IRFZ34EPBF N-Channel 60V 28A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ34EPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 28A continuous drain current in the TO-220AB package. This device belongs to the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new designs and production runs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	28	A
On-State Resistance (Rds On) @ 17A, 10V	42	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	30	nC
Power Dissipation (Max)	68	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRFZ34EPBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide)
Package: TO-220AB or TO-220-3 (mechanically and electrically compatible)
Mounting: Through Hole
Operating Temperature Range: Must support -55°C to 175°C minimum

Performance Parameters for Substitution:

Continuous Drain Current (Id): Substitute must meet or exceed 28A
On-State Resistance (Rds On): Lower values indicate improved performance; higher values acceptable if thermal design accommodates
Gate Charge (Qg): Affects switching speed; higher values acceptable in most applications
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into three categories based on current rating and performance characteristics:

Category 1 - Direct Equivalents (28A to 30A range): IRFZ34PBF, FQP30N06 Category 2 - Higher Current Capability (38A to 79A range): STP45NF06, IRF1018EPBF, IRF1010EZPBF Category 3 - High Current Capability (100A range): PSMN4R6-60PS,127, PSMN3R0-60PS,127

All listed substitutes maintain the 60V Vdss rating and TO-220 package family compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	Package
IRFZ34EPBF	Infineon	60	28	42 @ 17A, 10V	30 @ 10V	68	Obsolete	TO-220AB
IRFZ34PBF	Vishay Siliconix	60	30	50 @ 18A, 10V	46 @ 10V	88	Active	TO-220AB
FQP30N06	onsemi	60	30	40 @ 15A, 10V	25 @ 10V	79	Obsolete	TO-220-3
STP36NF06L	STMicroelectronics	60	30	40 @ 15A, 10V	17 @ 5V	70	Active	TO-220
STP45NF06	STMicroelectronics	60	38	28 @ 19A, 10V	58 @ 10V	80	Active	TO-220
IRF1018EPBF	Infineon	60	79	8.4 @ 47A, 10V	69 @ 10V	110	Active	TO-220AB
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A, 10V	86 @ 10V	140	Active	TO-220AB
PSMN4R6-60PS,127	Nexperia USA Inc.	60	100	4.6 @ 25A, 10V	70.8 @ 10V	211	Obsolete	TO-220AB
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3 @ 25A, 10V	130 @ 10V	306	Obsolete	TO-220AB

Engineering Selection Recommendations

For Direct Replacement (Equivalent Performance):

IRFZ34PBF (Vishay Siliconix) is the primary direct equivalent. It maintains the same 60V/30A rating with comparable on-state resistance and is currently in active production status. This part is suitable for applications requiring identical electrical characteristics to the IRFZ34EPBF.

STP36NF06L (STMicroelectronics) provides equivalent 30A current rating with improved gate charge characteristics and active product status. This part is recommended for new designs requiring long-term availability assurance.

For Performance Enhancement:

STP45NF06 (STMicroelectronics) offers 38A continuous current with superior on-state resistance (28 mOhm) compared to the original 42 mOhm specification. This part is suitable for applications where improved efficiency and reduced thermal dissipation are beneficial. Active product status ensures supply continuity.

IRF1018EPBF and IRF1010EZPBF (Infineon) provide significantly higher current ratings (79A and 75A respectively) with substantially lower on-state resistance. These parts are appropriate for applications requiring higher current capacity or improved thermal performance. Both maintain active product status and TO-220AB packaging.

For High Current Applications:

PSMN4R6-60PS,127 and PSMN3R0-60PS,127 (Nexperia USA Inc.) support 100A continuous current with extremely low on-state resistance (4.6 mOhm and 3 mOhm respectively). These parts are suitable for high-power applications where thermal management and efficiency are critical. Note: Both parts are classified as obsolete; verify long-term availability before design commitment.

Compliance Considerations:

All recommended active-status substitutes comply with RoHS3 requirements. IRFZ34PBF carries REACH Affected status; verify regulatory compliance for your application region. All other active substitutes maintain REACH Unaffected status.

Frequently Asked Questions (FAQ)

Q: Can IRFZ34PBF directly replace IRFZ34EPBF in existing designs?

A: Yes. IRFZ34PBF is a direct equivalent with identical electrical ratings (60V, 30A) and TO-220AB packaging. The primary difference is manufacturer (Vishay Siliconix vs. Infineon) and active product status. Electrical performance is compatible for all applications currently using IRFZ34EPBF.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with identical pin configuration and mechanical footprint. TO-220AB and TO-220-3 designations refer to the same physical package used by different manufacturers. Parts in either designation are mechanically and electrically interchangeable on standard TO-220 PCB layouts.

Q: Why would I choose STP45NF06 over IRFZ34PBF if both are 60V rated?

A: STP45NF06 provides higher current capacity (38A vs. 30A) and superior on-state resistance (28 mOhm vs. 50 mOhm). This results in lower power dissipation and improved thermal performance. Selection depends on application current requirements and thermal design constraints.

Q: Are the high-current parts (PSMN series, IRF1010EZPBF) suitable for applications designed for 28A?

A: Yes. Higher current-rated parts are electrically compatible with lower current applications. The 60V Vdss rating and TO-220 package remain constant. Higher current capability provides design margin and improved thermal performance. Verify that gate drive circuitry can accommodate potentially higher gate charge values.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit requirements. Higher Qg values (e.g., 130 nC in PSMN3R0-60PS,127) require more charge delivery from the gate driver but do not prevent substitution. Existing gate drive circuits designed for 30 nC will function with higher Qg parts; switching speed may be slightly reduced.

Q: Should I use obsolete-status parts as substitutes?

A: Obsolete parts (FQP30N06, PSMN series) carry supply risk. For new designs, prioritize active-status parts: IRFZ34PBF, STP36NF06L, STP45NF06, IRF1018EPBF, or IRF1010EZPBF. For existing production requiring immediate replacement, obsolete parts may be acceptable if inventory is confirmed available.

Q: How do I verify thermal compatibility when substituting with higher-current parts?

A: Compare power dissipation ratings and on-state resistance values. Lower Rds On values reduce I²R losses. Verify that PCB thermal design (copper area, heat sink attachment) can accommodate the new part's power dissipation. Consult thermal simulation or manufacturer thermal models for specific applications.

Q: Are all listed substitutes RoHS compliant?

A: All active-status parts (IRFZ34PBF, STP36NF06L, STP45NF06, IRF1018EPBF, IRF1010EZPBF) are RoHS3 compliant. Obsolete parts vary; verify RoHS status for specific part numbers if regulatory compliance is required.

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