IRFZ44L N-Channel 60V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ44L is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 50A continuous drain current. The device is packaged in a TO-262-3 (I2PAK) through-hole configuration and is currently in active product status. The IRFZ44L is suitable for high-current switching applications requiring compact thermal performance in a through-hole package format. Equivalent and substitute parts are identified based on matching electrical specifications (Vdss, Id, Rds(on), Vgs(th)) and compatible package types that maintain circuit functionality and thermal management requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-State Resistance (Rds(on)) @ Id, Vgs	28 mOhm @ 31A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	67	nC @ 10V
Input Capacitance (Ciss) @ Vds	1900	pF @ 25V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-262-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRFZ44L are selected based on the following electrical and mechanical criteria:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 60V (exact match required)
Continuous Drain Current (Id): 48A to 55A (within acceptable operating range)
Gate Threshold Voltage (Vgs(th)): 3V to 4V @ 250µA (compatible gate drive requirements)
On-State Resistance (Rds(on)): 18 mOhm to 30 mOhm @ 10V (acceptable conduction losses)
Operating Temperature Range: Minimum -55°C to 175°C (thermal compatibility)
Mounting Type: Through Hole (mechanical compatibility)

Package Compatibility: Substitute parts are available in TO-220-3 and TO-220AB packages, which are mechanically compatible with the original TO-262-3 package in through-hole PCB applications. Both package types provide equivalent thermal and electrical performance for the specified current and voltage ratings.

Compliance Considerations: RoHS3 compliance status and product lifecycle status (Active vs. Obsolete vs. Not For New Designs) are documented to support long-term design sustainability and regulatory requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds(on) (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Package	Status
IRFZ44L	Vishay Siliconix	60	50	28 @ 31A, 10V	4 @ 250µA	67 @ 10V	1900 @ 25V	150 (Tc)	-55 to 175	TO-262-3	Active
FDP55N06	onsemi	60	55	22 @ 27.5A, 10V	4 @ 250µA	37 @ 10V	1510 @ 25V	114 (Tc)	-55 to 150	TO-220-3	Obsolete
HUF76423P3	onsemi	60	35	30 @ 35A, 10V	3 @ 250µA	34 @ 10V	1060 @ 25V	85 (Tc)	-55 to 175	TO-220-3	Active
IRFZ44EPBF	Infineon Technologies	60	48	23 @ 29A, 10V	4 @ 250µA	60 @ 10V	1360 @ 25V	110 (Tc)	-55 to 175	TO-220AB	Not For New Designs
NDP6060	onsemi	60	48	25 @ 24A, 10V	4 @ 250µA	70 @ 10V	1800 @ 25V	100 (Tc)	-65 to 175	TO-220-3	Active
RFP50N06	Harris Corporation	60	50	22 @ 50A, 10V	4 @ 250µA	150 @ 20V	2020 @ 25V	131 (Tc)	-55 to 175	TO-220-3	Obsolete
STP45NF06	STMicroelectronics	60	38	28 @ 19A, 10V	4 @ 250µA	58 @ 10V	980 @ 25V	80 (Tc)	-55 to 175	TO-220AB	Active
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A, 10V	4 @ 250µA	60 @ 10V	1300 @ 25V	110 (Tc)	-55 to 175	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute (Direct Replacement): STP55NF06 (STMicroelectronics) is the preferred substitute for the IRFZ44L. This device matches the 60V/50A electrical specification exactly, provides superior on-state resistance (18 mOhm vs. 28 mOhm), and is in active product status with RoHS3 compliance. The TO-220-3 package is mechanically compatible with through-hole PCB layouts. Operating temperature range (-55°C to 175°C) matches the original specification.

Secondary Substitutes (Functional Equivalents): NDP6060 (onsemi) and IRFZ44EPBF (Infineon Technologies) provide functional equivalence with 48A continuous drain current, acceptable on-state resistance, and compatible thermal performance. NDP6060 is in active status with extended temperature range (-65°C to 175°C). IRFZ44EPBF is marked "Not For New Designs" and should be used only for legacy system maintenance.

Current-Limited Substitutes: HUF76423P3 (onsemi) and STP45NF06 (STMicroelectronics) are suitable for applications where continuous drain current requirements do not exceed 35A and 38A respectively. Both devices are in active status with RoHS3 compliance and full operating temperature range support.

Obsolete Parts (Not Recommended for New Designs): FDP55N06 and RFP50N06 are marked obsolete and should not be selected for new designs. These parts are retained in the substitute list for reference in legacy system maintenance only.

Compliance Status: All active substitute parts (STP55NF06, NDP6060, HUF76423P3, STP45NF06) carry RoHS3 compliance certification. The original IRFZ44L is RoHS non-compliant; substitution with RoHS3-compliant alternatives is recommended for new designs subject to regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ44L be directly replaced with STP55NF06? A: Yes. Both devices are rated for 60V/50A operation with compatible gate threshold voltage (4V @ 250µA), operating temperature range (-55°C to 175°C), and through-hole mounting. STP55NF06 provides superior on-state resistance (18 mOhm vs. 28 mOhm), resulting in lower conduction losses. The TO-220-3 package is mechanically compatible with standard through-hole PCB layouts.

Q: What is the difference between TO-262-3 and TO-220-3 packages? A: Both are through-hole packages with three leads (Gate, Drain, Source). TO-262-3 (I2PAK) provides a more compact footprint with integrated thermal tab for improved heat dissipation. TO-220-3 is a standard industry package with larger lead spacing. Pin assignments and electrical function are identical. PCB layout modifications may be required to accommodate the different package dimensions.

Q: Can I use HUF76423P3 if my application requires 50A continuous current? A: No. HUF76423P3 is rated for 35A continuous drain current, which is below the 50A requirement of the IRFZ44L. Using this device in a 50A application will result in thermal stress and potential device failure. Select a substitute rated for 48A or higher continuous current (STP55NF06, NDP6060, RFP50N06, or FDP55N06).

Q: Why is IRFZ44EPBF marked "Not For New Designs"? A: IRFZ44EPBF is in the product lifecycle phase designated "Not For New Designs," indicating that the manufacturer is discontinuing active support and recommending alternative parts for new circuit designs. This part may be used for legacy system maintenance and repair, but should not be selected for new product development.

Q: Are all substitute parts RoHS compliant? A: No. The original IRFZ44L is RoHS non-compliant. Active substitute parts (STP55NF06, NDP6060, HUF76423P3, STP45NF06) are RoHS3 compliant. Obsolete parts (FDP55N06, RFP50N06) carry RoHS3 compliance but are not recommended for new designs. Verify compliance requirements for your specific application before part selection.

Q: What is the significance of on-state resistance (Rds(on)) differences between substitutes? A: On-state resistance directly affects conduction losses and heat generation. Lower Rds(on) values reduce power dissipation and improve thermal performance. STP55NF06 (18 mOhm) dissipates less heat than IRFZ44L (28 mOhm) at equivalent current levels. For high-current applications, selecting a substitute with lower Rds(on) improves efficiency and reduces cooling requirements.

Q: Can I use NDP6060 in applications with extended low-temperature operation? A: Yes. NDP6060 is rated for -65°C to 175°C operating temperature range, which extends the lower temperature limit by 10°C compared to IRFZ44L (-55°C to 175°C). This extended range is suitable for applications requiring operation in extreme cold environments.

Q: What gate drive voltage is required for all substitute parts? A: All substitute parts are specified with 10V gate drive voltage for maximum on-state resistance performance. Gate threshold voltage (Vgs(th)) is 3V to 4V @ 250µA across all parts, indicating that gate drive circuits designed for the IRFZ44L are compatible with all listed substitutes without modification.

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