IRFZ10 N-Channel MOSFET 60V 10A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFZ10 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 10A continuous drain current in a Through Hole TO-220AB package. The device is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production builds and field replacements where the original IRFZ10 is no longer readily available through standard distribution channels.

Substiute Parts

IRFZ10
Vishay SiliconixIn Stock: 1770IRFZ10 Datasheet
IRFZ10
Current Part
IRFZ10PBF
Vishay SiliconixIn Stock: 15407IRFZ10PBF Datasheet
IRFZ10PBF
Parametric Equivalent
IRFZ14PBF
Vishay SiliconixIn Stock: 15522IRFZ14PBF Datasheet
IRFZ14PBF
Parametric Equivalent
MTP3055VL
onsemiIn Stock: 15395MTP3055VL Datasheet
MTP3055VL
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10 A (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25V
Power Dissipation (Max) 43 W (Tc)
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute parts for the IRFZ10 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical or equivalent electrical specifications across all critical parameters: Vdss (60V), Id (10A continuous drain current), Rds On (200mOhm @ 6A, 10V), Vgs(th) (4V @ 250µA), Gate Charge (11nC @ 10V), Vgs maximum (±20V), Input Capacitance (300pF @ 25V), Power Dissipation (43W), and Operating Temperature (-55°C to 175°C). These parts are pin-compatible in TO-220-3 package configuration and require no circuit modifications.

Manufacturer Recommended Substitute (MTP3055VL) exhibits enhanced electrical performance within the same voltage class (60V Vdss) and package type (TO-220-3). This part exceeds the minimum current rating (12A versus 10A) and provides improved thermal characteristics (48W versus 43W power dissipation). The MTP3055VL operates across an extended lower temperature range (-65°C versus -55°C minimum) and demonstrates superior on-resistance characteristics (180mOhm @ 6A, 5V). Pin compatibility and Through Hole mounting are maintained.

Parameter Comparison

Parameter IRFZ10 IRFZ10PBF IRFZ14PBF MTP3055VL Unit
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix onsemi
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 60 60 60 60 V
Current - Continuous Drain (Id) @ 25°C 10 10 10 12 A (Tc)
Rds On (Max) @ Id, Vgs 200 @ 6A, 10V 200 @ 6A, 10V 200 @ 6A, 10V 180 @ 6A, 5V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA 4 @ 250µA 2 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 11 @ 10V 11 @ 10V 11 @ 10V 10 @ 5V nC
Vgs (Max) ±20 ±20 ±20 ±15 V
Input Capacitance (Ciss) (Max) @ Vds 300 @ 25V 300 @ 25V 300 @ 25V 570 @ 25V pF
Power Dissipation (Max) 43 43 43 48 W (Tc)
Operating Temperature -55 to 175 -55 to 175 -55 to 175 -65 to 175 °C (TJ)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFZ10PBF is the direct parametric equivalent to the obsolete IRFZ10. This part maintains identical electrical specifications across all critical parameters while offering active product status and ROHS3 compliance. The IRFZ10PBF is suitable for direct replacement in existing designs without circuit modification. Packaging is specified as Tube with 15,365 pieces in stock inventory.

IRFZ14PBF provides parametric equivalence to the IRFZ10 with identical electrical performance across all measured parameters. This part is active product status with ROHS3 compliance and REACH Affected designation. The IRFZ14PBF is suitable for direct replacement in existing designs without circuit modification. Packaging is specified as Tube with 15,465 pieces in stock inventory.

MTP3055VL (onsemi) is the manufacturer-recommended substitute offering enhanced performance characteristics within the same voltage class and package configuration. This part provides increased continuous drain current (12A versus 10A), improved power dissipation capability (48W versus 43W), lower on-resistance (180mOhm @ 6A, 5V), and extended lower operating temperature range (-65°C versus -55°C). The MTP3055VL is active product status with ROHS3 compliance. This part is suitable for applications requiring enhanced thermal performance or lower gate drive voltage (5V versus 10V). Packaging is specified as Tube with 15,365 pieces in stock inventory.

Selection between IRFZ10PBF, IRFZ14PBF, and MTP3055VL depends on design requirements for gate drive voltage, thermal margin, and operating temperature range. All three parts are pin-compatible in TO-220-3 configuration and maintain Through Hole mounting compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRFZ10PBF be used as a direct replacement for the obsolete IRFZ10?

A: Yes. The IRFZ10PBF maintains identical electrical specifications including Vdss (60V), Id (10A), Rds On (200mOhm @ 6A, 10V), Vgs(th) (4V @ 250µA), Gate Charge (11nC @ 10V), and Operating Temperature (-55°C to 175°C). Pin configuration and TO-220-3 package are identical. No circuit modifications are required.

Q: What is the difference between IRFZ14PBF and IRFZ10PBF?

A: The IRFZ14PBF and IRFZ10PBF are parametrically equivalent. Both maintain identical electrical specifications across all critical parameters. The primary difference is the base product number designation (IRFZ14 versus IRFZ10). Both are suitable for direct replacement in the same application.

Q: When should MTP3055VL be selected over IRFZ10PBF or IRFZ14PBF?

A: The MTP3055VL should be selected when design requirements include: (1) gate drive voltage of 5V or lower (MTP3055VL requires 5V versus 10V for IRFZ10PBF/IRFZ14PBF), (2) continuous drain current exceeding 10A (MTP3055VL rated 12A), (3) thermal margin requirements exceeding 43W (MTP3055VL rated 48W), or (4) operating temperature range extending below -55°C (MTP3055VL rated to -65°C). The MTP3055VL exhibits higher input capacitance (570pF versus 300pF) and lower gate threshold voltage (2V versus 4V).

Q: Are all substitute parts pin-compatible with the original IRFZ10?

A: Yes. All substitute parts (IRFZ10PBF, IRFZ14PBF, and MTP3055VL) are configured in TO-220-3 package with identical pin configuration and Through Hole mounting. Direct PCB substitution is possible without layout modification.

Q: What is the RoHS compliance status of each part?

A: The original IRFZ10 is RoHS non-compliant. All substitute parts (IRFZ10PBF, IRFZ14PBF, and MTP3055VL) are ROHS3 compliant, meeting current environmental and regulatory requirements for new production builds.

Q: Does the MTP3055VL require different gate drive circuitry?

A: The MTP3055VL operates with a lower gate drive voltage (5V) compared to IRFZ10PBF and IRFZ14PBF (10V). Gate threshold voltage is lower (2V versus 4V). Existing gate drive circuits designed for 10V operation will function with the MTP3055VL, but optimization for 5V gate drive may improve switching performance and reduce power dissipation in the gate drive stage.

Q: What inventory availability exists for each substitute part?

A: IRFZ10PBF: 15,365 pieces in stock. IRFZ14PBF: 15,465 pieces in stock. MTP3055VL: 15,365 pieces in stock. All parts are available as new original components in Tube packaging.

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