IRFZ44ESTRRPBF N-Channel 60V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ44ESTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 48A continuous drain current in the D2PAK surface mount package. This device is classified as Obsolete, indicating it is no longer in active production. The HEXFET® series design provides 110W maximum power dissipation and operates across the temperature range of -55°C to 175°C.

Due to its obsolete status, alternative N-Channel MOSFETs with equivalent or superior electrical characteristics are necessary for new designs and ongoing production requirements. Suitable substitutes maintain compatibility with the D2PAK (TO-263-3) package footprint while meeting or exceeding the voltage, current, and thermal specifications of the original part.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	48	A (Tc)
On-State Resistance (Rds On) @ 29A, 10V	23	mOhm
Gate-to-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	60	nC
Maximum Power Dissipation (Tc)	110	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ44ESTRRPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 60V. Parts rated at 100V or higher provide additional voltage margin and are acceptable.

Current Rating: Substitute parts must support a continuous drain current (Id) of at least 48A at 25°C. Parts rated at 50A or higher satisfy this requirement.

Package Compatibility: All substitutes must use the D2PAK (TO-263-3) surface mount package to ensure PCB footprint compatibility without redesign.

On-State Resistance (Rds On): The maximum Rds On specification at the rated gate voltage (10V) should not significantly exceed 23mOhm to maintain similar power dissipation characteristics.

Temperature Range: Operating temperature range must span -55°C to 175°C minimum.

Compliance: All substitutes must be RoHS3 compliant and REACH unaffected to meet regulatory requirements.

Substitute parts are grouped into two categories: Parametric Equivalents (matching voltage and current ratings within the same package) and Manufacturer Recommended Alternatives (higher voltage or current ratings that provide enhanced performance margins).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Product Status	Package
IRFZ44ESTRRPBF	Infineon	60	48	23 @ 29A	60	110	Obsolete	D2PAK
IRFZ44ESTRLPBF	Infineon	60	48	23 @ 29A	60	110	Not For New Designs	D2PAK
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A	60	110	Active	D2PAK
HUF76429S3ST	onsemi	60	47	22 @ 47A	46	110	Active	D2PAK
IRFZ44SPBF	Vishay Siliconix	60	50	28 @ 31A	67	150	Active	D2PAK
IRFZ44STRLPBF	Vishay Siliconix	60	50	28 @ 31A	67	150	Active	D2PAK
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A	20.9	86	Active	D2PAK
STB55NF06LT4	STMicroelectronics	60	55	18 @ 27.5A	37	95	Active	D2PAK
FQB50N06TM	onsemi	60	50	22 @ 25A	41	120	Obsolete	D2PAK
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A	64	100	Active	D2PAK

Engineering Selection Recommendations

For Direct Replacement (Same Electrical Class):

The STB55NF06T4 (STMicroelectronics) is the primary recommended substitute. It maintains the 60V voltage rating, exceeds the 48A current requirement at 50A, and delivers superior on-state resistance (18mOhm vs. 23mOhm). The part is Active status and RoHS3 compliant. Gate charge and power dissipation specifications are equivalent to the original part.

The HUF76429S3ST (onsemi) provides an alternative with Active product status. Current rating of 47A closely matches the original 48A specification, with improved on-state resistance (22mOhm) and lower gate charge (46nC vs. 60nC), resulting in faster switching characteristics.

For Enhanced Performance (Higher Current or Voltage Rating):

The IPB50N10S3L16ATMA1 (Infineon) offers a 100V voltage rating with 50A current capability, providing additional voltage margin for applications with transient overvoltage conditions. On-state resistance is superior at 15.4mOhm. This part is Active status and suitable for new designs.

The PSMN015-60BS,118 (Nexperia USA Inc.) maintains the 60V rating with 50A current and delivers the lowest on-state resistance (14.8mOhm) among 60V alternatives, reducing power dissipation in high-current applications. Active product status supports long-term availability.

For Existing Inventory Compatibility:

The IRFZ44ESTRLPBF (Infineon) is a parametric equivalent with identical electrical specifications. However, its "Not For New Designs" status indicates limited future availability. Use only for replacement of existing assemblies.

The IRFZ44SPBF and IRFZ44STRLPBF (Vishay Siliconix) are Active alternatives with 50A current rating. Higher on-state resistance (28mOhm) and gate charge (67nC) result in increased power dissipation and switching losses compared to the original part, but remain functionally compatible.

Avoid:

FQB50N06TM (onsemi) is Obsolete and should not be selected for new designs despite meeting electrical requirements.

Frequently Asked Questions (FAQ)

Q: Can I use a 100V-rated MOSFET as a substitute for the 60V IRFZ44ESTRRPBF?

A: Yes. The IPB50N10S3L16ATMA1 (100V, 50A) is a valid substitute. Higher voltage ratings provide additional safety margin against transient overvoltage events. The D2PAK package footprint remains identical, requiring no PCB modifications. Verify that the application circuit does not rely on the lower voltage threshold for specific circuit behavior.

Q: What is the difference between IRFZ44ESTRRPBF and IRFZ44ESTRLPBF?

A: Both parts are electrically identical with 60V, 48A specifications and 23mOhm on-state resistance. The primary difference is packaging: ESTRRPBF uses standard reel packaging, while ESTRLPBF uses tape and reel (TR) format. ESTRLPBF is marked "Not For New Designs," indicating Infineon is phasing out this variant. For new designs, select IRFZ44ESTRRPBF or transition to an Active alternative such as STB55NF06T4.

Q: Why do some substitutes have lower on-state resistance than the original part?

A: Advances in MOSFET manufacturing technology have reduced on-state resistance in newer devices. Lower Rds On (such as 14.8mOhm in PSMN015-60BS,118 vs. 23mOhm in IRFZ44ESTRRPBF) decreases power dissipation and heat generation, improving overall circuit efficiency. This is a beneficial characteristic and does not affect compatibility.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic components in the European Union and other regulated markets.

Q: Can I use IRFZ44SPBF or IRFZ44STRLPBF as direct replacements?

A: Yes, both are functionally compatible. However, their higher on-state resistance (28mOhm vs. 23mOhm) and gate charge (67nC vs. 60nC) result in increased power dissipation and slower switching compared to the original part. Use these substitutes only if superior current rating (50A vs. 48A) or higher power dissipation capability (150W vs. 110W) is beneficial to your application. Both parts are Active status and suitable for new designs.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as 37nC in STB55NF06LT4) enables faster switching with lower gate drive power requirements. Higher gate charge (such as 67nC in IRFZ44SPBF) requires more gate drive energy but may provide improved noise immunity in certain applications. Select based on your gate driver circuit capabilities and switching frequency requirements.

Q: Is the D2PAK package identical across all substitute parts?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package with 2 leads plus tab configuration. PCB footprints are mechanically and electrically compatible without modification. Verify thermal management provisions (tab soldering and heat sink contact) remain adequate for the selected substitute's power dissipation rating.

Q: Which substitute offers the best overall performance for new designs?

A: The STB55NF06T4 (STMicroelectronics) provides optimal balance: Active product status ensures long-term availability, 60V/50A ratings exceed original specifications, on-state resistance (18mOhm) is superior to the original part, and power dissipation (110W) matches the original. Gate charge (60nC) is identical to the original, simplifying gate driver design.

Q: Can I mix different substitute parts in the same production batch?

A: Electrical compatibility is maintained across all listed substitutes due to matching voltage and current ratings. However, differences in on-state resistance, gate charge, and power dissipation may affect circuit performance characteristics such as switching speed and thermal behavior. For consistency, select a single substitute part number for a given production batch. Document the substitution in design records and bill of materials.

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