IRFZ44S N-Channel MOSFET 60V 50A Equivalent & Substitute Parts

Part Overview

The IRFZ44S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 50A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing production and maintenance applications. The IRFZ44S serves in switching and amplification circuits where N-Channel MOSFET functionality at 60V and 50A specifications is required.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
Rds On (Max) @ Id, Vgs	28	mOhm @ 31A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4	V @ 250µA
Gate Charge (Qg) (Max)	67	nC @ 10V
Input Capacitance (Ciss) (Max)	1900	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 150 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263-3, D2PAK	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ44S is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 60V or higher
Continuous Drain Current (Id): 50A or higher
Gate Threshold Voltage (Vgs(th)): 4V or lower
Package: TO-263-3 / D2PAK surface mount configuration
Operating Temperature Range: -55°C to 175°C or wider
Vgs (Max): ±20V

Secondary Compatibility Parameters:

Rds On (Max): 28 mOhm or lower preferred for thermal performance
Gate Charge (Qg): 67 nC or lower for switching efficiency
Input Capacitance (Ciss): 1900 pF or lower for gate drive requirements

Substitute parts are grouped into two categories:

Category 1: Parametric Equivalents — Parts meeting all primary criteria with identical or superior electrical specifications and active product status.

Category 2: Functional Substitutes — Parts meeting primary criteria with minor deviations in secondary parameters, suitable for applications where the IRFZ44S specifications are not fully saturated.

Parameter Comparison

Parameter	IRFZ44S	IRFZ44SPBF	IPB081N06L3GATMA1	IPB090N06N3GATMA1	IRFZ44ESTRLPBF	IRFZ44NSTRLPBF	IRFZ44ZSTRRPBF	PSMN015-60BS,118	STB55NF06T4
Vdss (V)	60	60	60	60	60	55	55	60	60
Id @ 25°C (A)	50	50	50	50	48	49	51	50	50
Rds On (Max) (mOhm)	28	28	8.1	9	23	17.5	13.9	14.8	18
Vgs(th) (Max) (V)	4	4	2.2	4	4	4	4	4	4
Qg (Max) (nC)	67	67	29	36	60	63	43	20.9	60
Ciss (Max) (pF)	1900	1900	4900	2900	1360	1470	1420	1220	1300
Power Dissipation (Tc) (W)	150	150	79	71	110	94	80	86	110
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3	TO-263-3	PG-TO263-3	PG-TO263-3	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Not For New Designs	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status, ROHS3 Compliant):

IRFZ44SPBF — Vishay Siliconix parametric equivalent with identical electrical specifications. Active product status. Direct replacement with identical Rds On, gate charge, and input capacitance. Recommended for applications requiring exact performance matching.
STB55NF06T4 — STMicroelectronics STripFET™ II series. Meets all primary substitution criteria with 60V Vdss and 50A Id. Superior Rds On performance (18 mOhm vs. 28 mOhm) reduces thermal dissipation. Active product status with ROHS3 compliance.
PSMN015-60BS,118 — Nexperia USA Inc. N-Channel MOSFET. Meets all primary criteria with superior Rds On (14.8 mOhm) and lowest gate charge (20.9 nC). Active product status with ROHS3 compliance. Optimal for applications prioritizing switching efficiency.
IRFZ44NSTRLPBF — Infineon Technologies HEXFET® series. Meets primary criteria with Vdss of 55V (acceptable for 60V-rated applications with margin reduction) and 49A Id. Superior Rds On (17.5 mOhm) and lower gate charge (63 nC). Active product status with ROHS3 compliance.

Secondary Substitutes (Active Status, Acceptable for Specific Applications):

IPB081N06L3GATMA1 — Infineon Technologies OptiMOS™ series. Meets primary criteria with superior Rds On (8.1 mOhm) and lowest gate charge (29 nC). Higher input capacitance (4900 pF) requires gate drive circuit evaluation. Active product status.
IPB090N06N3GATMA1 — Infineon Technologies OptiMOS™ series. Meets primary criteria with superior Rds On (9 mOhm) and lower gate charge (36 nC). Moderate input capacitance (2900 pF). Active product status.

Not Recommended for New Designs:

IRFZ44ESTRLPBF — Product status "Not For New Designs" with reduced Id (48A vs. 50A)
IRFZ44ZSTRRPBF — Product status "Not For New Designs" with reduced Vdss (55V vs. 60V)

Frequently Asked Questions (FAQ)

Q: Can IRFZ44SPBF be used as a direct replacement for IRFZ44S?

A: Yes. IRFZ44SPBF is a parametric equivalent with identical electrical specifications across all measured parameters: 60V Vdss, 50A Id, 28 mOhm Rds On, 4V Vgs(th), 67 nC gate charge, and 1900 pF input capacitance. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant). Packaging is identical TO-263-3 D2PAK.

Q: What is the significance of Rds On differences between substitute parts?

A: Rds On (on-state resistance) directly affects power dissipation and thermal performance. Lower Rds On values reduce I²R losses. For example, PSMN015-60BS,118 at 14.8 mOhm dissipates approximately 48% less power than IRFZ44S at 28 mOhm under identical current conditions. Selection depends on thermal budget and switching frequency requirements.

Q: Are parts with 55V Vdss acceptable substitutes for the 60V IRFZ44S?

A: Parts with 55V Vdss (IRFZ44NSTRLPBF, IRFZ44ZSTRRPBF) meet the primary substitution criterion of 60V or higher only if the application circuit operates at maximum 55V. These parts are acceptable only when system voltage margins confirm operation below 55V. For applications requiring full 60V rating, select parts with 60V or higher Vdss.

Q: What is the impact of higher input capacitance on gate drive circuits?

A: Input capacitance (Ciss) affects gate charge requirements and switching speed. IPB081N06L3GATMA1 with 4900 pF Ciss requires approximately 2.6 times more gate charge energy than IRFZ44S at 1900 pF. Gate drive circuits must supply sufficient current to charge this capacitance within required switching time. Verify gate driver specifications before selecting high-Ciss alternatives.

Q: Why is RoHS compliance important for IRFZ44S substitution?

A: The IRFZ44S is RoHS non-compliant. All recommended substitutes are ROHS3 compliant, meeting regulatory requirements for new product designs and manufacturing in regions with RoHS directives. Non-compliant parts may face procurement restrictions or supply chain limitations.

Q: Can IPB081N06L3GATMA1 and IPB090N06N3GATMA1 be used interchangeably?

A: Both are Infineon OptiMOS™ series parts meeting primary substitution criteria. IPB081N06L3GATMA1 offers superior Rds On (8.1 mOhm vs. 9 mOhm) and lower gate charge (29 nC vs. 36 nC), but with higher input capacitance (4900 pF vs. 2900 pF). Selection depends on whether gate drive capability or thermal performance is the limiting factor in the application.

Q: What packaging considerations apply to D2PAK and PG-TO263-3 variants?

A: D2PAK and PG-TO263-3 are both TO-263-3 package variants with identical pinout and mechanical dimensions. Both feature 2 leads plus tab configuration suitable for surface mount assembly. Thermal performance and PCB layout considerations are equivalent. Parts are mechanically interchangeable.

Q: Is STB55NF06T4 suitable for high-frequency switching applications?

A: STB55NF06T4 exhibits gate charge of 60 nC (comparable to IRFZ44S at 67 nC) and input capacitance of 1300 pF (lower than IRFZ44S at 1900 pF). These characteristics support high-frequency operation. Superior Rds On (18 mOhm) reduces switching losses. Suitability depends on specific frequency and thermal requirements of the application.

Q: What is the inventory status for substitute parts?

A: IRFZ44SPBF (2300 pcs), IPB081N06L3GATMA1 (14919 pcs), IPB090N06N3GATMA1 (13896 pcs), PSMN015-60BS,118 (12675 pcs), and STB55NF06T4 (18852 pcs) are available in stock. IRFZ44NSTRLPBF has the highest inventory at 21134 pcs. Inventory levels support production requirements for most applications.

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