IRFZ30PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ30PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 50V drain-to-source voltage with 30A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete product status. Due to obsolescence, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRFZ30PBF	—
Manufacturer	Vishay Siliconix	—
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	50	V
Current - Continuous Drain (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ Id, Vgs	50	mOhm @ 16A, 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-220-3	—
Product Status	Obsolete	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFZ30PBF is determined by the following critical electrical and mechanical parameters:

Substitution Criteria:

FET Type: N-Channel (must match)
Package / Case: TO-220-3 (must match for mechanical compatibility)
Mounting Type: Through Hole (must match)
Continuous Drain Current (Id): 30A minimum (must meet or exceed)
Drain to Source Voltage (Vdss): Must equal or exceed 50V
Rds On (Max): Must not exceed specified values at rated conditions
Operating Temperature Range: Must support application requirements
RoHS Compliance: ROHS3 Compliant (must maintain compliance status)

The IRFZ34PBF qualifies as a direct substitute based on these parameters. It maintains identical FET type, package configuration, and continuous drain current rating while providing enhanced voltage rating and thermal performance characteristics.

Parameter Comparison

Parameter	IRFZ30PBF	IRFZ34PBF	Unit
Manufacturer	Vishay Siliconix	Vishay Siliconix	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	50	60	V
Current - Continuous Drain (Id) @ 25°C	30	30	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	50 @ 16A, 10V	50 @ 18A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	30 @ 10V	46 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1600 @ 25V	1200 @ 25V	pF
Power Dissipation (Max)	74	88	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 175	°C (TJ)
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IRFZ34PBF as Primary Substitute:

The IRFZ34PBF is the direct substitute for the obsolete IRFZ30PBF. Selection is based on the following engineering factors:

Product Status Consideration: The IRFZ30PBF is classified as Obsolete, while the IRFZ34PBF maintains Active product status. This ensures long-term component availability and supply chain continuity.

Electrical Compatibility: The IRFZ34PBF maintains identical continuous drain current (30A) and gate threshold voltage characteristics. The increased Vdss rating (60V versus 50V) provides enhanced voltage margin for applications originally designed for the IRFZ30PBF. The Rds On specification remains equivalent at the specified operating conditions.

Thermal Performance: The IRFZ34PBF provides superior power dissipation capability (88W versus 74W) and extended maximum junction temperature rating (-55°C to 175°C versus -55°C to 150°C), enabling operation in higher thermal environments.

Compliance Status: Both devices maintain ROHS3 Compliance certification, ensuring regulatory alignment for new production and replacement applications.

Package Compatibility: Identical TO-220-3 package and Through Hole mounting configuration ensure direct mechanical and electrical compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ34PBF directly replace the IRFZ30PBF in existing designs?

A: Yes. The IRFZ34PBF is electrically and mechanically compatible with the IRFZ30PBF. Both devices share identical package configuration (TO-220-3), continuous drain current rating (30A), and gate threshold voltage characteristics. The higher voltage rating and thermal performance of the IRFZ34PBF provide additional design margin.

Q: What is the primary difference between these two MOSFETs?

A: The IRFZ34PBF provides a higher drain-to-source voltage rating (60V versus 50V), increased power dissipation capability (88W versus 74W), and extended maximum junction temperature range (-55°C to 175°C versus -55°C to 150°C). The IRFZ30PBF is Obsolete, while the IRFZ34PBF is Active product status.

Q: Are there any gate charge differences that affect circuit design?

A: The IRFZ34PBF has a higher gate charge specification (46 nC versus 30 nC at 10V). This may require slightly longer gate drive times in high-frequency switching applications. Input capacitance is lower in the IRFZ34PBF (1200 pF versus 1600 pF at 25V), which can reduce gate drive power requirements.

Q: Does the IRFZ34PBF require different PCB layout or thermal management?

A: No. Both devices use identical TO-220-3 package configuration and Through Hole mounting. Existing PCB layouts require no modification. The improved thermal performance of the IRFZ34PBF may allow for reduced heatsink requirements in thermally constrained applications.

Q: Are both devices RoHS compliant?

A: Yes. Both the IRFZ30PBF and IRFZ34PBF maintain ROHS3 Compliance certification, ensuring regulatory compliance for production and replacement applications.

Q: Why is the IRFZ30PBF classified as Obsolete?

A: The IRFZ30PBF has reached end-of-life status. The IRFZ34PBF serves as the active replacement, offering improved electrical and thermal characteristics within the same package footprint.

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