IRFZ34STRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ34STRLPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 30A continuous drain current. This device is packaged in a Surface Mount TO-263 (D2PAK) configuration and is classified as Active product status. The IRFZ34STRLPBF is suitable for applications requiring moderate voltage and current switching capabilities with thermal management through the D2PAK package tab.

Equivalent and substitute parts are identified when design requirements change, inventory constraints occur, or when alternative suppliers offer compatible devices meeting the same electrical and mechanical specifications within defined tolerance ranges.

Substiute Parts

IRFZ34STRLPBF

Vishay SiliconixIn Stock: 1041IRFZ34STRLPBF Datasheet

Current PartRFQ

BUK9675-55A,118

Nexperia USA Inc.In Stock: 6661BUK9675-55A,118 Datasheet

MFR RecommendedRFQ

PSMN015-60BS,118

Nexperia USA Inc.In Stock: 12771PSMN015-60BS,118 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFZ34STRLPBF are selected based on the following criteria:

Primary Substitution Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
• Package Type: Must be TO-263-3 (D2PAK) Surface Mount
• Mounting Type: Surface Mount
• Operating Temperature Range: Must cover -55°C to 175°C (TJ)
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Compatibility Parameters:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Gate Voltage Rating (Vgs Max): ±10V or ±20V acceptable

Application-Dependent Parameters:

• Continuous Drain Current (Id): Substitutes with equal or higher current rating are functionally compatible
• RDS(on): Lower on-resistance values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Affects gate drive requirements

The IRFZ34STRLPBF has two manufacturer-recommended substitutes: BUK9675-55A,118 and PSMN015-60BS,118. Both devices meet the core substitution criteria of D2PAK packaging, N-Channel MOSFET technology, and RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

PSMN015-60BS,118 (Nexperia USA Inc.)

The PSMN015-60BS,118 is the primary substitute for the IRFZ34STRLPBF. This device maintains identical Vdss (60V) and Vgs Max (±20V) ratings, ensuring direct compatibility with existing gate drive circuits. The PSMN015-60BS,118 provides superior performance with 50A continuous drain current (compared to 30A) and significantly lower on-resistance (14.8 mOhm vs. 50 mOhm), resulting in reduced power dissipation and improved thermal efficiency. Gate charge is reduced to 20.9 nC, lowering switching losses. Both devices share identical operating temperature range (-55°C to 175°C), D2PAK packaging, and RoHS3 compliance. The PSMN015-60BS,118 is suitable for applications requiring higher current capacity or improved efficiency within the same thermal envelope.

BUK9675-55A,118 (Nexperia USA Inc.)

The BUK9675-55A,118 is an alternative substitute with reduced voltage rating (55V vs. 60V) and lower continuous drain current (20A vs. 30A). This device is qualified to AEC-Q101 automotive standards, making it suitable for automotive applications. The BUK9675-55A,118 features lower input capacitance (643 pF vs. 1200 pF) and lower gate threshold voltage (2V vs. 4V), which may reduce gate drive complexity in certain applications. The reduced Vdss rating (55V) limits this substitute to applications where the 60V rating of the main part is not required. The BUK9675-55A,118 operates within the same temperature range and maintains RoHS3 compliance and MSL 1 rating.

Selection Criteria:

• Use PSMN015-60BS,118 when higher current capacity, lower on-resistance, or improved efficiency is required while maintaining 60V voltage rating
• Use BUK9675-55A,118 when automotive qualification (AEC-Q101) is required and application voltage does not exceed 55V
• All three devices are Active status products with unlimited moisture sensitivity and RoHS3 compliance

Frequently Asked Questions (FAQ)

Q: Can the PSMN015-60BS,118 directly replace the IRFZ34STRLPBF in existing designs?

A: Yes. Both devices share identical Vdss (60V), Vgs Max (±20V), operating temperature range (-55°C to 175°C), and D2PAK packaging. Gate drive circuits designed for the IRFZ34STRLPBF operate with the PSMN015-60BS,118 without modification. The PSMN015-60BS,118 provides higher current capacity (50A vs. 30A) and lower on-resistance (14.8 mOhm vs. 50 mOhm), making it a direct upgrade.

Q: What is the voltage limitation of the BUK9675-55A,118 substitute?

A: The BUK9675-55A,118 has a maximum Vdss rating of 55V, compared to 60V for the IRFZ34STRLPBF. This device is suitable only for applications where the maximum drain-to-source voltage does not exceed 55V. Applications requiring the full 60V rating must use the IRFZ34STRLPBF or PSMN015-60BS,118.

Q: Does the BUK9675-55A,118 require different gate drive voltage?

A: The BUK9675-55A,118 has a maximum Vgs rating of ±10V, compared to ±20V for the IRFZ34STRLPBF. Gate drive circuits must be designed to operate within ±10V for this device. The gate threshold voltage is lower (2V vs. 4V), which may simplify gate drive design in some applications.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IRFZ34STRLPBF, BUK9675-55A,118, and PSMN015-60BS,118 are all ROHS3 Compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Q: Which substitute is suitable for automotive applications?

A: The BUK9675-55A,118 is qualified to AEC-Q101 automotive standards. The IRFZ34STRLPBF and PSMN015-60BS,118 do not carry automotive qualification in the provided specifications.

Q: How do the on-resistance values affect circuit performance?

A: Lower on-resistance (RDS(on)) reduces power dissipation during conduction. The PSMN015-60BS,118 (14.8 mOhm) dissipates significantly less power than the IRFZ34STRLPBF (50 mOhm) at equivalent current levels. The BUK9675-55A,118 (68 mOhm) has higher on-resistance, resulting in greater power dissipation.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) determines the energy required to switch the device. Lower gate charge reduces switching losses and simplifies gate drive design. The PSMN015-60BS,118 (20.9 nC) has significantly lower gate charge than the IRFZ34STRLPBF (46 nC), improving switching efficiency.

Q: Are all three devices available in the same package?

A: Yes. All three devices use the TO-263-3 (D2PAK) Surface Mount package with identical pinout and thermal tab configuration, enabling direct PCB layout compatibility.

Q: What is the continuous drain current limitation of the BUK9675-55A,118?

A: The BUK9675-55A,118 is rated for 20A continuous drain current at 25°C, compared to 30A for the IRFZ34STRLPBF. Applications requiring continuous current above 20A must use the IRFZ34STRLPBF or PSMN015-60BS,118.