IRFZ14 N-Channel MOSFET 60V 10A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFZ14 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 10A continuous drain current in a through-hole TO-220AB package. The device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts with active product status are necessary for new designs and ongoing production requirements. Substitute parts are selected based on matching or exceeding critical electrical parameters while maintaining compatible mechanical packaging.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	10	A (Tc)
On-State Resistance (Rds On) @ 6A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	11	nC
Power Dissipation (Max)	43	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitute parts are organized into two categories based on substitution criteria:

Direct Equivalent (Parametric Match): Parts that maintain identical electrical specifications for Vdss, Id, Rds On, Vgs(th), and Gate Charge while offering active product status and improved compliance certifications. These parts are pin-compatible and functionally interchangeable in existing designs.

Manufacturer Recommended Alternatives (Enhanced Performance): Parts that exceed the IRFZ14 specifications in one or more critical parameters (Vdss, Id, Rds On, or Power Dissipation) while maintaining the same package type and gate drive voltage compatibility. These parts provide superior performance margins and are suitable for applications requiring higher current handling, lower on-state resistance, or higher voltage ratings.

Key Parameters for Substitution Determination:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 10A
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Package Type: TO-220-3 (through-hole mounting required)
Operating Temperature Range: Must support -55°C to 175°C minimum

Parameter Comparison

Part Number	Manufacturer	Product Status	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	RoHS Status
IRFZ14	Vishay Siliconix	Obsolete	60	10 (Tc)	200 @ 6A, 10V	4 @ 250µA	11 @ 10V	43 (Tc)	TO-220-3	Non-compliant
IRFZ14PBF	Vishay Siliconix	Active	60	10 (Tc)	200 @ 6A, 10V	4 @ 250µA	11 @ 10V	43 (Tc)	TO-220-3	ROHS3 Compliant
IRFZ10PBF	Vishay Siliconix	Active	60	10 (Tc)	200 @ 6A, 10V	4 @ 250µA	11 @ 10V	43 (Tc)	TO-220-3	ROHS3 Compliant
BUZ11-NR4941	onsemi	Active	50	30 (Tc)	40 @ 15A, 10V	4 @ 1mA	—	75 (Tc)	TO-220-3	ROHS3 Compliant
FDP050AN06A0	onsemi	Active	60	18 (Ta), 80 (Tc)	5 @ 80A, 10V	4 @ 250µA	80 @ 10V	245 (Tc)	TO-220-3	ROHS3 Compliant
FDP060AN08A0	onsemi	Active	75	16 (Ta), 80 (Tc)	6 @ 80A, 10V	4 @ 250µA	95 @ 10V	255 (Tc)	TO-220-3	ROHS3 Compliant
FDP070AN06A0	Fairchild Semiconductor	Active	60	15 (Ta), 80 (Tc)	7 @ 80A, 10V	4 @ 250µA	66 @ 10V	175 (Tc)	TO-220-3	—
FDP16AN08A0	Fairchild Semiconductor	Active	75	9 (Ta), 58 (Tc)	16 @ 58A, 10V	4 @ 250µA	42 @ 10V	135 (Tc)	TO-220-3	—
FDP2532	onsemi	Active	150	8 (Ta), 79 (Tc)	16 @ 33A, 10V	4 @ 250µA	107 @ 10V	310 (Tc)	TO-220-3	ROHS3 Compliant
FDP2552	onsemi	Active	150	5 (Ta), 37 (Tc)	36 @ 16A, 10V	4 @ 250µA	51 @ 10V	150 (Tc)	TO-220-3	ROHS3 Compliant
FDP2572	onsemi	Active	150	4 (Ta), 29 (Tc)	54 @ 9A, 10V	4 @ 250µA	34 @ 10V	135 (Tc)	TO-220-3	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent Selection:

IRFZ14PBF and IRFZ10PBF are direct parametric equivalents to the IRFZ14, offering identical electrical specifications across all critical parameters. Both parts are manufactured by Vishay Siliconix and maintain the same 60V/10A rating, on-state resistance, and gate charge characteristics. IRFZ14PBF and IRFZ10PBF carry active product status and ROHS3 compliance, making them suitable for new designs and production environments with RoHS requirements. These parts provide drop-in replacement capability for existing IRFZ14 applications without circuit modification.

Enhanced Performance Selection:

For applications requiring improved performance margins, FDP050AN06A0 (onsemi) provides matching 60V Vdss rating with significantly enhanced current handling (80A Tc) and substantially reduced on-state resistance (5 mOhm). This part is suitable for designs where thermal management and efficiency are critical. FDP070AN06A0 (Fairchild Semiconductor) offers similar 60V rating with 80A capability and 7 mOhm on-state resistance, providing an alternative source for enhanced performance applications.

Higher Voltage Rating Selection:

FDP060AN08A0 (onsemi) and FDP16AN08A0 (Fairchild Semiconductor) provide 75V Vdss rating, suitable for applications requiring additional voltage margin. FDP2532, FDP2552, and FDP2572 (onsemi) offer 150V Vdss rating for high-voltage applications, with varying current and power dissipation ratings to match specific design requirements.

Compliance Considerations:

All recommended substitute parts carry active product status. IRFZ14PBF, IRFZ10PBF, FDP050AN06A0, FDP060AN08A0, FDP2532, FDP2552, and FDP2572 are ROHS3 compliant. Fairchild Semiconductor parts (FDP070AN06A0, FDP16AN08A0) do not specify RoHS status in provided data. Selection should account for regulatory requirements in target markets.

Frequently Asked Questions (FAQ)

Q: Can IRFZ14PBF directly replace IRFZ14 in existing designs?

A: Yes. IRFZ14PBF is a direct parametric equivalent with identical Vdss (60V), Id (10A), Rds On (200 mOhm), and gate drive characteristics. Pin configuration and package (TO-220-3) are identical. No circuit modifications are required.

Q: What is the difference between IRFZ14PBF and IRFZ10PBF?

A: Both parts are parametric equivalents with identical electrical specifications. The primary difference is the base product number designation. Both are manufactured by Vishay Siliconix, carry active product status, and are ROHS3 compliant. Selection between these parts may depend on supplier availability and part numbering conventions in procurement systems.

Q: When should I select FDP050AN06A0 instead of IRFZ14PBF?

A: FDP050AN06A0 is selected when the application requires enhanced performance characteristics. This part maintains the 60V Vdss rating but provides 80A continuous drain current (versus 10A) and significantly lower on-state resistance (5 mOhm versus 200 mOhm). Applications with high current demands or stringent thermal requirements benefit from this selection. Gate drive voltage compatibility (10V) remains identical.

Q: Are all substitute parts compatible with 10V gate drive voltage?

A: Yes. All substitute parts listed maintain Vgs(th) of 4V at specified test conditions and support ±20V maximum gate voltage, ensuring compatibility with standard 10V gate drive circuits used with the IRFZ14.

Q: What is the significance of the TO-220-3 package specification?

A: TO-220-3 is a through-hole package with three leads (Gate, Drain, Source). All substitute parts maintain this package type, ensuring mechanical compatibility with existing PCB layouts and heatsink mounting arrangements. No board redesign is required when substituting parts within this package family.

Q: Can BUZ11-NR4941 replace IRFZ14 in all applications?

A: BUZ11-NR4941 is not a direct equivalent. While it provides enhanced current handling (30A) and lower on-state resistance (40 mOhm), it has a lower Vdss rating (50V versus 60V). This part is suitable only for applications where the 50V rating is acceptable. Applications requiring the full 60V rating must select alternatives with matching or higher Vdss specifications.

Q: What does "Tc" versus "Ta" mean in current ratings?

A: Tc denotes continuous drain current at case temperature (typically 25°C), representing the maximum sustained current under specified thermal conditions. Ta denotes continuous drain current at ambient temperature. Tc ratings are generally higher due to improved heat dissipation at the case. Design calculations should use the appropriate rating based on thermal management strategy.

Q: Are higher voltage-rated parts (75V, 150V) suitable for 60V applications?

A: Yes. Parts with higher Vdss ratings (FDP060AN08A0 at 75V, FDP2532/FDP2552/FDP2572 at 150V) are suitable for 60V applications. The higher voltage rating provides additional safety margin and does not degrade performance in lower-voltage circuits. Selection depends on application requirements for voltage margin, current capacity, and thermal performance.

Q: What is the impact of different on-state resistance values on circuit performance?

A: Lower on-state resistance (Rds On) reduces power dissipation and heat generation during conduction. IRFZ14 has 200 mOhm Rds On, while enhanced alternatives range from 5 to 54 mOhm depending on the part. Lower Rds On values improve efficiency and reduce thermal management requirements, particularly in high-current applications.

Q: Do all substitute parts have identical gate charge characteristics?

A: No. Gate charge (Qg) varies among substitute parts. IRFZ14 has 11 nC Qg, while enhanced performance parts have higher values (up to 107 nC for FDP2532). Higher gate charge requires more drive current and longer switching times. Gate drive circuit design should account for these differences to ensure proper switching performance.

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