IRFZ10PBF N-Channel MOSFET 60V 10A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFZ10PBF is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 10A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and dissipates a maximum of 43W at the case temperature. The IRFZ10PBF maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements permit tolerance of parametric variations while maintaining functional compatibility within the application circuit. Substitution becomes necessary due to inventory constraints, supply chain discontinuities, or design optimization opportunities.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	10	A (Tc)
Power Dissipation (Max)	43	W (Tc)
Rds On (Max) @ 6A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V (Max)
Gate Charge (Qg) @ 10V	11	nC (Max)
Input Capacitance (Ciss) @ 25V	300	pF (Max)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IRFZ10PBF are classified into two categories based on parametric equivalence and manufacturer recommendation:

Parametric Equivalent Classification: Parts that maintain identical or functionally equivalent electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance. These parts are direct functional replacements with no circuit redesign required.

Manufacturer Recommended Classification: Parts that exceed the baseline specifications in one or more parameters while maintaining compatibility with the primary voltage and current ratings. These parts offer enhanced performance characteristics and are suitable for applications where improved thermal performance or reduced on-resistance is beneficial.

The substitution logic is based on the following key parameters:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 10A at 25°C
Package Type: Must be TO-220 variant for through-hole mounting compatibility
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide Semiconductor
RoHS Compliance: Must maintain ROHS3 compliance status

Parameter Comparison

Parameter	IRFZ10PBF	IRFZ14PBF	MTP3055VL	Unit
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	10	10	12	A (Tc)
Power Dissipation (Max)	43	43	48	W (Tc)
Rds On (Max) @ 6A	200	200	180	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	4	2	V (Max)
Gate Charge (Qg) (Max)	11	11	10	nC
Input Capacitance (Ciss) @ 25V	300	300	570	pF (Max)
Operating Temperature Range	-55 to 175	-55 to 175	-65 to 175	°C (TJ)
Package Type	TO-220AB	TO-220AB	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active

Engineering Selection Recommendations

IRFZ14PBF (Parametric Equivalent): The IRFZ14PBF is a direct parametric equivalent to the IRFZ10PBF. Both devices are manufactured by Vishay Siliconix and share identical electrical specifications across all critical parameters: 60V Vdss, 10A continuous drain current, 200mOhm Rds On, 4V gate threshold voltage, 11nC gate charge, and 300pF input capacitance. Both devices are housed in TO-220AB packages and maintain ROHS3 compliance with Active product status. The IRFZ14PBF is suitable for direct substitution without circuit modification.

MTP3055VL (Manufacturer Recommended): The MTP3055VL is a manufacturer-recommended substitute manufactured by onsemi. This device exceeds the baseline IRFZ10PBF specifications in three key areas: continuous drain current (12A versus 10A), power dissipation (48W versus 43W), and on-resistance (180mOhm versus 200mOhm at 6A). The MTP3055VL maintains the same 60V Vdss rating and operates across an extended temperature range (-65°C to 175°C versus -55°C to 175°C). The device is housed in a TO-220-3 through-hole package and maintains ROHS3 compliance. The MTP3055VL is suitable for applications requiring enhanced thermal performance or reduced conduction losses. The increased input capacitance (570pF versus 300pF) and lower gate threshold voltage (2V versus 4V) require verification of gate drive circuit compatibility.

All three devices maintain Active product status and ROHS3 compliance, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ14PBF replace the IRFZ10PBF in all applications?

A: Yes. The IRFZ14PBF is a parametric equivalent with identical electrical specifications. No circuit redesign is required. Both devices share the same Vdss (60V), Id (10A), Rds On (200mOhm), Vgs(th) (4V), gate charge (11nC), and input capacitance (300pF). Both are housed in TO-220AB packages and maintain ROHS3 compliance.

Q: What are the key differences between the IRFZ10PBF and MTP3055VL?

A: The MTP3055VL offers enhanced performance specifications: higher continuous drain current (12A versus 10A), higher power dissipation rating (48W versus 43W), and lower on-resistance (180mOhm versus 200mOhm). The MTP3055VL operates across a wider temperature range (-65°C to 175°C). However, the MTP3055VL has higher input capacitance (570pF versus 300pF) and lower gate threshold voltage (2V versus 4V), which may affect gate drive circuit performance.

Q: Are all three devices pin-compatible?

A: Yes. All three devices are housed in TO-220 through-hole packages with identical pin configurations (Gate, Drain, Source). The IRFZ10PBF and IRFZ14PBF use TO-220AB packaging, while the MTP3055VL uses TO-220-3 packaging. Both TO-220AB and TO-220-3 are functionally equivalent for through-hole PCB mounting.

Q: Which substitute should I select for thermal management applications?

A: The MTP3055VL is recommended for applications requiring enhanced thermal performance. The device offers higher power dissipation capability (48W versus 43W) and lower on-resistance (180mOhm versus 200mOhm), resulting in reduced heat generation during operation. The extended operating temperature range (-65°C to 175°C) provides additional thermal margin.

Q: Do all substitute parts maintain RoHS compliance?

A: Yes. The IRFZ14PBF and MTP3055VL both maintain ROHS3 compliance, matching the compliance status of the IRFZ10PBF. All three devices are suitable for applications requiring RoHS-compliant components.

Q: What is the impact of the MTP3055VL's lower gate threshold voltage on circuit design?

A: The MTP3055VL has a gate threshold voltage of 2V (maximum) compared to 4V for the IRFZ10PBF. This lower threshold voltage allows the device to turn on at lower gate drive voltages, potentially improving switching speed and reducing gate drive power requirements. However, gate drive circuits must be verified to ensure adequate voltage margin above the threshold voltage for reliable operation.

Q: Can the MTP3055VL's higher input capacitance affect switching performance?

A: The MTP3055VL has higher input capacitance (570pF versus 300pF), which increases the gate charge required for switching transitions. This may increase switching losses and require higher gate drive current capability. Gate drive circuit performance should be evaluated for applications with high switching frequencies or tight timing requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message