IRFZ34E N-Channel 60V 28A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ34E is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-source voltage and 28A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and production continuity. The IRFZ34E belongs to the HEXFET® series and operates across a temperature range of -55°C to 175°C (TJ). Due to its obsolete status and RoHS non-compliant classification, identifying functionally compatible alternatives is essential for procurement and design flexibility.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	28	A
On-State Resistance (Rds On) @ 17A, 10V	42	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	30	nC
Power Dissipation (Max)	68	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFZ34E is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 28A at 25°C
Gate Drive Voltage: Must support 10V operation
Package Type: Must be TO-220AB or TO-220-3 (mechanically compatible through-hole packages)
Operating Temperature Range: Must span -55°C to 175°C minimum
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance but are not mandatory for substitution
Gate Charge (Qg): Affects switching speed; higher values acceptable if circuit design accommodates
Power Dissipation: Higher ratings provide thermal margin
RoHS Compliance: Preferred for new designs but not a functional requirement
Product Status: Active status preferred over obsolete for long-term availability

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (Matched Current Rating): Parts with continuous drain current ratings between 28A and 32A, maintaining similar on-state resistance and gate charge characteristics. These provide near-identical electrical performance with minimal circuit redesign.

Category B - Higher Current Capability (Upgraded Performance): Parts rated for 75A to 100A continuous drain current. These offer superior thermal performance and lower on-state resistance, suitable for applications requiring enhanced current handling or reduced power dissipation.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status	RoHS
IRFZ34E	Infineon	60	28	42 @ 17A, 10V	30 @ 10V	68	TO-220AB	Obsolete	Non-compliant
IRFZ34PBF	Vishay Siliconix	60	30	50 @ 18A, 10V	46 @ 10V	88	TO-220AB	Active	ROHS3 Compliant
FQP30N06L	onsemi	60	32	35 @ 16A, 10V	20 @ 5V	79	TO-220-3	Obsolete	ROHS3 Compliant
STP36NF06L	STMicroelectronics	60	30	40 @ 15A, 10V	17 @ 5V	70	TO-220	Active	ROHS3 Compliant
FQP30N06	onsemi	60	30	40 @ 15A, 10V	25 @ 10V	79	TO-220-3	Obsolete	ROHS3 Compliant
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A, 10V	86 @ 10V	140	TO-220AB	Active	ROHS3 Compliant
IRF1018EPBF	Infineon	60	79	8.4 @ 47A, 10V	69 @ 10V	110	TO-220AB	Active	ROHS3 Compliant
PSMN4R6-60PS,127	Nexperia USA Inc.	60	100	4.6 @ 25A, 10V	70.8 @ 10V	211	TO-220AB	Obsolete	ROHS3 Compliant
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3 @ 25A, 10V	130 @ 10V	306	TO-220AB	Obsolete	ROHS3 Compliant
FQP13N06L	Fairchild Semiconductor	60	13.6	110 @ 6.8A, 10V	6.4 @ 5V	45	TO-220-3	Active	Not specified
STP16NF06	STMicroelectronics	60	16	100 @ 8A, 10V	13 @ 10V	45	TO-220	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Minimum Circuit Modification):

IRFZ34PBF is the primary recommended substitute. Manufactured by Vishay Siliconix, it maintains the same 60V/30A electrical specification with TO-220AB packaging. The device is currently in active production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The slightly higher on-state resistance (50 mOhm vs. 42 mOhm) and gate charge (46 nC vs. 30 nC) are within acceptable tolerance for most switching applications.

STP36NF06L from STMicroelectronics provides an alternative with active product status and ROHS3 compliance. Operating at 60V/30A, it features lower on-state resistance (40 mOhm) and reduced gate charge (17 nC @ 5V), resulting in improved switching efficiency. The TO-220 package is mechanically compatible with TO-220AB footprints.

For Enhanced Performance (Thermal Margin and Lower Losses):

IRF1010EZPBF and IRF1018EPBF from Infineon offer significantly higher current ratings (75A and 79A respectively) with substantially lower on-state resistance (8.5 mOhm and 8.4 mOhm). Both devices maintain 60V voltage rating, active product status, and ROHS3 compliance. These parts are suitable for applications where thermal performance or efficiency improvements are beneficial, though they require verification of gate drive circuit compatibility due to higher gate charge values.

For Cost-Sensitive Applications:

FQP30N06L from onsemi provides 60V/32A capability with lower on-state resistance (35 mOhm) and reduced gate charge (20 nC @ 5V). Although classified as obsolete, current inventory levels (15,265 pcs) support near-term procurement. ROHS3 compliance is confirmed.

Avoid for Direct Substitution:

FQP13N06L and STP16NF06 are rated below the 28A requirement (13.6A and 16A respectively) and are unsuitable for applications requiring the full current capacity of the IRFZ34E.

PSMN3R0-60PS,127 and PSMN4R6-60PS,127 are over-specified for most applications, with 100A ratings and significantly higher gate charge values that may require gate driver circuit redesign.

Frequently Asked Questions (FAQ)

Q1: Can I use a substitute part with higher current rating than the IRFZ34E?

A: Yes. Parts rated for 75A, 79A, or 100A continuous drain current are electrically compatible substitutes, provided the 60V drain-source voltage rating is maintained and the gate drive circuit can supply the required gate charge. Higher current ratings provide thermal margin and lower on-state resistance, reducing power dissipation. However, verify that the gate driver output impedance and switching frequency are compatible with the higher gate charge specifications of these devices.

Q2: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with identical pin configurations and mechanical footprints suitable for standard PCB layouts. TO-220AB and TO-220 designations refer to the same physical package. Parts specified as TO-220-3 are functionally equivalent for PCB mounting purposes. All substitute parts listed are compatible with existing IRFZ34E PCB designs.

Q3: Why is the IRFZ34E obsolete, and how does this affect substitution?

A: The IRFZ34E is classified as obsolete by Infineon Technologies, indicating discontinued production and limited future availability. Substitution is necessary to ensure design continuity and long-term supply chain reliability. Active-status alternatives such as IRFZ34PBF, STP36NF06L, IRF1010EZPBF, and IRF1018EPBF provide equivalent or superior electrical performance with confirmed ongoing production.

Q4: Does RoHS compliance affect electrical performance?

A: No. RoHS compliance is a regulatory and environmental requirement, not an electrical specification. ROHS3-compliant parts perform identically to non-compliant versions. For new designs and applications subject to regulatory requirements, ROHS3-compliant substitutes are mandatory. The IRFZ34E is RoHS non-compliant; all recommended active-status substitutes are ROHS3 compliant.

Q5: Can I substitute a part with lower on-state resistance?

A: Yes. Lower on-state resistance reduces power dissipation and improves thermal performance. Parts such as STP36NF06L (40 mOhm), FQP30N06L (35 mOhm), and IRF1010EZPBF (8.5 mOhm) offer reduced losses compared to the IRFZ34E (42 mOhm). This substitution is beneficial for efficiency-critical applications and requires no circuit modification.

Q6: What is gate charge, and why does it matter for substitution?

A: Gate charge (Qg) is the total charge required to switch the MOSFET from off to on state. Higher gate charge values require longer switching times or higher gate driver output current. The IRFZ34E specifies 30 nC @ 10V. Substitutes with higher gate charge (such as IRF1010EZPBF at 86 nC) may require verification of gate driver capability, particularly in high-frequency switching applications. Lower gate charge values (such as STP36NF06L at 17 nC) improve switching speed without circuit modification.

Q7: Are there any substitutes with lower current ratings than 28A?

A: Yes, but they are not recommended for direct substitution. FQP13N06L (13.6A) and STP16NF06 (16A) are rated below the IRFZ34E specification and cannot safely handle the full 28A current. These parts are suitable only for applications with reduced current requirements.

Q8: Which substitute offers the best balance of availability, compliance, and performance?

A: IRFZ34PBF from Vishay Siliconix provides optimal balance. It maintains the 60V/30A specification, is in active production with confirmed ROHS3 compliance, and offers 1,281 pcs current inventory. Electrical performance is nearly identical to the IRFZ34E with minimal circuit redesign required. STP36NF06L from STMicroelectronics is an alternative with superior on-state resistance and gate charge characteristics, also in active production with 1,308 pcs inventory.

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