IRFZ34NS N-Channel MOSFET 55V 29A Equivalent & Substitute Parts

Part Overview

The IRFZ34NS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 29A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The IRFZ34NS operates across a wide temperature range from -55°C to 175°C and is suitable for switching applications requiring moderate current handling in compact surface mount form factors.

Substiute Parts

IRFZ34NS
Infineon TechnologiesIn Stock: 1824IRFZ34NS Datasheet
IRFZ34NS
Current Part
BUK7635-55A,118
Nexperia USA Inc.In Stock: 883BUK7635-55A,118 Datasheet
BUK7635-55A,118
MFR Recommended
PSMN015-60BS,118
Nexperia USA Inc.In Stock: 12771PSMN015-60BS,118 Datasheet
PSMN015-60BS,118
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 29 A (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 16A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25V
Power Dissipation (Max) 3.8 (Ta), 68 (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type D2PAK (TO-263-3)
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRFZ34NS is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 55V
  • Continuous Drain Current (Id) must equal or exceed 29A
  • Gate Threshold Voltage (Vgs(th)) must be compatible with 4V @ 250µA specification
  • Maximum Gate Voltage (Vgs) must support ±20V operation
  • Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Criteria:

  • Package type must be D2PAK (TO-263-3) surface mount
  • Pin configuration must match 2 Leads + Tab standard

Identified Substitute Parts:

  1. BUK7635-55A,118 (Nexperia USA Inc.) — Meets all electrical parameters with improved current rating (35A) and lower on-resistance (35mOhm). Maintains identical Vdss (55V) and package (D2PAK). Includes automotive qualification (AEC-Q101) and RoHS3 compliance.

  2. PSMN015-60BS,118 (Nexperia USA Inc.) — Exceeds electrical specifications with higher Vdss (60V) and significantly higher current rating (50A). Provides superior on-resistance performance (14.8mOhm). Maintains D2PAK package and active product status with RoHS3 compliance.

Parameter Comparison

Parameter IRFZ34NS (Main) BUK7635-55A,118 PSMN015-60BS,118 Unit
Manufacturer Infineon Technologies Nexperia USA Inc. Nexperia USA Inc.
FET Type N-Channel N-Channel N-Channel
Vdss 55 55 60 V
Id @ 25°C (Tc) 29 35 50 A
Rds On (Max) 40 @ 16A, 10V 35 @ 20A, 10V 14.8 @ 15A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 1mA 4 @ 1mA V
Vgs (Max) ±20 ±20 ±20 V
Ciss (Max) @ Vds 700 @ 25V 872 @ 25V 1220 @ 30V pF
Power Dissipation (Tc) 68 85 86 W
Operating Temperature -55 to 175 -55 to 175 -55 to 175 °C (TJ)
Package D2PAK (TO-263-3) D2PAK (TO-263-3) D2PAK (TO-263-3)
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Obsolete Obsolete Active
RoHS Status Non-compliant RoHS3 Compliant RoHS3 Compliant
Automotive Qualification AEC-Q101

Engineering Selection Recommendations

For Direct Replacement (Minimum Specification Match):

The BUK7635-55A,118 provides the closest electrical equivalence to the IRFZ34NS. Both devices maintain identical Vdss (55V) and comparable current ratings (35A vs. 29A). The BUK7635-55A,118 offers improved on-resistance performance and includes AEC-Q101 automotive qualification, making it suitable for applications requiring enhanced reliability. However, this part is also classified as obsolete.

For Long-Term Design Continuity (Active Product Status):

The PSMN015-60BS,118 is the recommended substitute for new designs and ongoing production. This device is in active product status, ensuring long-term availability and supply chain stability. It exceeds the IRFZ34NS specifications across all critical parameters: higher Vdss (60V), significantly higher current rating (50A), and superior on-resistance (14.8mOhm). The PSMN015-60BS,118 maintains D2PAK package compatibility and includes RoHS3 compliance.

Compliance Considerations:

Both substitute parts are RoHS3 compliant, addressing environmental and regulatory requirements that the obsolete IRFZ34NS does not meet. The BUK7635-55A,118 includes AEC-Q101 automotive qualification for applications requiring automotive-grade reliability standards.

Frequently Asked Questions (FAQ)

Q: Can the BUK7635-55A,118 directly replace the IRFZ34NS in existing designs?

A: Yes. The BUK7635-55A,118 maintains identical Vdss (55V) and D2PAK package configuration. The higher current rating (35A vs. 29A) and lower on-resistance (35mOhm vs. 40mOhm) provide improved performance margins. Gate threshold voltage and maximum gate voltage specifications are compatible. However, verify that the higher input capacitance (872pF vs. 700pF) does not impact gate drive circuit timing in your specific application.

Q: Why is the PSMN015-60BS,118 recommended over the BUK7635-55A,118?

A: The PSMN015-60BS,118 is in active product status, ensuring long-term availability and supply chain continuity. The BUK7635-55A,118 is also obsolete. Additionally, the PSMN015-60BS,118 provides superior electrical performance with higher current capacity (50A), lower on-resistance (14.8mOhm), and higher power dissipation capability (86W). These characteristics provide greater design margin and thermal performance.

Q: Are there any package compatibility concerns with these substitutes?

A: All three devices use the D2PAK (TO-263-3) package with identical pin configuration (2 Leads + Tab). PCB layout and thermal management considerations remain consistent. No package-related modifications are required for substitution.

Q: What is the impact of higher input capacitance in the substitute parts?

A: The BUK7635-55A,118 has 872pF input capacitance compared to 700pF in the IRFZ34NS. The PSMN015-60BS,118 has 1220pF. Higher input capacitance increases gate charge requirements and may extend switching times. Verify that your gate drive circuit can supply sufficient current to meet switching frequency requirements. For most standard switching applications, this difference is not critical.

Q: Do the substitute parts require different gate drive voltage?

A: No. All three devices operate with identical gate voltage specifications: Vgs(th) of 4V and maximum Vgs of ±20V. Gate drive circuits designed for the IRFZ34NS are directly compatible with both substitute parts.

Q: What are the thermal performance differences?

A: The IRFZ34NS is rated for 68W (Tc) power dissipation. The BUK7635-55A,118 provides 85W (Tc), and the PSMN015-60BS,118 provides 86W (Tc). The substitute parts offer improved thermal performance, allowing higher power handling or reduced thermal management requirements in the same package.

Q: Are there compliance or qualification differences?

A: The BUK7635-55A,118 includes AEC-Q101 automotive qualification, suitable for automotive applications. The PSMN015-60BS,118 does not carry automotive qualification but is RoHS3 compliant. Both substitute parts are RoHS3 compliant, while the original IRFZ34NS is RoHS non-compliant. Verify compliance requirements for your specific application.

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