IRFZ44VSTRL N-Channel 60V 55A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ44VSTRL is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the D2PAK package. This device operates at 60V drain-to-source voltage with a continuous drain current rating of 55A at 25°C case temperature and maximum power dissipation of 115W. The part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK surface mount package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	55	A (Tc)
On-State Resistance (Rds On) @ 31A, 10V	16.5	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	67	nC
Maximum Power Dissipation (Tc)	115	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Technology	Metal Oxide (MOSFET)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRFZ44VSTRL is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 55A at 25°C case temperature
Package Type: Must be D2PAK (TO-263-3) surface mount configuration
FET Type: N-Channel Metal Oxide MOSFET
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 16.5mOhm @ specified conditions are preferred
Gate Charge (Qg): Lower values reduce switching losses; values at or below 67nC @ 10V are acceptable
Power Dissipation: Must support minimum 115W at case temperature
Gate-Source Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage specification

Substitute parts are grouped by their ability to meet or exceed these parameters while maintaining full electrical and mechanical compatibility with the original IRFZ44VSTRL specification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	RoHS
IRFZ44VSTRL	Infineon	60	55 (Tc)	16.5 @ 31A, 10V	67 @ 10V	115	Obsolete	Non-compliant
BUK7613-60E,118	Nexperia	60	58 (Tc)	13 @ 15A, 10V	22.9 @ 10V	96	Active	ROHS3
FDB13AN06A0	onsemi	60	62 (Tc)	13.5 @ 62A, 10V	29 @ 10V	115	Active	ROHS3
IRFZ44SPBF	Vishay Siliconix	60	50 (Tc)	28 @ 31A, 10V	67 @ 10V	150	Active	ROHS3
IRFZ44STRLPBF	Vishay Siliconix	60	50 (Tc)	28 @ 31A, 10V	67 @ 10V	150	Active	ROHS3
PSMN015-60BS,118	Nexperia	60	50 (Tc)	14.8 @ 15A, 10V	20.9 @ 10V	86	Active	ROHS3
RSJ400N06FRATL	Rohm Semiconductor	60	40 (Ta)	16 @ 40A, 10V	52 @ 10V	50	Active	ROHS3
STB55NF06LT4	STMicroelectronics	60	55 (Tc)	18 @ 27.5A, 10V	37 @ 4.5V	95	Active	ROHS3
STB55NF06T4	STMicroelectronics	60	50 (Tc)	18 @ 27.5A, 10V	60 @ 10V	110	Active	ROHS3
STB60NF06T4	STMicroelectronics	60	60 (Tc)	16 @ 30A, 10V	66 @ 10V	110	Active	ROHS3

Engineering Selection Recommendations

Tier 1 - Direct Electrical Equivalents (Recommended for Primary Selection):

The following parts meet or exceed all electrical specifications of the IRFZ44VSTRL while maintaining active product status and full RoHS3 compliance:

STB60NF06T4 (STMicroelectronics) provides the closest electrical match with 60A continuous drain current, matching the original 55A specification with margin. Operating temperature range extends to -65°C minimum. Power dissipation of 110W approaches the original 115W specification. On-state resistance of 16mOhm @ 30A, 10V is comparable to the original 16.5mOhm specification. Gate charge of 66nC @ 10V closely matches the original 67nC. This part carries STripFET™ II series designation and is actively manufactured.

STB55NF06LT4 (STMicroelectronics) matches the original 55A continuous drain current specification exactly. Power dissipation of 95W is slightly lower than the original 115W but remains within acceptable thermal design margins. On-state resistance of 18mOhm @ 27.5A, 10V is marginally higher than the original specification. Gate charge of 37nC @ 4.5V is significantly lower, reducing switching losses. This part carries STripFET™ II series designation and is actively manufactured.

FDB13AN06A0 (onsemi) provides 62A continuous drain current, exceeding the original 55A specification. Power dissipation of 115W matches the original specification exactly. On-state resistance of 13.5mOhm @ 62A, 10V is lower than the original, indicating improved efficiency. Gate charge of 29nC @ 10V is significantly lower. This part carries PowerTrench® series designation and is actively manufactured with high inventory availability.

Tier 2 - Acceptable Substitutes (Secondary Selection):

BUK7613-60E,118 (Nexperia) provides 58A continuous drain current, exceeding the original 55A specification. On-state resistance of 13mOhm @ 15A, 10V is lower than the original. Power dissipation of 96W is lower than the original 115W specification. Gate charge of 22.9nC @ 10V is significantly lower. This part carries TrenchMOS™ series designation, is actively manufactured, and includes AEC-Q101 automotive qualification.

PSMN015-60BS,118 (Nexperia) provides 50A continuous drain current, which is below the original 55A specification but may be acceptable for applications with reduced current requirements. On-state resistance of 14.8mOhm @ 15A, 10V is lower than the original. Power dissipation of 86W is lower than the original specification. Gate charge of 20.9nC @ 10V is significantly lower. This part is actively manufactured with high inventory availability.

Tier 3 - Limited Substitutes (Application-Dependent Selection):

IRFZ44SPBF and IRFZ44STRLPBF (Vishay Siliconix) provide 50A continuous drain current, which is below the original 55A specification. On-state resistance of 28mOhm @ 31A, 10V is significantly higher than the original 16.5mOhm, resulting in increased power dissipation and heat generation. Power dissipation of 150W exceeds the original specification. These parts are actively manufactured and RoHS3 compliant but are suitable only for applications where the reduced current rating and higher on-state resistance are acceptable.

RSJ400N06FRATL (Rohm Semiconductor) provides 40A continuous drain current, which is below the original 55A specification. Power dissipation of 50W is significantly lower than the original 115W specification. This part carries AEC-Q101 automotive qualification and is actively manufactured but is suitable only for applications with substantially reduced current and power requirements.

Compliance and Certification Considerations:

All substitute parts listed carry RoHS3 compliance status, meeting environmental regulatory requirements. The original IRFZ44VSTRL is RoHS non-compliant. BUK7613-60E,118 and RSJ400N06FRATL include AEC-Q101 automotive qualification, suitable for automotive and high-reliability applications. All parts maintain the D2PAK surface mount package format, ensuring mechanical compatibility with existing PCB designs.

Frequently Asked Questions (FAQ)

Q1: Can the IRFZ44VSTRL be directly replaced with any of these substitute parts without circuit modification?

A: Direct replacement is possible only with parts that meet or exceed all electrical specifications. STB60NF06T4, STB55NF06LT4, and FDB13AN06A0 are direct electrical equivalents and can be substituted without circuit modification. Parts with lower current ratings (IRFZ44SPBF, PSMN015-60BS,118, RSJ400N06FRATL) or higher on-state resistance may require thermal design review and are application-dependent.

Q2: What is the significance of the difference between Tc (case temperature) and Ta (ambient temperature) current ratings?

A: Continuous drain current ratings specified at Tc (case temperature) assume the device case is maintained at 25°C through adequate heat sinking. Ratings specified at Ta (ambient temperature) assume operation in free air without active cooling. For the IRFZ44VSTRL rated at 55A (Tc), the actual current capacity depends on thermal management. Substitute parts with Tc ratings are preferred for consistent thermal performance.

Q3: Why do some substitute parts have lower gate charge (Qg) values?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge values reduce switching losses and allow faster switching speeds, improving overall circuit efficiency. Parts like FDB13AN06A0 (29nC) and BUK7613-60E,118 (22.9nC) offer improved switching performance compared to the original IRFZ44VSTRL (67nC), though this does not affect DC operating characteristics.

Q4: Is the D2PAK package identical across all substitute parts?

A: All substitute parts listed use the D2PAK (TO-263-3) surface mount package format with 2 leads plus tab configuration. Package dimensions and pin assignments are standardized, ensuring mechanical compatibility with existing PCB layouts. However, thermal performance may vary slightly between manufacturers due to internal die design differences.

Q5: What is the impact of higher on-state resistance (Rds On) on circuit performance?

A: On-state resistance determines the voltage drop across the MOSFET when conducting current. Higher Rds On values result in increased power dissipation (P = I²R) and heat generation. The original IRFZ44VSTRL specifies 16.5mOhm @ 31A, 10V. Substitute parts with significantly higher values (e.g., IRFZ44SPBF at 28mOhm) will generate more heat and require enhanced thermal management.

Q6: Can parts with lower power dissipation ratings be used as substitutes?

A: Parts with lower power dissipation ratings (e.g., RSJ400N06FRATL at 50W versus original 115W) can be used only if the actual circuit power dissipation remains below the substitute part's rating. This requires detailed thermal analysis of the specific application. Lower power ratings typically indicate reduced current capacity or higher on-state resistance.

Q7: What does RoHS3 compliance mean for component selection?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All substitute parts listed are RoHS3 compliant, whereas the original IRFZ44VSTRL is RoHS non-compliant. RoHS3 compliance is required for most commercial and industrial applications and is mandatory for European market distribution.

Q8: Are automotive-qualified parts (AEC-Q101) necessary for all applications?

A: AEC-Q101 qualification is required only for automotive and high-reliability applications. BUK7613-60E,118 and RSJ400N06FRATL carry this qualification. For general industrial and consumer applications, AEC-Q101 qualification is not necessary, though it indicates enhanced quality and reliability testing.

Q9: How should thermal design be adjusted when substituting with parts having different power dissipation ratings?

A: Thermal design must be based on the actual power dissipation of the substitute part in the specific circuit. If the substitute part has lower power dissipation rating than the original, verify that circuit operating conditions do not exceed the substitute part's thermal limits. If higher power dissipation is expected, ensure adequate heat sinking is provided. Consult the substitute part's datasheet for thermal resistance specifications (θJC, θJA).

Q10: What inventory considerations should be made when selecting a substitute part?

A: Inventory availability affects lead time and cost. FDB13AN06A0 (15,265 pcs), STB55NF06T4 (18,852 pcs), and PSMN015-60BS,118 (12,675 pcs) have high inventory levels, ensuring rapid availability. Parts with lower inventory (STB60NF06T4 at 2,373 pcs, STB55NF06LT4 at 1,311 pcs) may have longer lead times. Inventory status should be verified with suppliers before final component selection.

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