IRFZ24NSTRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ24NSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 17A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts from active manufacturers is necessary to maintain design continuity and ensure long-term component availability for new production runs and system updates.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	17	A
On-State Resistance (Rds On) @ 10A, 10V	70	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	20	nC
Input Capacitance (Ciss) @ 25V	370	pF
Power Dissipation (Tc)	45	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFZ24NSTRLPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 17A at 25°C
On-State Resistance (Rds On): Must not exceed 70mOhm at specified test conditions
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Factors:

Gate Threshold Voltage (Vgs(th)): Acceptable range 1V to 4V
Maximum Gate Voltage (Vgs): Must support ±10V minimum
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Substitute parts are grouped into two categories: direct electrical equivalents with identical or superior ratings, and functional alternatives with enhanced performance characteristics that maintain backward compatibility within the specified parameter envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power (W)	Status	Package
IRFZ24NSTRLPBF	Infineon	55	17	70	4	20	370	45	Obsolete	D2PAK
BUK9675-55A,118	Nexperia	55	20	68	2	—	643	62	Active	D2PAK
IRFZ24SPBF	Vishay Siliconix	60	17	100	4	25	640	60	Active	D2PAK
IRFZ24STRLPBF	Vishay Siliconix	60	17	100	4	25	640	60	Active	D2PAK
IRFZ24STRRPBF	Vishay Siliconix	60	17	100	4	25	640	60	Active	D2PAK
PHB21N06LT,118	NXP USA Inc.	55	19	70	2	9.4	650	56	Active	D2PAK
STB140NF55T4	STMicroelectronics	55	80	8	4	142	5300	300	Active	D2PAK
STB16NF06LT4	STMicroelectronics	60	16	90	1	10	345	45	Active	D2PAK

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended for Drop-In Replacement):

BUK9675-55A,118 and PHB21N06LT,118 are the primary substitutes. Both maintain the 55V Vdss rating of the original part, meet or exceed the 17A current requirement, and achieve equivalent or superior on-state resistance specifications. BUK9675-55A,118 provides 20A continuous current with 68mOhm Rds On and carries AEC-Q101 automotive qualification. PHB21N06LT,118 delivers 19A continuous current with 70mOhm Rds On and includes RoHS3 compliance. Both devices are in active production status with unlimited moisture sensitivity rating (MSL 1).

Tier 2 - Voltage-Rated Alternatives (Compatible with Design Margin):

IRFZ24SPBF, IRFZ24STRLPBF, and IRFZ24STRRPBF are Vishay Siliconix variants with 60V Vdss rating, providing additional voltage margin above the original 55V specification. These parts maintain 17A continuous current and identical gate threshold voltage (4V). All three are in active production with RoHS3 compliance. The higher voltage rating introduces additional design margin for transient overvoltage conditions.

Tier 3 - High-Current Alternative (Performance Enhancement):

STB140NF55T4 from STMicroelectronics maintains the 55V Vdss rating but provides significantly enhanced current handling (80A) and dramatically reduced on-state resistance (8mOhm @ 40A, 10V). This device is suitable for applications requiring higher current capacity or lower conduction losses. The substantially increased gate charge (142nC) and input capacitance (5300pF) require verification of gate drive circuit compatibility.

Tier 4 - Marginal Alternative (Verification Required):

STB16NF06LT4 provides 60V Vdss and 16A continuous current, which approaches but does not fully meet the original 17A specification. On-state resistance is 90mOhm, exceeding the 70mOhm target. This device is suitable only when current margin exists in the application design.

All recommended substitutes maintain D2PAK surface mount packaging, -55°C to 175°C operating temperature range, and MSL 1 moisture sensitivity rating. All are RoHS3 compliant and REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Can IRFZ24SPBF directly replace IRFZ24NSTRLPBF in existing designs?

A: Yes. IRFZ24SPBF maintains identical current rating (17A), gate threshold voltage (4V), and D2PAK packaging. The 60V Vdss rating exceeds the original 55V specification, providing additional voltage margin. The higher on-state resistance (100mOhm vs. 70mOhm) results in increased conduction losses that must be evaluated against thermal design limits.

Q: What is the primary advantage of BUK9675-55A,118 as a substitute?

A: BUK9675-55A,118 maintains the exact 55V Vdss rating while providing superior current capacity (20A vs. 17A) and lower on-state resistance (68mOhm vs. 70mOhm). AEC-Q101 automotive qualification and active production status ensure long-term availability. Higher power dissipation capability (62W vs. 45W) supports demanding applications.

Q: Is STB140NF55T4 suitable for direct replacement?

A: STB140NF55T4 is not a direct replacement due to significantly different electrical characteristics. While it maintains 55V Vdss, the 80A current rating and 8mOhm on-state resistance represent a performance tier above the original device. Gate charge increases from 20nC to 142nC, requiring gate drive circuit verification. This device is appropriate only when enhanced performance is required and gate drive compatibility is confirmed.

Q: What packaging considerations apply to these substitutes?

A: All listed substitutes use D2PAK (TO-263-3) surface mount packaging, identical to the original IRFZ24NSTRLPBF. PCB footprint compatibility is maintained. Thermal pad dimensions and solder attachment procedures remain consistent across all alternatives.

Q: Which substitute offers the best balance of availability and compatibility?

A: IRFZ24STRLPBF from Vishay Siliconix provides optimal compatibility with 2114 units in stock, active production status, and RoHS3 compliance. Electrical characteristics match IRFZ24SPBF with 60V Vdss and 17A current rating. Tape & Reel packaging supports automated assembly processes.

Q: How does gate charge affect substitute selection?

A: Gate charge (Qg) determines gate drive circuit requirements. The original part specifies 20nC @ 10V. Substitutes range from 9.4nC (PHB21N06LT,118) to 142nC (STB140NF55T4). Lower gate charge reduces switching losses and simplifies gate drive design. Higher gate charge requires verification that existing gate drive circuits can supply adequate current within specified switching time windows.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification. REACH status is unaffected for all alternatives, confirming regulatory compliance for EU and international markets.

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