IRFZ14STRR N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFZ14STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 10A continuous drain current. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for general-purpose switching applications requiring moderate voltage and current ratings. The part maintains Active product status with 956 units currently in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the same package form factor while meeting or exceeding the original specifications. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements allow for enhanced performance characteristics within the same mechanical footprint.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	10	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	200	mOhm @ 6A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	11	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	300	pF @ 25V
Power Dissipation (Max)	3.7 / 43	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFZ14STRR is determined by the following critical parameters that must be maintained or exceeded:

Mandatory Compatibility Parameters:

Package Type: TO-263 (D2PAK) Surface Mount form factor
FET Type: N-Channel MOSFET technology
Drain-to-Source Voltage (Vdss): Minimum 60V rating
Gate Threshold Voltage (Vgs(th)): Maximum 4V @ 250µA
Maximum Gate Voltage (Vgs): ±20V tolerance
Operating Temperature Range: -55°C to 175°C (TJ)

Performance Enhancement Parameters:

Continuous Drain Current (Id) may exceed 10A
On-Resistance (Rds On) may be lower than 200mOhm
Power Dissipation capability may exceed 43W (Tc)
Gate Charge (Qg) and Input Capacitance (Ciss) may vary within acceptable switching performance ranges

The IRF3808STRLPBF qualifies as a direct substitute because it maintains the TO-263 (D2PAK) package, N-Channel MOSFET technology, and exceeds the voltage and current specifications while preserving gate threshold and maximum gate voltage parameters.

Parameter Comparison

Parameter	IRFZ14STRR (Main Part)	IRF3808STRLPBF (Substitute)	Compatibility
Manufacturer	Vishay Siliconix	Infineon Technologies	Different manufacturer
FET Type	N-Channel	N-Channel	Match
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Match
Drain-to-Source Voltage (Vdss)	60V	75V	Substitute exceeds specification
Continuous Drain Current (Id) @ 25°C	10A (Tc)	106A (Tc)	Substitute exceeds specification
On-Resistance (Rds On Max) @ Id, Vgs	200mOhm @ 6A, 10V	7mOhm @ 82A, 10V	Substitute provides superior performance
Gate Threshold Voltage (Vgs(th) Max) @ Id	4V @ 250µA	4V @ 250µA	Match
Gate Charge (Qg Max) @ Vgs	11nC @ 10V	220nC @ 10V	Substitute higher; acceptable for switching applications
Vgs (Max)	±20V	±20V	Match
Input Capacitance (Ciss Max) @ Vds	300pF @ 25V	5310pF @ 25V	Substitute higher; acceptable for switching applications
Power Dissipation (Max)	3.7W (Ta), 43W (Tc)	200W (Tc)	Substitute exceeds specification
Operating Temperature Range	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	Match
Package Type	TO-263 (D2PAK)	TO-263 (D2PAK)	Match
Mounting Type	Surface Mount	Surface Mount	Match
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Substitute provides enhanced compliance
Product Status	Active	Active	Both actively manufactured

Engineering Selection Recommendations

Primary Substitute: IRF3808STRLPBF

The IRF3808STRLPBF is a qualified substitute for the IRFZ14STRR based on the following engineering criteria:

Electrical Compatibility: The IRF3808STRLPBF maintains all critical electrical parameters required for direct substitution. The gate threshold voltage (4V @ 250µA) and maximum gate voltage (±20V) are identical to the original part. The drain-to-source voltage rating of 75V exceeds the 60V requirement, providing additional design margin. The continuous drain current of 106A substantially exceeds the 10A specification, allowing operation at the original current level with reduced thermal stress.

Mechanical Compatibility: Both devices utilize the TO-263 (D2PAK) Surface Mount package with identical pinout and footprint. No PCB layout modifications are required for substitution.

Compliance Enhancement: The IRF3808STRLPBF carries ROHS3 compliance certification, whereas the IRFZ14STRR is RoHS non-compliant. This substitution improves regulatory compliance for applications subject to RoHS requirements. The IRF3808STRLPBF also carries REACH Unaffected status.

Thermal Performance: The IRF3808STRLPBF provides 200W maximum power dissipation at Tc, compared to 43W for the IRFZ14STRR. This enhanced thermal capability reduces junction temperature rise during operation.

Inventory Availability: The IRF3808STRLPBF maintains higher stock levels (4380 units) compared to the IRFZ14STRR (956 units), supporting supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IRF3808STRLPBF be used as a direct replacement for the IRFZ14STRR without circuit modifications?

A: Yes. The IRF3808STRLPBF is a direct substitute within the same TO-263 (D2PAK) package with identical pinout. No circuit modifications are required. The gate threshold voltage and maximum gate voltage specifications are identical, ensuring compatible gate drive requirements.

Q: What is the impact of the higher gate charge (220nC vs. 11nC) on circuit performance?

A: The higher gate charge in the IRF3808STRLPBF requires slightly longer switching times and marginally higher gate drive current. For most general-purpose switching applications, this difference is negligible. Applications with extremely high switching frequencies (>1 MHz) or very low gate drive impedance may require evaluation of gate drive circuit performance.

Q: Does the higher input capacitance (5310pF vs. 300pF) affect circuit operation?

A: The higher input capacitance in the IRF3808STRLPBF results in increased capacitive loading on the gate drive circuit. For standard gate drive implementations operating at switching frequencies below 500 kHz, this difference is acceptable. High-frequency switching applications should verify gate drive circuit capability to supply the required gate current within the specified rise and fall time parameters.

Q: Is the 75V Vdss rating of the IRF3808STRLPBF compatible with 60V circuit designs?

A: Yes. The higher voltage rating provides additional design margin and does not create compatibility issues. The device operates safely at voltages below its maximum rating. No circuit modifications are required.

Q: What is the significance of the RoHS3 compliance difference?

A: The IRF3808STRLPBF carries ROHS3 compliance, whereas the IRFZ14STRR is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the IRF3808STRLPBF provides compliant operation. For applications without RoHS requirements, both parts are functionally equivalent.

Q: Are there any thermal management considerations when substituting to the IRF3808STRLPBF?

A: The IRF3808STRLPBF provides significantly higher power dissipation capability (200W vs. 43W at Tc). This allows operation at the original current level with lower junction temperature rise. Existing thermal management provisions (heatsinking, PCB copper area) remain adequate and may be optimized for improved thermal performance.

Q: What is the package compatibility between these two devices?

A: Both devices use the TO-263 (D2PAK) Surface Mount package with identical lead configuration (2 Leads + Tab). PCB footprints are directly compatible with no layout modifications required.

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