IRFZ20 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ20 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 50V drain-to-source voltage with 15A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and dissipates a maximum of 40W at the case temperature. The IRFZ20 is classified as obsolete, making identification of active equivalent parts necessary for ongoing design support, procurement, and production continuity. The IRFZ20PBF serves as the direct parametric equivalent with identical electrical specifications and active product status.

Substiute Parts

IRFZ20

Vishay SiliconixIn Stock: 15361IRFZ20 Datasheet

Current PartRFQ

IRFZ20PBF

Vishay SiliconixIn Stock: 15168IRFZ20PBF Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFZ20 is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameter Equivalence:

• Drain to Source Voltage (Vdss): 50V
• Continuous Drain Current (Id) @ 25°C: 15A (Tc)
• On-State Drain Resistance (Rds On) @ 10A, 10V: 100mOhm
• Gate Threshold Voltage (Vgs(th)) @ 250µA: 4V
• Gate Charge (Qg) @ 10V: 17nC
• Maximum Gate Voltage (Vgs): ±20V
• Input Capacitance (Ciss) @ 25V: 850pF
• Power Dissipation (Max): 40W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameter Equivalence:

• Package Type: TO-220AB (TO-220-3)
• Mounting Type: Through Hole

The IRFZ20PBF meets all electrical and mechanical equivalence criteria and is classified as an active product with current manufacturing status and RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

The IRFZ20PBF is the direct substitute for the obsolete IRFZ20. Both parts are manufactured by Vishay Siliconix and share identical electrical and mechanical specifications across all critical parameters including voltage rating, current capacity, on-state resistance, gate characteristics, and thermal performance.

The primary distinction between the two parts is product status and regulatory compliance. The IRFZ20 is classified as obsolete and carries RoHS non-compliant status. The IRFZ20PBF is an active product with ROHS3 compliance, ensuring availability for current and future production requirements and meeting modern environmental and regulatory standards.

For new designs or production continuity of existing designs, the IRFZ20PBF is the appropriate selection. The identical electrical and mechanical parameters ensure direct functional equivalence without circuit modification or re-qualification. The TO-220AB package and through-hole mounting type remain unchanged, allowing for direct board-level substitution.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ20PBF be used as a direct replacement for the IRFZ20 in existing designs?

A: Yes. The IRFZ20PBF is electrically and mechanically identical to the IRFZ20 across all specified parameters. Both devices feature 50V Vdss, 15A continuous drain current, 100mOhm Rds On, and identical gate characteristics. The TO-220AB package and through-hole mounting are unchanged, enabling direct substitution without circuit modification.

Q: What is the primary reason for substituting the IRFZ20?

A: The IRFZ20 is classified as obsolete. The IRFZ20PBF is the active equivalent part, ensuring ongoing availability and supply chain continuity. Additionally, the IRFZ20PBF carries ROHS3 compliance, meeting current environmental and regulatory requirements.

Q: Are there any differences in thermal performance between the IRFZ20 and IRFZ20PBF?

A: No. Both parts are rated for 40W maximum power dissipation at the case temperature and operate across the same temperature range of -55°C to 150°C (TJ).

Q: Does the packaging differ between these parts?

A: The IRFZ20 and IRFZ20PBF are both supplied in TO-220AB through-hole packages. The IRFZ20PBF is supplied in tube packaging, while the IRFZ20 packaging format is not specified in the available data. Both are compatible with standard TO-220 board layouts and mounting procedures.

Q: What are the gate drive requirements for the IRFZ20PBF?

A: The IRFZ20PBF requires a maximum gate voltage of ±20V. The gate threshold voltage is 4V at 250µA, and the gate charge is 17nC at 10V. These specifications are identical to the IRFZ20 and determine the gate driver circuit requirements.

Q: Is the IRFZ20PBF suitable for high-frequency switching applications?

A: The gate charge of 17nC at 10V and input capacitance of 850pF at 25V define the switching characteristics. These parameters are identical between the IRFZ20 and IRFZ20PBF, ensuring equivalent performance in switching applications.