IRFZ44ESTRLPBF N-Channel 60V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ44ESTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 48A continuous drain current in the D2PAK surface mount package. This device is part of the HEXFET® series and is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Finding equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	48	A
On-Resistance (Rds On) @ 29A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	60	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ44ESTRLPBF is determined by the following critical parameters:

Voltage Class: All substitute parts must maintain a Vdss rating of 60V or higher to ensure safe operation in the same circuit topology.

Current Rating: Substitute parts must support a continuous drain current (Id) of 48A or greater at 25°C to handle the same load conditions.

On-Resistance (Rds On): The maximum on-resistance at rated conditions must not significantly exceed 23 mOhm to maintain thermal performance and power efficiency within acceptable limits.

Package Compatibility: All substitutes must use the TO-263-3 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

Temperature Range: Operating temperature range must span -55°C to 175°C to support the same environmental specifications.

Compliance: All parts must be RoHS3 compliant and REACH unaffected to meet regulatory requirements.

Substitute parts are grouped into two categories:

Category A – Direct Voltage/Current Class Substitutes (60V, 48A–50A): Parts with identical or marginally higher current ratings and matching voltage class, suitable for direct replacement with minimal circuit re-evaluation.

Category B – Enhanced Performance Substitutes (60V, 50A–55A): Parts with higher current ratings or improved on-resistance characteristics, suitable for applications requiring additional thermal margin or performance headroom.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRFZ44ESTRLPBF	Infineon	60	48	23 @ 29A, 10V	60 @ 10V	110	Not For New Designs	D2PAK
IRFZ44SPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	67 @ 10V	150	Active	D2PAK
IRFZ44STRLPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	67 @ 10V	150	Active	D2PAK
IRFZ48SPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	110 @ 10V	190	Active	D2PAK
FQB50N06TM	onsemi	60	50	22 @ 25A, 10V	41 @ 10V	120	Obsolete	D2PAK
HUF76429S3ST	onsemi	60	47	22 @ 47A, 10V	46 @ 10V	110	Active	D2PAK
STB55NF06LT4	STMicroelectronics	60	55	18 @ 27.5A, 10V	37 @ 4.5V	95	Active	D2PAK
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	60 @ 10V	110	Active	D2PAK
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A, 10V	20.9 @ 10V	86	Active	D2PAK
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	Active	D2PAK

Engineering Selection Recommendations

For Direct Replacement (Same Electrical Performance):

Select STB55NF06T4 (STMicroelectronics) or HUF76429S3ST (onsemi) as primary alternatives. Both maintain 60V voltage class, support 47–50A continuous drain current, and are classified as Active products. STB55NF06T4 offers identical power dissipation (110W) and gate charge (60 nC) to the IRFZ44ESTRLPBF, making it the closest functional equivalent. HUF76429S3ST provides comparable on-resistance (22 mOhm) and is part of the active UltraFET™ series.

For Enhanced Thermal Performance:

Select PSMN015-60BS,118 (Nexperia USA Inc.) or IRFZ48SPBF (Vishay Siliconix). PSMN015-60BS,118 delivers the lowest on-resistance (14.8 mOhm) and gate charge (20.9 nC), reducing switching losses and thermal stress. IRFZ48SPBF provides superior power dissipation capability (190W) with lower on-resistance (18 mOhm), suitable for high-current or thermally demanding applications.

For Higher Voltage Margin (Design Flexibility):

Select IPB50N10S3L16ATMA1 (Infineon, OptiMOS™ series) if the circuit can tolerate 100V Vdss. This part offers improved on-resistance (15.4 mOhm) and is an Active product from Infineon, providing long-term supply assurance and design continuity within the same manufacturer ecosystem.

Avoid:

FQB50N06TM (onsemi) is classified as Obsolete and should not be selected for new applications or long-term supply requirements, despite adequate electrical specifications.

Frequently Asked Questions (FAQ)

Q1: Can I use a substitute part with a higher Vdss rating (e.g., 100V instead of 60V)?

A: Yes. A higher Vdss rating provides additional voltage margin and does not compromise circuit operation. The IPB50N10S3L16ATMA1 (100V) is electrically compatible with 60V circuit designs. However, verify that the higher voltage rating does not introduce unintended performance changes in gate drive circuits or switching characteristics specific to your application.

Q2: What is the significance of on-resistance (Rds On) differences between substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values (e.g., PSMN015-60BS,118 at 14.8 mOhm) reduce I²R losses and heat generation, improving efficiency. Higher Rds On values (e.g., IRFZ44SPBF at 28 mOhm) increase power dissipation and may require enhanced thermal management. Select based on your thermal budget and efficiency requirements.

Q3: Are all substitute parts pin-compatible with the IRFZ44ESTRLPBF?

A: Yes. All listed substitutes use the TO-263-3 (D2PAK) package with identical pin configuration: Gate, Drain, and Source. Direct PCB replacement is possible without layout modifications.

Q4: Does gate charge (Qg) affect my circuit design?

A: Gate charge influences gate drive circuit design and switching speed. Higher Qg values (e.g., IRFZ48SPBF at 110 nC) require more gate current or longer switching times. Lower Qg values (e.g., PSMN015-60BS,118 at 20.9 nC) enable faster switching with lower gate drive power. Verify compatibility with your gate driver specifications.

Q5: Why is the IRFZ44ESTRLPBF marked "Not For New Designs"?

A: This status indicates Infineon has discontinued active development and recommends migration to newer products. Existing inventory remains available, but long-term supply is not guaranteed. For new designs, select an Active-status substitute such as STB55NF06T4, HUF76429S3ST, or PSMN015-60BS,118.

Q6: Can I substitute with a part rated for lower current (e.g., 40A instead of 48A)?

A: No. Substitutes must support the original 48A continuous drain current or higher. Using a lower-rated part risks thermal runaway, device failure, or circuit malfunction under full-load conditions.

Q7: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Both are surface mount formats suitable for automated assembly. Cut Tape is supplied in individual strips for lower-volume applications. Tape & Reel is supplied on continuous reels for high-volume production. Electrical performance is identical; selection depends on procurement volume and assembly equipment compatibility.

Q8: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for commercial and industrial applications.

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