IRFZ34NSTRR N-Channel MOSFET 55V 29A D2PAK Equivalent & Substitute Parts

Part Overview

The IRFZ34NSTRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 29A continuous drain current in a D2PAK surface mount package. This device is classified as Obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. The HEXFET® series device operates across a wide temperature range from -55°C to 175°C and is RoHS non-compliant. Substitute parts must maintain electrical compatibility within the specified parameter tolerances while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	29	A (Tc)
On-Resistance (Rds On) @ 16A, 10V	40	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	34	nC
Input Capacitance (Ciss) @ 25V	700	pF
Power Dissipation (Max)	3.8 (Ta), 68 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFZ34NSTRR are classified based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Critical Parameters for Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Package Type: Must be D2PAK (TO-263-3) surface mount
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must encompass -55°C to 175°C
Continuous Drain Current (Id): Must support minimum 29A operation
On-Resistance (Rds On): Must not exceed 40mOhm at specified test conditions

Grouping Logic:

Group 1 – Direct Parametric Equivalent: Parts with identical electrical specifications and active product status, suitable for direct replacement without circuit redesign.

Group 2 – Enhanced Performance Substitutes: Parts with higher current ratings, lower on-resistance, or improved power dissipation while maintaining voltage and package compatibility. These provide design margin and are suitable when thermal or current headroom is beneficial.

Group 3 – Voltage-Rated Alternatives: Parts with higher Vdss ratings (60V) that maintain all other critical parameters. These provide additional voltage margin and are compatible with the original circuit topology.

All substitute parts listed maintain D2PAK packaging, N-Channel MOSFET technology, and surface mount mounting type. Substitutes are selected only from parts with confirmed inventory and specified electrical parameters matching or exceeding the original device requirements.

Parameter Comparison

Parameter	IRFZ34NSTRR	IRFZ34NSTRLPBF	BUK7635-55A,118	NDB5060L	PHB32N06LT,118	PSMN015-60BS,118
Manufacturer	Infineon	Infineon	Nexperia	onsemi	Nexperia	Nexperia
Vdss (V)	55	55	55	60	60	60
Id @ 25°C (A)	29	29	35	26	34	50
Rds On (mOhm)	40 @ 16A, 10V	40 @ 16A, 10V	35 @ 20A, 10V	35 @ 13A, 10V	37 @ 20A, 10V	14.8 @ 15A, 10V
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 1mA	2 @ 250µA	2 @ 1mA	4 @ 1mA
Qg (nC)	34 @ 10V	34 @ 10V	—	24 @ 5V	17 @ 5V	20.9 @ 10V
Ciss (pF)	700 @ 25V	700 @ 25V	872 @ 25V	840 @ 30V	1280 @ 25V	1220 @ 30V
Power Dissipation (W)	68 (Tc)	68 (Tc)	85 (Tc)	68 (Tc)	97 (Tc)	86 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-65 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFZ34NSTRLPBF (Infineon Technologies)

This part is the direct parametric equivalent of the IRFZ34NSTRR with identical electrical specifications: 55V Vdss, 29A continuous drain current, 40mOhm Rds On, and 34nC gate charge. The critical distinction is product status: IRFZ34NSTRLPBF is Active with ROHS3 compliance, whereas the original IRFZ34NSTRR is Obsolete and RoHS non-compliant. This substitute is recommended as the primary replacement for new designs and production continuity. Packaging is specified as Cut Tape (CT) & Digi-Reel®, with 2030 units in stock.

PHB32N06LT,118 (Nexperia USA Inc.)

This TrenchMOS™ series device provides enhanced performance with 60V Vdss, 34A continuous drain current, and 37mOhm Rds On. Power dissipation increases to 97W (Tc), offering superior thermal performance. Gate charge is reduced to 17nC at 5V, improving switching efficiency. Product status is Active with ROHS3 compliance. This substitute is suitable for applications requiring improved current handling and thermal margin while maintaining D2PAK packaging and N-Channel MOSFET technology.

PSMN015-60BS,118 (Nexperia USA Inc.)

This device offers the highest current rating at 50A continuous drain current with significantly lower on-resistance of 14.8mOhm at 15A, 10V. Vdss is rated at 60V. Power dissipation is 86W (Tc). Product status is Active with ROHS3 compliance and highest inventory availability (12,675 units). This substitute is appropriate for designs where maximum current capacity and minimal conduction losses are prioritized, with D2PAK package compatibility maintained.

NDB5060L (onsemi)

This device provides 60V Vdss with 26A continuous drain current and 35mOhm Rds On. Power dissipation is 68W (Tc), matching the original device. Operating temperature range extends to -65°C minimum. Product status is Active with ROHS3 compliance. This substitute is suitable for applications requiring extended low-temperature operation while maintaining comparable electrical performance. Inventory is 1987 units.

BUK7635-55A,118 (Nexperia USA Inc.)

This TrenchMOS™ series device maintains 55V Vdss with enhanced 35A continuous drain current and 35mOhm Rds On. Power dissipation reaches 85W (Tc). The device includes AEC-Q101 automotive qualification. Product status is Obsolete with ROHS3 compliance. This substitute is suitable for automotive applications requiring enhanced current capacity while maintaining the original 55V voltage rating.

Frequently Asked Questions (FAQ)

Q: Can IRFZ34NSTRLPBF be used as a direct replacement for IRFZ34NSTRR without circuit modification?

A: Yes. IRFZ34NSTRLPBF is a direct parametric equivalent with identical Vdss (55V), Id (29A), Rds On (40mOhm), and gate charge (34nC). Both devices use D2PAK packaging and N-Channel MOSFET technology. The primary difference is product status and RoHS compliance. No circuit redesign is required.

Q: What is the key difference between 55V and 60V rated substitutes?

A: Substitutes rated at 60V (NDB5060L, PHB32N06LT,118, PSMN015-60BS,118) provide additional voltage margin above the original 55V specification. These devices are electrically compatible with 55V circuit designs and offer enhanced overvoltage protection. All maintain D2PAK packaging and N-Channel MOSFET technology.

Q: Which substitute offers the best thermal performance?

A: PHB32N06LT,118 provides the highest power dissipation rating at 97W (Tc), followed by BUK7635-55A,118 at 85W (Tc) and PSMN015-60BS,118 at 86W (Tc). Selection depends on circuit thermal requirements and current demands.

Q: Are all substitute parts RoHS compliant?

A: All listed substitutes are ROHS3 compliant. The original IRFZ34NSTRR is RoHS non-compliant. For applications requiring RoHS compliance, any of the listed substitutes are suitable.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and driver circuit requirements. IRFZ34NSTRLPBF matches the original at 34nC @ 10V. PHB32N06LT,118 has lower gate charge (17nC @ 5V), improving switching efficiency. NDB5060L has 24nC @ 5V. Lower gate charge reduces driver power dissipation and enables faster switching transitions.

Q: Can PSMN015-60BS,118 be used in all applications designed for IRFZ34NSTRR?

A: PSMN015-60BS,118 is electrically compatible with IRFZ34NSTRR in terms of voltage rating and package type. However, the significantly lower on-resistance (14.8mOhm vs. 40mOhm) and higher current rating (50A vs. 29A) may affect circuit behavior in current-limiting or thermal management designs. Verification of circuit performance is recommended for applications with tight current or thermal specifications.

Q: What packaging options are available for substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, maintaining mechanical compatibility with the original IRFZ34NSTRR. Packaging variants include Cut Tape (CT) & Digi-Reel® and Tape & Reel (TR) options depending on the specific part number and supplier.

Q: Which substitute has the highest inventory availability?

A: PSMN015-60BS,118 has the highest inventory with 12,675 units in stock, followed by IRFZ34NSTRLPBF with 2030 units and NDB5060L with 1987 units.

Q: Are automotive-qualified substitutes available?

A: Yes. BUK7635-55A,118 includes AEC-Q101 automotive qualification, making it suitable for automotive applications requiring enhanced reliability standards.

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