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IRFZ24NSTRL N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRFZ24NSTRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 17A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The IRFZ24NSTRL operates across a wide temperature range from -55°C to 175°C and is designed for general-purpose switching applications requiring moderate current handling in compact surface mount form factors.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 17 | A |
| On-Resistance (Rds On) @ 10A, 10V | 70 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 20 | nC |
| Input Capacitance (Ciss) @ 25V | 370 | pF |
| Power Dissipation (Tc) | 45 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | D2PAK (TO-263-3) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IRFZ24NSTRL is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss) must equal or exceed 55V
- Continuous Drain Current (Id) must equal or exceed 17A
- On-Resistance (Rds On) must not significantly exceed 70mOhm to maintain thermal performance
- Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
- Operating temperature range must span -55°C to 175°C
Mechanical Compatibility Criteria:
- Package type must be D2PAK (TO-263-3) surface mount
- Pin configuration must match the original 2 leads plus tab arrangement
- Moisture Sensitivity Level (MSL) must be 1 (Unlimited) or equivalent
Substitute parts are grouped into two categories based on these parameters:
Category A - Direct Functional Equivalents: Parts with matching or superior Vdss (55V or 60V), matching or superior Id (17A or higher), and comparable Rds On characteristics. These include IRFZ24SPBF, IRFZ24STRLPBF, and IRFZ24STRRPBF.
Category B - Enhanced Performance Alternatives: Parts with matching Vdss (55V), superior current handling (19A to 20A), and improved on-resistance characteristics. These include BUK9675-55A,118 and PHB21N06LT,118.
Category C - High-Current Alternatives: Parts with matching Vdss (55V) but significantly higher current ratings (80A). These are suitable only when higher current capacity is required and thermal management is adequate. This includes STB140NF55T4.
Parameter Comparison
| Parameter | IRFZ24NSTRL | IRFZ24SPBF | IRFZ24STRLPBF | IRFZ24STRRPBF | BUK9675-55A,118 | PHB21N06LT,118 | STB16NF06LT4 | STB140NF55T4 |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | Infineon | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Nexperia USA Inc. | NXP USA Inc. | STMicroelectronics | STMicroelectronics |
| Vdss (V) | 55 | 60 | 60 | 60 | 55 | 55 | 60 | 55 |
| Id @ 25°C (A) | 17 | 17 | 17 | 17 | 20 | 19 | 16 | 80 |
| Rds On @ 10A, 10V (mOhm) | 70 | 100 | 100 | 100 | 68 | 70 | 90 | 8 |
| Vgs(th) @ 250µA (V) | 4 | 4 | 4 | 4 | 2 | 2 | 1 | 4 |
| Qg @ 10V (nC) | 20 | 25 | 25 | 25 | — | 9.4 | 10 | 142 |
| Ciss @ 25V (pF) | 370 | 640 | 640 | 640 | 643 | 650 | 345 | 5300 |
| Power Dissipation Tc (W) | 45 | 60 | 60 | 60 | 62 | 56 | 45 | 300 |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 |
| Package | D2PAK | TO-263 (D2PAK) | D2PAK | TO-263 (D2PAK) | D2PAK | D2PAK | D2PAK | D2PAK |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active | Active |
| RoHS Status | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (Preferred):
IRFZ24SPBF, IRFZ24STRLPBF, and IRFZ24STRRPBF are the primary substitutes for the IRFZ24NSTRL. All three are manufactured by Vishay Siliconix and maintain the same base product number (IRFZ24). These parts are active products with ROHS3 compliance, addressing the obsolescence and regulatory status of the original part. The Vdss rating increases to 60V, providing additional voltage margin. The continuous drain current remains at 17A, matching the original specification. All three variants are available in D2PAK packaging with identical pin configurations.
The primary difference among these three is packaging format: IRFZ24SPBF is supplied in Tube packaging (20,200 units in stock), IRFZ24STRLPBF is supplied in Tape & Reel (2,114 units in stock), and IRFZ24STRRPBF is supplied in Tape & Reel (908 units in stock). Selection between these three should be based on procurement and assembly requirements rather than electrical performance.
For Enhanced Current Capacity:
BUK9675-55A,118 (Nexperia USA Inc.) and PHB21N06LT,118 (NXP USA Inc.) provide superior current handling at 20A and 19A respectively, while maintaining the 55V Vdss rating. Both are active products with ROHS3 compliance and AEC-Q101 automotive qualification (BUK9675-55A,118). On-resistance characteristics are comparable to or better than the original part. These substitutes are suitable when additional current margin is required without exceeding the original voltage specification.
For High-Current Applications:
STB140NF55T4 (STMicroelectronics) provides 80A continuous drain current with 55V Vdss in D2PAK packaging. This part is suitable only for applications requiring significantly higher current capacity. The substantially lower on-resistance (8mOhm) and higher power dissipation rating (300W) indicate a different device class. Gate charge and input capacitance are significantly higher, requiring different drive circuit considerations.
For Voltage-Tolerant Applications:
STB16NF06LT4 (STMicroelectronics) offers 60V Vdss with 16A continuous drain current. This part is suitable when the application can tolerate slightly reduced current capacity in exchange for improved on-resistance characteristics and lower gate charge requirements.
Regulatory and Compliance Considerations:
All active substitute parts listed are ROHS3 compliant, addressing the non-compliant status of the obsolete IRFZ24NSTRL. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status. The ECCN classification (EAR99) and HTSUS codes remain consistent across all substitutes.
Frequently Asked Questions (FAQ)
Q: Can IRFZ24SPBF, IRFZ24STRLPBF, and IRFZ24STRRPBF be used interchangeably with IRFZ24NSTRL?
A: Yes, these three Vishay Siliconix parts are direct functional equivalents. All maintain 17A continuous drain current, D2PAK packaging, and identical pin configurations. The primary differences are packaging format (Tube versus Tape & Reel) and inventory availability. Electrical performance is equivalent for standard switching applications.
Q: What is the significance of the increased Vdss rating (60V) in the Vishay substitutes compared to the original 55V specification?
A: The increased Vdss rating provides additional voltage margin and improved reliability in applications operating near the maximum voltage specification. This is a beneficial characteristic that does not compromise compatibility. Applications designed for 55V operation function correctly with 60V-rated devices.
Q: Can BUK9675-55A,118 be used as a direct replacement?
A: BUK9675-55A,118 is a functional substitute with superior current capacity (20A versus 17A) and comparable on-resistance (68mOhm versus 70mOhm). The 55V Vdss rating matches the original specification exactly. D2PAK packaging and pin configuration are identical. This part is suitable for direct replacement when higher current margin is acceptable.
Q: What are the key differences between PHB21N06LT,118 and the original IRFZ24NSTRL?
A: PHB21N06LT,118 provides 19A continuous drain current (versus 17A), maintains 55V Vdss, and offers comparable on-resistance (70mOhm). The gate threshold voltage is lower (2V versus 4V), which may affect drive circuit timing. Gate charge is significantly lower (9.4nC versus 20nC), reducing drive power requirements. D2PAK packaging and pin configuration are identical.
Q: Is STB140NF55T4 suitable for applications currently using IRFZ24NSTRL?
A: STB140NF55T4 is a high-current alternative (80A) with significantly different electrical characteristics. The substantially lower on-resistance (8mOhm), higher gate charge (142nC), and much higher input capacitance (5300pF) require different drive circuit design. This part is suitable only for applications requiring substantially higher current capacity and where thermal management and drive circuitry can be redesigned accordingly.
Q: What packaging options are available for the substitute parts?
A: All substitute parts are supplied in D2PAK (TO-263-3) surface mount packaging with identical pin configurations. Packaging format variations include Tube (IRFZ24SPBF), Tape & Reel (IRFZ24STRLPBF, IRFZ24STRRPBF, BUK9675-55A,118, STB140NF55T4), Cut Tape & Digi-Reel (STB16NF06LT4), and Bulk (PHB21N06LT,118). Selection should be based on assembly process requirements.
Q: Are all substitute parts RoHS compliant?
A: Yes, all active substitute parts listed are ROHS3 compliant. The original IRFZ24NSTRL is RoHS non-compliant. Substitution with any of the listed active parts addresses regulatory compliance requirements for new designs and production.
Q: What is the impact of different gate threshold voltages on circuit compatibility?
A: Gate threshold voltage (Vgs(th)) affects the minimum gate voltage required to turn the device on. The original IRFZ24NSTRL specifies 4V @ 250µA. Substitutes with lower Vgs(th) values (such as BUK9675-55A,118 at 2V or STB16NF06LT4 at 1V) turn on at lower gate voltages, potentially improving switching speed and reducing drive power. Substitutes with matching Vgs(th) (4V) provide identical drive circuit behavior. Lower Vgs(th) values do not create compatibility issues in standard drive circuits.
Q: How does on-resistance affect thermal performance in the application?
A: On-resistance (Rds On) directly determines power dissipation during conduction: P = I²R. The original IRFZ24NSTRL specifies 70mOhm @ 10A, 10V. Substitutes with lower on-resistance (such as BUK9675-55A,118 at 68mOhm or STB140NF55T4 at 8mOhm) generate less heat for the same current. Substitutes with higher on-resistance (such as IRFZ24SPBF at 100mOhm) generate more heat. For applications operating at or near maximum current, on-resistance differences become significant for thermal management.
Q: What is the significance of gate charge differences among substitute parts?
A: Gate charge (Qg) determines the energy required to switch the device and affects switching speed. The original IRFZ24NSTRL specifies 20nC @ 10V. Lower gate charge (such as PHB21N06LT,118 at 9.4nC or STB16NF06LT4 at 10nC) reduces drive circuit power requirements and enables faster switching. Higher gate charge (such as IRFZ24SPBF at 25nC or STB140NF55T4 at 142nC) increases drive power requirements. Gate charge differences do not prevent substitution but affect drive circuit design optimization.
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