IRFZ44EPBF N-Channel 60V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ44EPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 48A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration and is compliant with RoHS3 and REACH regulations. The part carries a "Not For New Designs" product status, making identification of equivalent and substitute components essential for ongoing production support and design alternatives.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	48	A (Tc)
On-State Resistance (Rds On) @ 29A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	110	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
Gate Charge (Qg) @ 10V	60	nC
Input Capacitance (Ciss) @ 25V	1360	pF

Substitute Part Grouping Explanation

Substitution eligibility for the IRFZ44EPBF is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Package Type: TO-220AB or TO-220-3 (mechanically compatible)
Mounting Type: Through Hole
Operating Temperature Range: Must support -55°C to 175°C minimum
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

Continuous Drain Current (Id): Minimum 48A at 25°C for direct substitution
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Power Dissipation: Thermal capability relative to application requirements

Substitute parts are grouped into three categories: Direct Equivalents (same base part number variants), Manufacturer-Recommended Alternatives (active product status), and Compatible Substitutes (meeting all electrical and mechanical parameters).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Package	Status
IRFZ44EPBF	Infineon	60	48	23 @ 29A	4 @ 250µA	60 @ 10V	110	TO-220AB	Not For New Designs
IRFZ44VZPBF	Infineon	60	57	12 @ 34A	4 @ 250µA	65 @ 10V	92	TO-220AB	Not For New Designs
IRFZ44PBF	Vishay Siliconix	60	50	28 @ 31A	4 @ 250µA	67 @ 10V	150	TO-220AB	Active
IRFZ44RPBF	Vishay Siliconix	60	50	28 @ 31A	4 @ 250µA	67 @ 10V	150	TO-220AB	Active
IRFZ48RPBF	Vishay Siliconix	60	50	18 @ 43A	4 @ 250µA	110 @ 10V	190	TO-220AB	Active
NDP6060	onsemi	60	48	25 @ 24A	4 @ 250µA	70 @ 10V	100	TO-220-3	Active
NDP6060L	onsemi	60	48	20 @ 24A	2 @ 250µA	60 @ 5V	100	TO-220-3	Active
IRFB3806PBF	Infineon	60	43	15.8 @ 25A	4 @ 50µA	30 @ 10V	71	TO-220AB	Active
HUF76423P3	onsemi	60	35	30 @ 35A	3 @ 250µA	34 @ 10V	85	TO-220-3	Active
FQP30N06L	onsemi	60	32	35 @ 16A	2.5 @ 250µA	20 @ 5V	79	TO-220-3	Obsolete
AOT2618L	Alpha & Omega	60	23 (Tc)	19 @ 20A	2.5 @ 250µA	20 @ 10V	41.5	TO-220	Active

Engineering Selection Recommendations

Direct Equivalents (Same Base Part Number):

IRFZ44VZPBF represents a direct variant of the IRFZ44 base product family from Infineon Technologies. Both IRFZ44EPBF and IRFZ44VZPBF share identical voltage ratings (60V Vdss) and similar current handling (48A vs. 57A). The IRFZ44VZPBF exhibits superior on-state resistance (12 mOhm vs. 23 mOhm), resulting in lower power dissipation during operation. Both parts carry "Not For New Designs" status and are RoHS3 compliant. Selection between these variants depends on thermal management requirements and available inventory.

Active Product Alternatives (Recommended for New Designs):

IRFZ44PBF and IRFZ44RPBF (Vishay Siliconix) are electrically equivalent to IRFZ44EPBF with active product status. Both deliver 50A continuous drain current at 25°C, exceeding the 48A requirement. These parts maintain identical gate threshold voltage (4V @ 250µA) and voltage rating (60V). The higher power dissipation rating (150W vs. 110W) provides thermal margin. Both are RoHS3 compliant and available in TO-220AB packaging.

IRFZ48RPBF (Vishay Siliconix) offers enhanced performance with 18 mOhm on-state resistance and 190W power dissipation capability. This part is suitable for applications requiring lower conduction losses and improved thermal performance while maintaining 60V/50A electrical specifications.

onsemi Alternatives:

NDP6060 and NDP6060L provide pin-compatible substitution in TO-220-3 packaging. Both deliver 48A continuous drain current matching the IRFZ44EPBF specification. NDP6060L features improved on-state resistance (20 mOhm vs. 25 mOhm) and lower gate threshold voltage (2V vs. 4V), enabling operation with reduced drive voltage. Both parts are active products with RoHS3 compliance and extended temperature range (-65°C to 175°C).

IRFB3806PBF (Infineon, Active) provides a conservative alternative with 43A current rating and superior on-state resistance (15.8 mOhm). This part is suitable for applications where lower power dissipation is prioritized over maximum current capacity.

HUF76423P3 (onsemi, Active) delivers 35A continuous current with 30 mOhm on-state resistance. This part is appropriate for moderate-current applications within the 60V rating class.

Obsolete and Limited-Use Parts:

FQP30N06L (onsemi, Obsolete) meets electrical specifications with 32A current rating but carries obsolete product status. Use only for legacy system maintenance where no alternative exists.

AOT2618L (Alpha & Omega, Active) provides 23A continuous current at 25°C case temperature, representing a lower-current alternative suitable for reduced-power applications within the 60V class.

Frequently Asked Questions (FAQ)

Q: Can IRFZ44VZPBF directly replace IRFZ44EPBF in existing designs?

A: Yes. Both parts share identical Vdss (60V), gate threshold voltage (4V @ 250µA), and TO-220AB packaging. IRFZ44VZPBF delivers higher continuous current (57A vs. 48A) and lower on-state resistance (12 mOhm vs. 23 mOhm), making it a direct electrical upgrade. Verify PCB layout accommodates the part and thermal management is adequate for the application.

Q: What is the difference between TO-220AB and TO-220-3 packaging?

A: Both are through-hole packages with identical pin pitch and mechanical footprint. TO-220AB and TO-220-3 designations refer to the same physical form factor. Parts in either package are mechanically interchangeable on standard TO-220 PCB layouts.

Q: Why is IRFZ44EPBF marked "Not For New Designs"?

A: This status indicates the part is in mature/end-of-life phase. Infineon recommends using active alternatives for new product development. Existing production can continue using available inventory, but new designs should transition to active parts such as IRFZ44PBF, IRFZ44RPBF, or IRFZ48RPBF.

Q: Which substitute offers the best thermal performance?

A: IRFZ48RPBF provides the highest power dissipation rating (190W) and lowest on-state resistance (18 mOhm @ 43A, 10V). This part minimizes conduction losses and is optimal for high-current, high-frequency switching applications requiring superior thermal characteristics.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 Compliant status and REACH Unaffected designation, meeting current environmental and regulatory requirements for commercial and industrial applications.

Q: Can NDP6060L operate with lower gate drive voltage than IRFZ44EPBF?

A: Yes. NDP6060L has a gate threshold voltage of 2V @ 250µA compared to 4V for IRFZ44EPBF. This enables operation with reduced drive voltage (5V vs. 10V), reducing gate driver power consumption in applications with voltage-constrained drive circuits.

Q: What is the minimum continuous current rating acceptable for substitution?

A: The IRFZ44EPBF requires 48A continuous drain current at 25°C. Substitutes must meet or exceed this specification for direct replacement. Parts with lower ratings (such as AOT2618L at 23A or HUF76423P3 at 35A) are suitable only for applications with reduced current requirements.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. IRFZ44EPBF requires 60 nC @ 10V. Substitutes with lower Qg (such as FQP30N06L at 20 nC or AOT2618L at 20 nC) reduce gate driver power dissipation and enable faster switching. Higher Qg parts (such as IRFZ48RPBF at 110 nC) require more drive energy but may offer improved switching characteristics in specific topologies.

Q: Is inventory availability a factor in part selection?

A: Yes. Current inventory levels are provided for reference: IRFZ44EPBF (10,420 pcs), IRFZ44PBF (1,446 pcs), IRFZ44RPBF (5,420 pcs), NDP6060 (1,673 pcs), and NDP6060L (1,532 pcs). For high-volume production, verify substitute part availability with suppliers before design transition.

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