IRFZ44ESPBF N-Channel MOSFET 60V 48A Equivalent & Substitute Parts

Part Overview

The IRFZ44ESPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 48A continuous drain current in a D2PAK surface mount package. This device is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating the D2PAK package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current @ 25°C (Id)	48	A
On-State Resistance @ 10V (Rds On Max)	23	mOhm
Gate Threshold Voltage (Vgs th)	4	V @ 250µA
Gate Charge @ 10V (Qg Max)	60	nC
Power Dissipation (Tc)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ44ESPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 60V to ensure safe operation within the original design envelope. Parts rated at 100V provide additional voltage margin.

Current Rating: Substitute parts must support continuous drain current of at least 48A at 25°C. Parts rated at 50A or higher satisfy this requirement.

On-State Resistance: Rds On values between 14.8 mOhm and 28 mOhm at 10V gate drive are acceptable, as these values fall within the performance envelope of the original part and similar device families.

Package Compatibility: All substitute parts use the D2PAK (TO-263-3) surface mount package, ensuring mechanical and thermal compatibility with existing PCB layouts.

Temperature Range: All substitute parts operate across the -55°C to 175°C range, matching the original specification.

Compliance: All substitute parts are ROHS3 compliant and REACH unaffected, maintaining regulatory alignment with the original component.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max @ 10V (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Status
IRFZ44ESPBF	Infineon	60	48	23	60	110	Discontinued
IRFZ44SPBF	Vishay Siliconix	60	50	28	67	150	Active
IRFZ44STRLPBF	Vishay Siliconix	60	50	28	67	150	Active
FQB50N06TM	onsemi	60	50	22	41	120	Obsolete
HUF76429S3ST	onsemi	60	47	22	46	110	Active
STB55NF06T4	STMicroelectronics	60	50	18	60	110	Active
STB55NF06LT4	STMicroelectronics	60	55	18	37	95	Active
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8	20.9	86	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4	64	100	Active

Engineering Selection Recommendations

Primary Substitutes (60V Rating, Active Status):

IRFZ44SPBF and IRFZ44STRLPBF from Vishay Siliconix are direct electrical equivalents with identical 60V/50A ratings. Both are ROHS3 compliant and actively produced. IRFZ44STRLPBF is supplied in tape and reel packaging, while IRFZ44SPBF is supplied in tube packaging. Selection between these depends on procurement and assembly requirements.

STB55NF06T4 from STMicroelectronics provides superior on-state resistance (18 mOhm) and matches the original 110W power dissipation specification. This part is actively produced and ROHS3 compliant.

PSMN015-60BS,118 from Nexperia USA Inc. offers the lowest on-state resistance (14.8 mOhm) among 60V-rated options, reducing conduction losses. This part is actively produced, ROHS3 compliant, and has the highest inventory availability (12,675 units).

Secondary Substitute (100V Rating, Active Status):

IPB50N10S3L16ATMA1 from Infineon provides 100V voltage rating with 50A current capability. This part is suitable for applications requiring additional voltage margin beyond the original 60V specification. It is actively produced and ROHS3 compliant.

Obsolete Alternatives (Not Recommended for New Designs):

FQB50N06TM from onsemi is marked obsolete and should not be selected for new production designs, despite current inventory availability.

Frequently Asked Questions (FAQ)

Q: Can IRFZ44SPBF directly replace IRFZ44ESPBF in existing designs?

A: Yes. Both parts share identical 60V/50A electrical ratings, D2PAK packaging, and operating temperature range. The primary difference is packaging format (tube versus tape and reel) and manufacturer (Vishay Siliconix versus Infineon). Electrical performance is equivalent.

Q: What is the difference between IRFZ44SPBF and IRFZ44STRLPBF?

A: These parts are electrically identical. IRFZ44SPBF is supplied in tube packaging, while IRFZ44STRLPBF is supplied in tape and reel format. Selection depends on assembly line requirements and procurement preferences.

Q: Why would I select STB55NF06T4 over IRFZ44SPBF?

A: STB55NF06T4 offers lower on-state resistance (18 mOhm versus 28 mOhm), resulting in reduced conduction losses and lower junction temperature during operation. This is beneficial in high-current applications where thermal management is critical.

Q: Is PSMN015-60BS,118 suitable for the IRFZ44ESPBF application?

A: Yes. PSMN015-60BS,118 meets all electrical requirements with 60V/50A ratings and D2PAK packaging. It provides the lowest on-state resistance (14.8 mOhm) among 60V options, offering superior efficiency. High inventory availability (12,675 units) supports production continuity.

Q: When should I consider IPB50N10S3L16ATMA1 instead of 60V-rated alternatives?

A: IPB50N10S3L16ATMA1 is selected when the application requires voltage headroom beyond 60V or when operating conditions approach the maximum voltage limits of the original design. The 100V rating provides additional safety margin in transient-prone environments.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts are ROHS3 compliant and REACH unaffected, maintaining regulatory alignment with the original IRFZ44ESPBF specification.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. PSMN015-60BS,118 has the lowest gate charge (20.9 nC), enabling faster switching with lower gate drive power. Higher gate charge values (60-67 nC) require proportionally higher gate drive current but do not prevent substitution in standard applications.

Q: Can I use FQB50N06TM as a substitute?

A: FQB50N06TM is marked obsolete and should not be selected for new production designs. Although current inventory exists, obsolete status indicates discontinued manufacturing and potential future supply unavailability.

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