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IRFZ44ESTRL N-Channel 60V 48A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFZ44ESTRL is an N-Channel 60V 48A MOSFET manufactured by Infineon Technologies in the HEXFET® series, packaged in D2PAK (TO-263-3) surface mount configuration. This device is classified as Obsolete, indicating it is no longer in active production. The part delivers 110W maximum power dissipation at case temperature and operates across the industrial temperature range of -55°C to 175°C. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and new project implementations where similar electrical and mechanical characteristics are required.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 48 | A |
| On-State Resistance (Rds On) @ 29A, 10V | 23 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 60 | nC |
| Power Dissipation (Max) | 110 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | D2PAK (TO-263-3) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IRFZ44ESTRL is determined by strict alignment of the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 60V minimum
- Continuous Drain Current (Id): 48A or greater at 25°C
- On-State Resistance (Rds On): Comparable performance at specified gate voltage
- Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
- Package Type: D2PAK (TO-263-3) surface mount configuration
- Operating Temperature Range: -55°C to 175°C minimum
Substitution Categories:
Category 1: Parametric Equivalents (Identical Electrical Specifications) Parts that match the IRFZ44ESTRL across all critical parameters, including 60V Vdss, 48A Id rating, and equivalent Rds On characteristics. These parts are direct functional replacements with identical performance envelopes.
Category 2: Manufacturer Recommended Substitutes (Enhanced Performance) Parts that exceed the IRFZ44ESTRL specifications while maintaining D2PAK packaging and compatible electrical interfaces. These include higher current ratings (50A+), improved Rds On values, or enhanced gate charge characteristics. These parts are suitable for applications where the original part is unavailable and performance headroom is acceptable.
Category 3: Voltage-Elevated Substitutes (Higher Vdss Rating) Parts rated at 100V Vdss or higher that maintain compatible current and thermal characteristics. These parts provide additional voltage margin and are suitable for applications with voltage transient considerations.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg @ 10V (nC) | Power Diss. (W) | Status | RoHS |
|---|---|---|---|---|---|---|---|---|
| IRFZ44ESTRL | Infineon | 60 | 48 | 23 @ 29A | 60 | 110 | Obsolete | Non-compliant |
| IRFZ44ESTRLPBF | Infineon | 60 | 48 | 23 @ 29A | 60 | 110 | Not For New Designs | ROHS3 Compliant |
| IRFZ44SPBF | Vishay Siliconix | 60 | 50 | 28 @ 31A | 67 | 150 | Active | ROHS3 Compliant |
| IRFZ44STRLPBF | Vishay Siliconix | 60 | 50 | 28 @ 31A | 67 | 150 | Active | ROHS3 Compliant |
| FQB50N06TM | onsemi | 60 | 50 | 22 @ 25A | 41 | 120 | Obsolete | ROHS3 Compliant |
| HUF76429S3ST | onsemi | 60 | 47 | 22 @ 47A | 46 | 110 | Active | ROHS3 Compliant |
| PSMN015-60BS,118 | Nexperia USA Inc. | 60 | 50 | 14.8 @ 15A | 20.9 | 86 | Active | ROHS3 Compliant |
| STB55NF06LT4 | STMicroelectronics | 60 | 55 | 18 @ 27.5A | 37 | 95 | Active | ROHS3 Compliant |
| STB55NF06T4 | STMicroelectronics | 60 | 50 | 18 @ 27.5A | 60 | 110 | Active | ROHS3 Compliant |
| IPB50N10S3L16ATMA1 | Infineon | 100 | 50 | 15.4 @ 50A | 64 | 100 | Active | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (Identical Specifications):
IRFZ44ESTRLPBF is the parametric equivalent to IRFZ44ESTRL, maintaining identical electrical performance across all critical parameters. This part is manufactured by Infineon Technologies and is rated as "Not For New Designs," indicating limited availability but continued support for legacy applications. IRFZ44ESTRLPBF carries ROHS3 compliance, addressing regulatory requirements absent in the original IRFZ44ESTRL.
For Active Production Applications:
STB55NF06T4 (STMicroelectronics) provides the closest match to IRFZ44ESTRL specifications with Active product status. This part maintains 60V Vdss, 50A continuous drain current, 18mOhm Rds On, and 110W power dissipation. The STB55NF06T4 is ROHS3 compliant and offers superior availability compared to obsolete alternatives.
HUF76429S3ST (onsemi) is an Active alternative with 60V Vdss and 47A continuous drain current, closely matching the original 48A rating. This part features improved Rds On performance (22mOhm) and reduced gate charge (46nC), delivering enhanced switching efficiency. ROHS3 compliance is confirmed.
For Enhanced Performance with Voltage Margin:
IPB50N10S3L16ATMA1 (Infineon OptiMOS™ series) provides 100V Vdss rating while maintaining 50A continuous drain current and superior Rds On characteristics (15.4mOhm @ 50A). This part is suitable for applications requiring additional voltage transient protection. Active product status and ROHS3 compliance are confirmed.
For High-Current Applications:
STB55NF06LT4 (STMicroelectronics STripFET™ II series) delivers 55A continuous drain current at 60V Vdss with 18mOhm Rds On, providing current headroom beyond the original 48A specification. Active status and ROHS3 compliance are confirmed.
Frequently Asked Questions (FAQ)
Q1: Can IRFZ44SPBF or IRFZ44STRLPBF be used as direct replacements for IRFZ44ESTRL?
IRFZ44SPBF and IRFZ44STRLPBF are manufactured by Vishay Siliconix and share the same 60V Vdss and 50A continuous drain current ratings. However, these parts exhibit higher Rds On values (28mOhm @ 31A versus 23mOhm @ 29A) and increased gate charge (67nC versus 60nC). These differences result in higher conduction losses and switching losses. Both parts are electrically compatible for applications where the original performance envelope is not critical. Both are ROHS3 compliant and Active status.
Q2: What is the advantage of using IPB50N10S3L16ATMA1 over direct equivalents?
IPB50N10S3L16ATMA1 provides 100V Vdss rating compared to the original 60V specification. This elevated voltage rating provides protection against voltage transients and overshoot conditions. The part also delivers superior Rds On performance (15.4mOhm @ 50A), reducing conduction losses. The trade-off is increased input capacitance (4180pF versus 1360pF), which may affect switching speed in high-frequency applications. This part is suitable for applications where voltage margin and efficiency are prioritized over switching speed.
Q3: Are all substitute parts compatible with the D2PAK package footprint?
All substitute parts listed are packaged in D2PAK (TO-263-3) surface mount configuration. PCB footprints are mechanically compatible across all alternatives. However, thermal performance varies due to differences in power dissipation ratings. Applications requiring maximum thermal performance should reference the specific power dissipation values provided in the parameter comparison table.
Q4: Which substitute part offers the best RoHS compliance status?
All substitute parts listed carry ROHS3 compliance certification. The original IRFZ44ESTRL is marked as RoHS non-compliant. For applications requiring RoHS compliance, any of the listed substitutes are acceptable. IRFZ44ESTRLPBF, IRFZ44SPBF, IRFZ44STRLPBF, FQB50N06TM, HUF76429S3ST, PSMN015-60BS,118, STB55NF06LT4, STB55NF06T4, and IPB50N10S3L16ATMA1 all meet ROHS3 requirements.
Q5: What is the difference between STB55NF06LT4 and STB55NF06T4?
Both parts are manufactured by STMicroelectronics in the STripFET™ II series with identical 60V Vdss and 18mOhm Rds On characteristics. STB55NF06LT4 is rated for 55A continuous drain current, while STB55NF06T4 is rated for 50A. STB55NF06T4 matches the original IRFZ44ESTRL power dissipation specification (110W) and gate charge (60nC), making it the closer parametric match. Both parts are Active and ROHS3 compliant.
Q6: Can PSMN015-60BS,118 be used in high-current applications?
PSMN015-60BS,118 is rated for 50A continuous drain current at 60V Vdss. This part features exceptional Rds On performance (14.8mOhm @ 15A) and minimal gate charge (20.9nC @ 10V), resulting in superior efficiency and fast switching characteristics. However, the power dissipation rating (86W) is lower than the original IRFZ44ESTRL (110W). This part is suitable for applications prioritizing efficiency and switching speed over maximum thermal headroom. Active status and ROHS3 compliance are confirmed.
Q7: Is FQB50N06TM suitable for new designs?
FQB50N06TM is classified as Obsolete, indicating it is no longer in active production. While this part is electrically compatible with IRFZ44ESTRL (60V Vdss, 50A Id, 22mOhm Rds On), its obsolete status limits long-term availability and supply chain reliability. For new designs, Active alternatives such as STB55NF06T4, HUF76429S3ST, or PSMN015-60BS,118 are recommended.
Q8: What factors should determine the choice between substitute parts?
Selection should be based on: (1) Product Status—Active parts are preferred for new designs and long-term production; (2) Electrical Performance—Rds On, gate charge, and power dissipation must meet application requirements; (3) Compliance—ROHS3 certification is mandatory for regulated applications; (4) Thermal Requirements—Power dissipation rating must accommodate worst-case operating conditions; (5) Switching Characteristics—Gate charge and input capacitance affect switching speed and EMI performance; (6) Availability—Active parts with high inventory levels ensure supply continuity.
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