vgs (Max) ±20 ±20 V
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole -
Package TO-262-3 TO-262-3 -
Product Status Not For New Designs Active -
RoHS Status ROHS3 Compliant RoHS non-compliant -

Engineering Selection Recommendations

IRFZ48L Substitution Assessment:

The IRFZ48L qualifies as a functional substitute based on the following engineering criteria:

Electrical Compatibility: The IRFZ48L exceeds the minimum Vdss requirement (60V vs. 55V required), providing additional voltage margin. The continuous drain current of 50A is within 94% of the IRFZ46NLPBF specification (53A), maintaining adequate current handling capacity. Gate threshold voltage and maximum gate voltage specifications are identical, ensuring compatible gate drive requirements.

Mechanical Compatibility: Both devices utilize the TO-262-3 package with Through Hole mounting, providing direct footprint compatibility without PCB redesign.

Compliance Consideration: The IRFZ46NLPBF is ROHS3 compliant, while the IRFZ48L is RoHS non-compliant. Applications subject to RoHS regulatory requirements must account for this compliance difference. The IRFZ48L is classified as Active product status, ensuring continued availability and manufacturing support.

Parameter Trade-offs: The IRFZ48L exhibits higher gate charge (110 nC vs. 72 nC) and input capacitance (2400 pF vs. 1696 pF), resulting in increased switching losses and gate drive power requirements. These differences are acceptable in applications where voltage margin and active product status outweigh switching efficiency considerations.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ48L directly replace the IRFZ46NLPBF without circuit modification?

A: The IRFZ48L is mechanically and electrically compatible for direct substitution in TO-262-3 footprints. No PCB layout changes are required. However, gate drive circuits must supply sufficient current to accommodate the higher gate charge specification (110 nC vs. 72 nC). Verify that existing gate drive circuitry can deliver the required charge within acceptable switching time parameters.

Q: What are the key electrical differences between these parts?

A: The IRFZ48L provides higher Vdss rating (60V vs. 55V), slightly lower continuous current (50A vs. 53A), and higher gate charge and input capacitance. These differences result in improved voltage headroom but increased switching losses. On-resistance specifications are comparable when measured at their respective rated conditions.

Q: Are there package compatibility concerns?

A: Both devices use the TO-262-3 package designation with Through Hole mounting. Physical dimensions and lead spacing are compatible. Verify that the specific variant (I2PAK or TO-262AA) matches your PCB design requirements, as these are functionally equivalent but may have minor dimensional variations.

Q: How does RoHS compliance affect substitution?

A: The IRFZ46NLPBF is ROHS3 compliant, while the IRFZ48L is RoHS non-compliant. Applications requiring RoHS certification or compliance with EU Directive 2011/65/EU must use ROHS3-compliant alternatives. Verify end-application regulatory requirements before selecting the IRFZ48L.

Q: What is the significance of "Not For New Designs" status?

A: This designation indicates the IRFZ46NLPBF has been superseded in Infineon's product portfolio. While existing inventory remains available, the manufacturer does not recommend this part for new circuit designs. The IRFZ48L, with Active status, represents the current generation equivalent and is recommended for new designs requiring similar electrical specifications.

Q: How do gate charge differences impact circuit performance?

A: Higher gate charge (110 nC vs. 72 nC) requires greater charge delivery from the gate drive circuit, increasing switching transition time and associated switching losses. In high-frequency applications, this may result in measurable efficiency reduction. Evaluate gate drive circuit current capability and thermal management requirements when substituting.

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