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IRFZ44ZSTRRPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRFZ44ZSTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 51A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is supplied in Tape & Reel (TR) packaging. With 9,470 pieces in stock, this part is classified as Not For New Designs, indicating it has been superseded in Infineon's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 51 | A (Tc) |
| On-State Resistance (Rds On) @ 31A, 10V | 13.9 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 43 | nC |
| Power Dissipation (Max) | 80 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | Surface Mount |
| Packaging Format | Tape & Reel (TR) | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IRFZ44ZSTRRPBF is determined by strict alignment of the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must be equal to or greater than 55V
- Continuous Drain Current (Id): Must be equal to or greater than 51A at 25°C
- Package Type: Must be D2PAK (TO-263-3) surface mount
- Gate Threshold Voltage (Vgs(th)): Must be compatible at specified test conditions
- Operating Temperature Range: Must encompass -55°C to 175°C
- RoHS Compliance: Must maintain ROHS3 compliance
Secondary Compatibility Parameters:
- On-State Resistance (Rds On): Lower values indicate improved performance
- Gate Charge (Qg): Lower values reduce switching losses
- Power Dissipation: Higher ratings provide thermal margin
Substitute parts are grouped into two categories: Direct Equivalents (matching or exceeding all primary criteria with minimal parameter variance) and Enhanced Alternatives (exceeding primary criteria with improved electrical performance).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| IRFZ44ZSTRRPBF | Infineon | 55 | 51 | 13.9 @ 31A, 10V | 43 @ 10V | 80 | D2PAK (TR) | Not For New Designs |
| IRFZ44SPBF | Vishay Siliconix | 60 | 50 | 28 @ 31A, 10V | 67 @ 10V | 150 | D2PAK (Tube) | Active |
| IRFZ44STRLPBF | Vishay Siliconix | 60 | 50 | 28 @ 31A, 10V | 67 @ 10V | 150 | D2PAK (TR) | Active |
| PSMN015-60BS,118 | Nexperia USA Inc. | 60 | 50 | 14.8 @ 15A, 10V | 20.9 @ 10V | 86 | D2PAK (TR) | Active |
| PSMN7R6-60BS,118 | Nexperia USA Inc. | 60 | 92 | 7.8 @ 25A, 10V | 38.7 @ 10V | 149 | D2PAK (TR) | Active |
| SQM60N06-15_GE3 | Vishay Siliconix | 60 | 56 | 15 @ 30A, 10V | 50 @ 10V | 107 | D2PAK (TR) | Active |
| STB55NF06T4 | STMicroelectronics | 60 | 50 | 18 @ 27.5A, 10V | 60 @ 10V | 110 | D2PAK (CT) | Active |
| STB60NF06LT4 | STMicroelectronics | 60 | 60 | 14 @ 30A, 10V | 66 @ 4.5V | 110 | D2PAK (CT) | Active |
| STB60NF06T4 | STMicroelectronics | 60 | 60 | 16 @ 30A, 10V | 66 @ 10V | 110 | D2PAK (CT) | Active |
| STB75NF75LT4 | STMicroelectronics | 75 | 75 | 11 @ 37.5A, 10V | 90 @ 5V | 300 | D2PAK (CT) | Active |
| STB75NF75T4 | STMicroelectronics | 75 | 80 | 11 @ 40A, 10V | 160 @ 10V | 300 | D2PAK (CT) | Active |
Engineering Selection Recommendations
Direct Equivalents (Recommended for Pin-Compatible Replacement):
IRFZ44STRLPBF and IRFZ44SPBF from Vishay Siliconix share the IRFZ44 base product number with the original IRFZ44ZSTRRPBF. Both are Active status parts with D2PAK packaging. IRFZ44STRLPBF is supplied in Tape & Reel format matching the original packaging specification. These parts maintain identical gate threshold voltage (4V @ 250µA) and maximum gate voltage (±20V), ensuring direct functional compatibility. The 60V Vdss rating provides 5V margin above the original 55V specification. Drain current ratings of 50A are within 2% of the original 51A specification.
Performance-Enhanced Alternatives (For Improved Thermal or Electrical Performance):
PSMN015-60BS,118 from Nexperia provides superior on-state resistance (14.8 mOhm versus 13.9 mOhm) with significantly lower gate charge (20.9 nC versus 43 nC), reducing switching losses. PSMN7R6-60BS,118 offers the highest drain current rating (92A) with the lowest on-state resistance (7.8 mOhm), suitable for applications requiring enhanced current handling or reduced thermal dissipation.
SQM60N06-15_GE3 from Vishay (TrenchFET® series) provides 56A continuous drain current with 15 mOhm on-state resistance and 107W power dissipation, representing a balanced performance upgrade.
STMicroelectronics STripFET™ II Series:
STB55NF06T4, STB60NF06T4, and STB60NF06LT4 are Active status alternatives with 60V Vdss and 50-60A drain current ratings. These parts are supplied in Cut Tape (CT) & Digi-Reel® format rather than standard Tape & Reel. STB60NF06LT4 features lower gate threshold voltage (1V @ 250µA) and reduced maximum gate voltage (±15V), requiring verification of gate drive circuit compatibility.
Higher Voltage Alternatives:
STB75NF75LT4 and STB75NF75T4 provide 75V Vdss with 75-80A drain current and 300W power dissipation. These parts are suitable only for applications where higher voltage rating is required and the circuit design accommodates the increased Vdss specification.
Compliance and Supply Status:
All recommended substitute parts maintain ROHS3 compliance and Unlimited Moisture Sensitivity Level (MSL 1). All are currently in Active product status with confirmed inventory availability. The original IRFZ44ZSTRRPBF is classified as Not For New Designs; therefore, new designs should select from Active status alternatives.
Frequently Asked Questions (FAQ)
Q1: Can IRFZ44SPBF directly replace IRFZ44ZSTRRPBF in existing designs?
IRFZ44SPBF is functionally compatible with IRFZ44ZSTRRPBF. Both share the IRFZ44 base product number, identical gate threshold voltage (4V @ 250µA), and maximum gate voltage (±20V). The primary difference is packaging format: IRFZ44SPBF is supplied in Tube packaging while the original is Tape & Reel. For automated assembly processes requiring Tape & Reel format, IRFZ44STRLPBF is the appropriate selection.
Q2: What is the significance of the 55V versus 60V Vdss rating difference?
The original IRFZ44ZSTRRPBF is rated for 55V maximum drain-to-source voltage. All recommended substitutes are rated for 60V or higher. A higher Vdss rating provides additional voltage margin and does not degrade performance in circuits designed for 55V operation. The device will operate safely at voltages below its rated Vdss. No circuit modification is required.
Q3: Why do some substitutes have higher on-state resistance (Rds On)?
On-state resistance varies based on semiconductor process technology and die design. IRFZ44SPBF and IRFZ44STRLPBF from Vishay exhibit higher Rds On (28 mOhm) compared to the original (13.9 mOhm). This results in increased power dissipation at high current levels. For applications sensitive to conduction losses, PSMN015-60BS,118 or PSMN7R6-60BS,118 from Nexperia provide lower Rds On values.
Q4: What does "Not For New Designs" status mean for the original part?
"Not For New Designs" indicates that Infineon has discontinued active development and marketing of the IRFZ44ZSTRRPBF. While existing inventory remains available (9,470 pieces), the manufacturer recommends selecting alternative parts for new circuit designs. This classification does not affect the reliability or performance of existing designs using this part.
Q5: Are STMicroelectronics STripFET™ II parts compatible with the original design?
STB55NF06T4, STB60NF06T4, and STB60NF06LT4 are functionally compatible alternatives with D2PAK packaging and comparable electrical ratings. However, these parts are supplied in Cut Tape (CT) & Digi-Reel® format rather than standard Tape & Reel, requiring verification of assembly equipment compatibility. Additionally, STB60NF06LT4 features different gate threshold voltage (1V @ 250µA) and maximum gate voltage (±15V), necessitating gate drive circuit verification.
Q6: What is the difference between PSMN015-60BS,118 and PSMN7R6-60BS,118?
PSMN015-60BS,118 is rated for 50A continuous drain current with 14.8 mOhm on-state resistance. PSMN7R6-60BS,118 is rated for 92A continuous drain current with 7.8 mOhm on-state resistance. The higher current rating and lower on-state resistance of PSMN7R6-60BS,118 make it suitable for high-current applications where thermal performance is critical. Both parts are supplied in Tape & Reel format and maintain ROHS3 compliance.
Q7: Can STB75NF75T4 be used as a substitute for IRFZ44ZSTRRPBF?
STB75NF75T4 has a 75V Vdss rating, which exceeds the original 55V specification. While the device will operate safely in circuits designed for 55V, the higher voltage rating is unnecessary for such applications. This part is recommended only when higher voltage capability is required by the circuit design. The higher gate charge (160 nC) may also increase switching losses compared to the original part.
Q8: What packaging considerations apply when selecting a substitute?
The original IRFZ44ZSTRRPBF is supplied in Tape & Reel (TR) format for automated assembly. IRFZ44SPBF is supplied in Tube format, requiring manual handling or reel conversion. IRFZ44STRLPBF maintains Tape & Reel format. STMicroelectronics parts are supplied in Cut Tape (CT) & Digi-Reel® format. Nexperia parts are supplied in Tape & Reel format. Verify that the selected packaging format is compatible with your assembly process and equipment.
Q9: How do gate charge differences affect circuit performance?
Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original IRFZ44ZSTRRPBF has 43 nC gate charge. PSMN015-60BS,118 has significantly lower gate charge (20.9 nC), reducing switching losses and allowing faster switching speeds. Higher gate charge values (such as STB75NF75T4 at 160 nC) increase switching losses and may require higher gate drive current. Select substitutes based on gate drive circuit capability and switching frequency requirements.
Q10: Are all substitute parts RoHS3 compliant?
All recommended substitute parts listed in this document maintain ROHS3 compliance and Unlimited Moisture Sensitivity Level (MSL 1). Compliance certifications are identical to the original IRFZ44ZSTRRPBF. No additional environmental or regulatory considerations apply when selecting from the provided substitute list.
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