IRFZ34 N-Channel MOSFET 60V 30A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFZ34 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 60V drain-to-source voltage and 30A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, indicating it is no longer in active production. Finding equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing manufacturing or repair operations. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ Id, Vgs	50 mOhm @ 18A, 10V	—
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Power Dissipation (Max)	88	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ34 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V or higher to ensure safe operation within the original design envelope.

Current Capacity: Continuous drain current (Id) at 25°C must be 30A or greater to support the original circuit's current requirements.

On-Resistance (Rds On): The maximum on-resistance specification must not exceed the original 50 mOhm @ 18A, 10V to maintain thermal performance and power dissipation characteristics.

Gate Threshold Voltage: Vgs(th) must remain within acceptable switching characteristics, specified at 4V @ 250µA for the original part.

Power Dissipation: Maximum power dissipation capability must be 88W or greater to handle thermal loads.

Mounting and Packaging: All substitutes must use Through Hole mounting in TO-220-3 package configuration to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature: The operating temperature range of -55°C to 175°C (TJ) must be maintained or exceeded.

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical and mechanical specifications) and Functional Equivalents (meeting or exceeding all critical parameters with minor variations in secondary characteristics).

Parameter Comparison

Parameter	IRFZ34	IRFZ34PBF	FQP30N06	FQP30N06L	IRFZ34NPBF	STP36NF06L
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	onsemi	Infineon Technologies	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	60	60	60	60	55	60
Id @ 25°C (A)	30	30	30	32	29	30
Rds On (Max) @ Id, Vgs (mOhm)	50 @ 18A, 10V	50 @ 18A, 10V	40 @ 15A, 10V	35 @ 16A, 10V	40 @ 16A, 10V	40 @ 15A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	2.5 @ 250µA	4 @ 250µA	2.5 @ 250µA
Gate Charge Qg (Max) @ Vgs (nC)	46 @ 10V	46 @ 10V	25 @ 10V	20 @ 5V	34 @ 10V	17 @ 5V
Vgs (Max) (V)	±20	±20	±25	±20	±20	±18
Input Capacitance Ciss (Max) @ Vds (pF)	1200 @ 25V	1200 @ 25V	945 @ 25V	1040 @ 25V	700 @ 25V	660 @ 25V
Power Dissipation (Max) (W)	88	88	79	79	68	70
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Obsolete	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFZ34PBF (Vishay Siliconix)

The IRFZ34PBF is a direct electrical equivalent to the IRFZ34, maintaining identical specifications across all critical parameters including 60V Vdss, 30A Id, 50 mOhm Rds On, and 88W power dissipation. The primary distinction is product status: IRFZ34PBF is Active, ensuring ongoing availability and supply chain support. IRFZ34PBF is ROHS3 Compliant, addressing regulatory requirements where the original IRFZ34 is RoHS non-compliant. Packaging is specified as Tube. This part is the preferred direct replacement for the obsolete IRFZ34.

IRFZ34NPBF (Infineon Technologies)

The IRFZ34NPBF is an Active product from Infineon Technologies, providing long-term supply assurance. This part operates at 55V Vdss (5V lower than the original 60V specification) and delivers 29A continuous drain current (1A lower than the original 30A). On-resistance is 40 mOhm @ 16A, 10V, representing a 20% improvement over the original 50 mOhm specification. Power dissipation is rated at 68W, which is 20W lower than the original 88W. IRFZ34NPBF is ROHS3 Compliant and maintains the same TO-220-3 package configuration. This part is suitable for applications where the reduced voltage and current ratings remain within design margins and where improved on-resistance characteristics provide thermal benefits.

FQP30N06L (onsemi)

The FQP30N06L is an Active product from onsemi's QFET® series, rated for 60V Vdss and 32A continuous drain current, exceeding the original 30A specification. On-resistance is 35 mOhm @ 16A, 10V, representing a 30% improvement over the original 50 mOhm specification. Gate threshold voltage is 2.5V @ 250µA, lower than the original 4V, enabling faster switching response. Power dissipation is 79W, which is 9W lower than the original 88W. Gate charge is reduced to 20 nC @ 5V, improving switching efficiency. FQP30N06L is ROHS3 Compliant and uses TO-220-3 packaging. This part is suitable for applications requiring improved thermal performance and switching characteristics.

STP36NF06L (STMicroelectronics)

The STP36NF06L is an Active product from STMicroelectronics' STripFET™ II series, rated for 60V Vdss and 30A continuous drain current, matching the original specifications. On-resistance is 40 mOhm @ 15A, 10V, representing a 20% improvement over the original 50 mOhm specification. Gate threshold voltage is 2.5V @ 250µA, lower than the original 4V. Power dissipation is 70W, which is 18W lower than the original 88W. Gate charge is significantly reduced to 17 nC @ 5V, providing superior switching efficiency. STP36NF06L is ROHS3 Compliant and uses TO-220-3 packaging. This part is suitable for applications where improved thermal performance and reduced switching losses are beneficial.

FQP30N06 (onsemi)

The FQP30N06 is an Obsolete product from onsemi's QFET® series, rated for 60V Vdss and 30A continuous drain current, matching the original specifications. On-resistance is 40 mOhm @ 15A, 10V, representing a 20% improvement over the original 50 mOhm specification. Power dissipation is 79W, which is 9W lower than the original 88W. FQP30N06 is ROHS3 Compliant and uses TO-220-3 packaging. Due to Obsolete status, this part is not recommended for new designs or long-term supply assurance, though it may be available from inventory sources.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ34PBF be used as a direct replacement for the IRFZ34?

A: Yes. The IRFZ34PBF is electrically and mechanically identical to the IRFZ34, with identical specifications for Vdss (60V), Id (30A), Rds On (50 mOhm @ 18A, 10V), and power dissipation (88W). The primary advantage is that IRFZ34PBF is an Active product with ROHS3 compliance, ensuring supply availability and regulatory compliance.

Q: What is the key difference between IRFZ34NPBF and the original IRFZ34?

A: The IRFZ34NPBF operates at 55V Vdss instead of 60V, and delivers 29A instead of 30A. On-resistance is improved to 40 mOhm, and power dissipation is reduced to 68W. These differences are acceptable in applications where the lower voltage and current ratings remain within design margins. IRFZ34NPBF is an Active product with ROHS3 compliance.

Q: Why do FQP30N06L and STP36NF06L have lower power dissipation ratings than the original IRFZ34?

A: Both parts feature improved on-resistance characteristics (35 mOhm and 40 mOhm respectively, compared to the original 50 mOhm) and reduced gate charge, resulting in lower switching losses and improved thermal efficiency. The lower power dissipation rating reflects these improvements, not a reduction in capability. Both parts maintain 60V Vdss and 30A (or higher) Id ratings.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant, addressing regulatory requirements where the original IRFZ34 is RoHS non-compliant. This is a significant advantage for applications subject to RoHS regulations.

Q: Can I use a substitute part with lower Vdss rating in my application?

A: The IRFZ34NPBF operates at 55V Vdss compared to the original 60V. Substitution is acceptable only if your circuit design operates at voltages below 55V and includes adequate safety margins. Verify that the lower voltage rating does not compromise circuit performance or reliability.

Q: What is the significance of gate threshold voltage differences between parts?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to turn the transistor on. The original IRFZ34 specifies 4V @ 250µA, while FQP30N06L and STP36NF06L specify 2.5V @ 250µA. Lower threshold voltages enable faster switching response and may reduce gate drive requirements. Verify that your gate drive circuit can accommodate these differences.

Q: Do all substitute parts use the same TO-220-3 package?

A: Yes. All substitute parts use Through Hole mounting in TO-220-3 package configuration, ensuring mechanical and electrical compatibility with existing PCB layouts. No PCB modifications are required for package compatibility.

Q: Which substitute part offers the best thermal performance?

A: STP36NF06L offers the best combination of thermal characteristics, with 40 mOhm on-resistance, 70W power dissipation rating, and significantly reduced gate charge (17 nC @ 5V). FQP30N06L provides similar benefits with 35 mOhm on-resistance and 79W power dissipation rating. Both parts are Active products with ROHS3 compliance.

Q: What is the difference between IRFZ34PBF and IRFZ34NPBF?

A: IRFZ34PBF is manufactured by Vishay Siliconix and is electrically identical to the original IRFZ34 (60V, 30A, 50 mOhm, 88W). IRFZ34NPBF is manufactured by Infineon Technologies and operates at reduced specifications (55V, 29A, 40 mOhm, 68W). Both are Active products with ROHS3 compliance. Choose IRFZ34PBF for direct equivalence or IRFZ34NPBF if the lower ratings are acceptable and improved on-resistance is beneficial.

Q: Are Obsolete substitute parts suitable for new designs?

A: FQP30N06 is classified as Obsolete. While it may be available from inventory sources, it is not recommended for new designs due to uncertain long-term supply availability. Active products such as IRFZ34PBF, IRFZ34NPBF, FQP30N06L, and STP36NF06L are preferred for new designs and ongoing production.

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